Search Results - "Bradley, S.T"

Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement by Bradley, S.T., Young, A.P., Brillson, L.J., Murphy, M.J., Schaff, W.J., Eastman, L.E.

“…We have used low energy electron-excited nanoscale luminescence spectroscopy (LEEN) to detect the defects in each layer of AlGaN/GaN HEMT device structures and…”
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Inhibition of radiation-induced autophagy improves control of head and neck squamous cell carcinoma by Lee, Y.S., Skiba, J., SenthilKumar, G., Bradley, S.T., Nickel, K.P., Kimple, R.J.

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Mitophagy Induction by ROS-PINK1 Signaling Protects Head and Neck Cancer From Radiotherapy by Lee, Y.S., Bradley, S.T., Gurel, Z., Nickel, K.P., Kimple, R.J.

“…Approximate 25% of patients with local advanced head and neck cell carcinoma (HNSCC) treated with radiation still suffer from local relapse and are considered…”
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Low-energy electron-excited nanoluminescence studies of GaN and related materials by Brillson, L.J., Bradley, S.T., Goss, S.H., Sun, X., Murphy, M.J., Schaff, W.J., Eastman, L.F., Look, D.C., Molnar, R.J., Ponce, F.A., Ikeo, N., Sakai, Y.

“…We have used low-energy electron-excited nanoluminescence (LEEN) spectroscopy combined with ultrahigh vacuum surface analysis techniques to obtain electronic…”
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Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces by Brillson, L.J, Young, A.P, Jessen, G.H, Levin, T.M, Bradley, S.T, Goss, S.H, Bae, J, Ponce, F.A, Murphy, M.J, Schaff, W.J, Eastman, L.F

“…We have used low energy electron-excited nano-luminescence (LEEN) spectroscopy to obtain electronic band gap, confined state, and deep level trap information…”
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Production of random DNA oligomers for scalable DNA computing by Wang, Sixue S. L., Johnson, John J. X., Hughes, Bradley S. T., Karabay, Dundar A. O., Bader, Karson D. W., Austin, Alan, Habib, Aisha, Hatef, Husnia, Joshi, Megha, Nguyen, Lawrence, Mills Jr, Allen P.

“…While remarkably complex networks of connected DNA molecules can form from a relatively small number of distinct oligomer strands, a large computational space…”
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Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasm-induced molecular-beam-epitaxy by Jeonghyun, H., Schaff, W.J., Eastman, L.F., Bradley, S.T., Brillson, L.J., Look, D.C., Wu, J., Walukiewicz, W., Furis, M., Cartwright, A.N.

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Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces by Sun, X. L., Bradley, S. T., Jessen, G. H., Look, D. C., Molnar, R. J., Brillson, L. J.

“…We have used cross-sectional micro-Auger electron spectroscopy (AES), coupled with micro-cathodoluminescence (CLS) spectroscopy, in a UHV scanning electron…”
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Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy by Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S

“…Low energy electron-excited nano-luminescence (LEEN) spectroscopy has been used to correlate higher intensities of deep level emissions with higher ohmic…”
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Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts by Bradley, S.T., Brillson, L.J., Hwang, J., Schaff, W.J.

“…Schottky contacts to AlGaN are of great importance to its applications in micro- and optoelectronic devices. To characterize the dependence of interfacial…”
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