Search Results - "Bradley, Aaron J."

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor by Ugeda, Miguel M., Bradley, Aaron J., Shi, Su-Fei, da Jornada, Felipe H., Zhang, Yi, Qiu, Diana Y., Ruan, Wei, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Wang, Feng, Louie, Steven G., Crommie, Michael F.

“…Transition metal dichalcogenides are attracting widespread attention for their appealing optoelectronic properties. Using a combination of numerical and…”
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Characterization of collective ground states in single-layer NbSe2 by Ugeda, Miguel M., Bradley, Aaron J., Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T., Tsai, Hsin-Zon, Riss, Alexander, Mo, Sung-Kwan, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F.

“…Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density…”
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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films by Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J, Martín-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

“…High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of…”
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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures by Bradley, Aaron J, M. Ugeda, Miguel, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

“…Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers…”
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Imaging single-molecule reaction intermediates stabilized by surface dissipation and entropy by Riss, Alexander, Paz, Alejandro Pérez, Wickenburg, Sebastian, Tsai, Hsin-Zon, De Oteyza, Dimas G., Bradley, Aaron J., Ugeda, Miguel M., Gorman, Patrick, Jung, Han Sae, Crommie, Michael F., Rubio, Angel, Fischer, Felix R.

“…Chemical transformations at the interface between solid/liquid or solid/gaseous phases of matter lie at the heart of key industrial-scale manufacturing…”
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Local Electronic and Chemical Structure of Oligo-acetylene Derivatives Formed Through Radical Cyclizations at a Surface by Riss, Alexander, Wickenburg, Sebastian, Gorman, Patrick, Tan, Liang Z, Tsai, Hsin-Zon, de Oteyza, Dimas G, Chen, Yen-Chia, Bradley, Aaron J, Ugeda, Miguel M, Etkin, Grisha, Louie, Steven G, Fischer, Felix R, Crommie, Michael F

“…Semiconducting π-conjugated polymers have attracted significant interest for applications in light-emitting diodes, field-effect transistors, photovoltaics,…”
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Imaging and Tuning Molecular Levels at the Surface of a Gated Graphene Device by Riss, Alexander, Wickenburg, Sebastian, Tan, Liang Z, Tsai, Hsin-Zon, Kim, Youngkyou, Lu, Jiong, Bradley, Aaron J, Ugeda, Miguel M, Meaker, Kacey L, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, Fischer, Felix R, Louie, Steven G, Crommie, Michael F

“…Gate-controlled tuning of the charge carrier density in graphene devices provides new opportunities to control the behavior of molecular adsorbates. We have…”
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Covalent Functionalization of GaP(110) Surfaces via a Staudinger-Type Reaction with Perfluorophenyl Azide by M. Ugeda, Miguel, Bradley, Aaron J, Rodrigo, Lucía, Yu, Min, Liu, Wenjun, Doak, Peter, Riss, Alexander, Neaton, Jeffrey B, Tilley, T. Don, Pérez, Rubén, Crommie, Michael F

“…Despite the markedly low chemical reactivity of the nonpolar (110) surfaces of III–V semiconductors, the covalent functionalization of GaP(110) surfaces with…”
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Adsorption and Stability of π‑Bonded Ethylene on GaP(110) by Ugeda, Miguel M, Yu, Min, Bradley, Aaron J, Doak, Peter, Liu, Wenjun, Moore, Gary F, Sharp, Ian D, Tilley, T. D, Neaton, Jeffrey B, Crommie, Michael F

“…We have investigated the structural and electronic properties of individual ethylene molecules on the GaP(110) surface by combining low-temperature scanning…”
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities by Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S, Desai, Dhruv K, Rodgers, Griffin F, Bradley, Aaron J, Velasco, Jr, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F

“…Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of…”
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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe sub(2) Nanostructures by Bradley, Aaron J, Ugeda, Miguel M, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

“…Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers…”
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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures by Bradley, Aaron J., M. Ugeda, Miguel, da Jornada, Felipe H., Qiu, Diana Y., Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G., Crommie, Michael F.

“…Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers…”
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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe 2 Thin Films by Zhang, Yi, Ugeda, Miguel M., Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J., Martín-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F., Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe sub(2) Thin Films by Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J, Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

“…High quality WSe sub(2) films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination…”
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Characterization of collective ground states in single-layer NbSe sub(2) by Ugeda, Miguel M, Bradley, Aaron J, Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T, Tsai, Hsin-Zon, Riss, Alexander, Mo, Sung-Kwan, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F

“…Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density…”
Get full text

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities by Jung, Han Sae, Tsai, Hsin-Zon, Wong, Dillon, Germany, Chad, Kahn, Salman, Kim, Youngkyou, Aikawa, Andrew S., Desai, Dhruv K., Rodgers, Griffin F., Bradley, Aaron J., Velasco Jr, Jairo, Watanabe, Kenji, Taniguchi, Takashi, Wang, Feng, Zettl, Alex, Crommie, Michael F.

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Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films by Zhang, Yi, Ugeda, Miguel M, Jin, Chenhao, Shi, Su-Fei, Bradley, Aaron J, Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F, Hussain, Zahid, Shen, Zhi-Xun, Mo, Sung-Kwan

“…Nano Letters 2016 High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy…”
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Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures by Bradley, Aaron J, Ugeda, Miguel M, da Jornada, Felipe H, Qiu, Diana Y, Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G, Crommie, Michael F

“…Nano Letters 15, 2594 (2015) Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly…”
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Characterization of collective ground states in single-layer NbSe2 by Ugeda, Miguel M, Bradley, Aaron J, Zhang, Yi, Onishi, Seita, Chen, Yi, Ruan, Wei, Ojeda-Aristizabal, Claudia, Ryu, Hyejin, Edmonds, Mark T, Tsai, Hsin-Zon, Riss, Alexander, Mo, Sung-Kwan, Lee, Dunghai, Zettl, Alex, Hussain, Zahid, Shen, Zhi-Xun, Crommie, Michael F

“…Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge…”
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Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor by Ugeda, Miguel M, Bradley, Aaron J, Shi, Su-Fei, da Jornada, Felipe H, Zhang, Yi, Qiu, Diana Y, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Wang, Feng, Louie, Steven G, Crommie, Michael F

“…Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit novel electrical and optical properties and are emerging as a new platform for exploring…”
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