Search Results - "Bozler, C."

MEMS microswitches for reconfigurable microwave circuitry by Duffy, S., Bozler, C., Rabe, S., Knecht, J., Travis, L., Wyatt, P., Keast, C., Gouker, M.

“…The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted…”
Get full text

MEMS microswitch arrays for reconfigurable distributed microwave components by Bozler, C., Drangmeister, R., Duffy, S., Gouker, M., Knecht, J., Kushner, L., Parr, R., Rabe, S., Travis, L.

“…A novel MEMS switch design for use in microwave circuits is presented. The microswitch is capable of being configured in a multi-element X-Y array for use in…”
Get full text

Wide-band low-loss MEMS packaging technology by Muldavin, J., Bozler, C., Rabe, S., Keast, C.

“…This paper presents a wafer scale low-loss and broad-band RF MEMS packaging technology developed at MIT Lincoln Laboratory. The fabrication includes CMOS…”
Get full text

Power handling and linearity of MEM capacitive series switches by Muldavin, J., Boisvert, R., Bozler, C., Rabe, S., Keast, C.

“…This paper presents the power handling and linearity of a capacitive series MEMS switch. The switching time as a function of incident RF power is also…”
Get full text

Observation of electric field gradients near field-emission cathode arrays by Liang, Y., Bonnell, D. A., Goodhue, W. D., Rathman, D. D., Bozler, C. O.

“…The variation of electric field gradient above arrays of field emission cathodes has been investigated using atomic force microscopy. The spatial distribution…”
Get full text

A technique for producing epitaxial films on reuseable substrates by McClelland, R. W., Bozler, C. O., Fan, J. C. C.

“…Using a new technique, which we have named the CLEFT process (cleavage of lateral epitaxial films for transfer), we have grown single-crystal GaAs films by…”
Get full text

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth by Tsaur, B-Y, McClelland, R W, Fan, J C C, Gale, R P, Salerno, J P, Vojak, B A, Bozler, C O

“…Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on…”
Get full text

Wafer-Scale Packaged RF Microelectromechanical Switches by Muldavin, J., Bozler, C.O., Rabe, S., Wyatt, P.W., Keast, C.L.

“…This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw…”
Get full text

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition by Gale, R P, McClelland, R W, Fan, J C C, Bozler, C O

“…Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine,…”
Get full text

18.5-dB Gain at 18 GHz with a GaAs permeable base transistor by Bozler, C.O., Hollis, M.A., Nichols, K.B., Rabe, S., Vera, A., Chen, C.L.

“…Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This…”
Get full text

Electroabsorption in GaAs and its application to waveguide detectors and modulators by Stillman, G. E., Wolfe, C. M., Bozler, C. O., Rossi, J. A.

“…The electroabsorption coefficient of GaAs has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 μm. These measurements were made using…”
Get full text

Wafer-Scale Packaged RF-MEMS Switches by Muldavin, J., Bozler, C., Keast, C.

“…This paper presents results of fully packaged RF-MEMS switches including capacitive series, series-shunt, and SP4T switch nodes. The RF-MEMS capacitive…”
Get full text

Fabrication and numerical simulation of the permeable base transistor by Bozler, C.O., Alley, G.D.

“…A new transistor structure has been reported in which a thin tungsten grating has been embedded inside a single crystal of gallium arsenide. The embedded metal…”
Get full text

Fabrication of three-dimensional mode converters for silicon-based integrated optics by Fritze, M., Knecht, J., Bozler, C., Keast, C., Fijol, J., Jacobson, S., Keating, P., LeBlanc, J., Fike, E., Kessler, B., Frish, M., Manolatou, C.

“…One of the key challenges facing silicon-based integrated optics is the coupling of light from standard optical fibers to submicron silicon waveguides. As a…”
Get full text

Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide by Leonberger, F. J., Bozler, C. O., McClelland, R. W., Melngailis, I.

“…We report the successful demonstration of a new type of single-mode semiconductor waveguide, an oxide-confined optical waveguide, that has lower loss and…”
Get full text

SOI for MEMS and advanced packaging by Muldavin, J., Bozler, C., Yost, D., Chen, C., Wyatt, P.

“…Silicon on Insulator (SOI) Technologies offer many advantages for the fabrication and advanced packaging of MEMS and IC devices and systems. The buried oxide…”
Get full text

Small-signal gain performance of the permeable base transistor at EHF by Actis, R., Chick, R.W., Hollis, M.A., Clifton, B.J., Nichols, K.B., Bozler, C.O.

“…The small-signal amplifier performance at 40.5 GHz is reported for a GaAs permeable base transistor (PBT) having a base grating of 3200-Å periodicity and 1-mm…”
Get full text

Low-frequency noise in permeable base transistors by Zhu, X.C., Zhang, X.N., Van Der Ziel, A., Bozler, C.O.

“…The predominant noise is 1/f noise and consists of two parts: a) Noise varying as I\min{C}\max{2} , generated mostly with conducting channel and predominating…”
Get full text

GaAs p + n − n + directional-coupler switch by Leonberger, F. J., Donnelly, J. P., Bozler, C. O.

“…GaAs p+n−n+ electro-optic directional-coupler switches have been successfully fabricated and evaluated at 1.06 μm for use as components in integrated optical…”
Get full text

Fully Packaged 4-bit 100 ps RFMEMS Time Delay by Muldavin, J., Bozler, C., Rabe, S., Keast, C.

“…This paper presents results of a fully packaged RFMEMS 4-bit, 100-ps capacitive time delay. The time delays are packaged using wafer scale low-loss and…”
Get full text