Search Results - "Bouzrara, L."

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  1. 1
    Electron traps in metalorganic chemical vapor deposition grown Al0.2Ga0.8As

    Electron traps in metalorganic chemical vapor deposition grown Al0.2Ga0.8As by AJJEL, R, BOUZRARA, L, ZAÏDI, M. A, MAAREF, H, BREMOND, G

    Published in Physica. B, Condensed matter (01-03-2003)
    “…The effect of the growth temperature on deep electron traps present in n-type Al0.2Ga0.8As layers grown by metalorganic chemical vapor deposition was…”
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  2. 2
    Electric field effect on the electron emission from Te-DX in AlxGa1−xAs

    Electric field effect on the electron emission from Te-DX in AlxGa1−xAs by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

    Published in Materials Science and Engineering: C (01-03-2006)
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  3. 3
    Excitonic recombination processes in GaAs grown by close-space vapour transport

    Excitonic recombination processes in GaAs grown by close-space vapour transport by Bouzrara, L, Ajjel, R, Mejri, H, Zaidi, M.A, Alaya, S, Mimila-Arroyo, J, Maaref, H

    Published in Microelectronics (01-07-2004)
    “…Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been…”
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  4. 4
    Electron traps in metalorganic chemical vapor deposition grown Al 0.2Ga 0.8As

    Electron traps in metalorganic chemical vapor deposition grown Al 0.2Ga 0.8As by Ajjel, R, Bouzrara, L, Zaı̈di, M.A, Maaref, H, Brémond, G

    Published in Physica. B, Condensed matter (2003)
    “…The effect of the growth temperature on deep electron traps present in n-type Al 0.2Ga 0.8As layers grown by metalorganic chemical vapor deposition was…”
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  5. 5
    Excitonic recombination processes in GaAs grown by close-space vapour transport

    Excitonic recombination processes in GaAs grown by close-space vapour transport by BOUZRARA, L

    Published in Microelectronics (01-07-2004)
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  6. 6
    Electric field effect on the electron emission from Te-DX in Al x Ga 1− x As

    Electric field effect on the electron emission from Te-DX in Al x Ga 1− x As by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

    Published in Materials Science & Engineering C (2006)
    “…The present work is aimed to investigate the electron emission from DX centers in tellurium-doped Al x Ga 1− x As with aluminium composition x = 0.40 using…”
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  7. 7
    Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique

    Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

    Published in Microelectronics (01-07-2006)
    “…The paper reports on a deep level transient spectroscopy analysis of Te-related DX centers in AlxGa1−xAs with aluminum composition x=0.40. As was shown from…”
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  8. 8
    Alloy splitting of Te-DX in Al Ga1−As analysis using the deep level transient spectroscopy technique

    Alloy splitting of Te-DX in Al Ga1−As analysis using the deep level transient spectroscopy technique by Bouzrara, L., Ajjel, R., Mejri, H., Zaidi, M.A., Maaref, H.

    Published in Microelectronics (01-07-2006)
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