Search Results - "Bouysse, Philippe"

A new high speed and high efficiency GaN HEMT switching cell for envelope tracking modulators by Disserand, Anthony, Bouysse, Philippe, Martin, Audrey, Quere, Raymond, Jardel, Olivier, Lapierre, Luc

“…This paper presents a new high-speed and high-power switching circuit based on GaN HEMTs, well suited for envelope tracking supply modulators. The proposed…”
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Two-Stage GaN HEMT Amplifier With Gate-Source Voltage Shaping for Efficiency Versus Bandwidth Enhancements by Ramadan, Alaaeddine, Reveyrand, Tibault, Martin, Audrey, Nebus, Jean-Michel, Bouysse, Philippe, Lapierre, Luc, Villemazet, Jean-François, Forestier, Stéphane

“…In this paper a two-stage 2-GHz GaN HEMT amplifier with 15-W output power, 28-dB power gain, and 70% power-added efficiency (PAE) is presented. The power stage…”
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High speed and highly efficient S-band 20 W mixerless vector power modulator by Dasgupta, Abhijeet, Disserand, Anthony, Nebus, Jean-Michel, Martin, Audrey, Bouysse, Philippe, Medrel, Pierre, Quere, Raymond

“…This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power Modulator (VPM) based on the design of a…”
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Potentialités des séquences d’étalement chaotiques pour l’amélioration duTEEB d’un systèmeDS-CDMA asynchrone by Penaud, Stéphane, Bouysse, Philippe, Guittard, Jacques, Quéré, Raymond, Duverdier, Alban

“…RésuméL’utilisation de séquences chaotiques comme séquences d’étalement de spectre dans un système de communication à accès multiple à répartition par les…”
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Implementation of dual gate and drain dynamic voltage biasing to mitigate load modulation effects of supply modulators in envelope tracking power amplifiers by Medrel, Pierre, Delias, Arnaud, Augeau, Patrick, Martin, Audrey, Neveux, Guillaume, Bouysse, Philippe, Nebus, Jean-Michel

“…This paper presents a combination of dynamic gate and drain biasing techniques applied to a S-Band - 10 W GaN power amplifier. A GaN-based drain supply…”
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Joint optimization of the power-added efficiency and the error-vector measurement of 20-GHz pHEMT amplifier through a new dynamic bias-control method by Forestier, S., Bouysse, P., Quere, R., Mallet, A., Nebus, J.-M., Lapierre, L.

“…This paper presents a method for the optimization of the power-added efficiency (PAE), as well as the error-vector measurement (EVM) of a 20-GHz power…”
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High Current - High Speed Dynamic Bias Control System Applied to a 100W Wideband Push-Pull Amplifier by Bacqué, Ludovic, Bouysse, Philippe, Rebernak, W., Poumier, C., Lapierre, L., Nanfack Nkondem, Grégoire, Neveux, Guillaume, Barataud, Denis, Quéré, Raymond

“…This paper presents a dynamic bias control system applied to a high power wideband amplifier. The amplifier used is based on a push-pull topology with LDMOS…”
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An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance by Gatard, E., Sommet, R., Bouysse, P., Quere, R.

“…An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to…”
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High-Current-High-Speed Dynamic Bias Control System Applied to a 100-W Wideband Push-Pull Amplifier by Bacque, Ludovic, Bouysse, Philippe, Rebernak, William, Poumier, Christian, Lapierre, Luc, Nanfack-Nkondem, GrÉgoire, Neveux, Guillaume, Barataud, Denis, Quere, Raymond

“…This paper presents a dynamic bias control system applied to a high power wideband amplifier. The amplifier used is based on a push-pull topology with LDMOS…”
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40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization by Teyssier, J.-P., Bouysse, P., Ouarch, Z., Barataud, D., Peyretaillade, T., Quere, R.

“…A versatile pulsed I(V) and 40-GHz RF measurement system is described with all the know-how and methods to perform efficient, safe, and reliable nonlinear…”
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A measurement Set-up and methodology combining dynamic biasing and baseband predistorsion for high efficiency and linear amplifier design by Saad El Dine, M., Reveyrand, T., Neveux, G., Bouysse, P., Barataud, D., Nebus, J., Rebernak, W.

“…this paper presents a time domain envelope measurement system that enables the study and the optimization of high efficiency and linear power amplifiers by…”
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A new design approach of high efficiency S-band 25 W mixerless power modulator based on high voltage 50V GaN-HEMT technology by Dasgupta, Abhijeet, Delias, Arnaud, Medrel, Pierre, Bouysse, Philippe, Nebus, Jean-Michel

“…In this paper, a novel concept for efficient and wideband, S band - 25W power modulator designed by taking the advantages of high voltage (50V) GaN HEMT…”
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Measurements and control of current/ voltage waveforms of microwave transistors using an harmonic load-pull system for the optimum design of high efficiency power amplifiers by Barataud, Denis, Blache, Fabrice, Mallet, Alain, Bouysse, Philippe, Nebus, Jean-Michel, Villotte, Jean-Pierre, Obregon, Juan, Verspecht, J., Auxemery, P.

“…One of the most important requirements that RF and microwave power amplifiers designed for radiocommunication systems must meet is an optimum power added…”
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Time domain envelope characterization of power amplifiers for linear and high efficiency design solutions by Medrel, P., Reveyrand, T., Martin, A., Bouysse, Ph, Nebus, J.-M, Sombrin, J.

“…This paper focuses on the time domain envelope measurements based analysis of power amplifiers in order to improve both linearity and efficiency of microwave…”
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Potentialités des séquences d'étalement chaotiques pour l'amélioration du TEEB d'un système DS-CDMA asynchrone: Réseaux locaux : perspectives de l'accès radio by PENAUD, Stéphane, BOUYSSE, Philippe, GUITTARD, Jacques, QUERE, Raymond, DUVERDIER, Alban

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A novel, accurate load-pull setup allowing the characterization of highly mismatched power transistors by Bouysse, P., Nebus, J.-M., Coupat, J.-M., Villotte, J.-P.

“…The measurement of highly mismatched power transistors has always been a difficult problem. A novel, active load-pull technique providing an attractive…”
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Low frequency parasitic effects in RF transistors and their impact on power amplifier performances by Quere, R., Sommet, R., Bouysse, P., Reveyrand, T., Barataud, D., Teyssier, J. P., Nebus, J. M.

“…In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to…”
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Analysis of the Doherty technique and application to a 900MHz power amplifier by Dubuc, Nicolas, Duvanaud, Claude, Bouysse, Philippe

“…In this paper, we present the study, the realisation and the measurement of an amplifier at 900 MHz using the Doherty technique. This technique is based on the…”
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High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model by Gatard, E., Sommet, R., Bouysse, P., Quere, R., Stanislawiak, M., Bureau, J.-M.

“…This paper deals with the simulation and the design of an active dual stage high power S band limiter. The contribution of this work relies on an accurate…”
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Study and design of high efficiency switch mode GaN power amplifiers at L-band frequency by Ramadan, A., Martin, A., Sardin, D., Reveyrand, T., Nebus, J.-M., Bouysse, P., Lapierre, L., Villemazet, J.F., Forestier, S.

“…Activities have been carried out to determine the best electrical operating conditions of GaN HEMT that enable maximum power added efficiency at L-band for…”
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