Search Results - "Bourgoin, J. C."

Modelling of solar cell degradation in space by Makham, S., Sun, G.C., Bourgoin, J.C.

“…We present a method for modelling the degradation of solar cells in space, induced by electron or proton irradiations. It applies to modern cells, single,…”
Get full text

Relation between solar cell parameters and space degradation by Hadrami, M., Roubi, L., Zazoui, M., Bourgoin, J.C.

“…Proton and electron irradiations induce the degradation of space solar cells. The rate of the degradation depends on the current regime in the junction; it is…”
Get full text

Radiation-induced defects in solar cell materials by Bourgoin, J.C, de Angelis, N

“…We review the knowledge and understanding of proton and electron irradiation-induced defects in Si, GaAs and GaInP. We describe their nature, evaluate their…”
Get full text

Prediction of proton-induced degradation of GaAs space solar cells by Makham, S., Zazoui, M., Sun, G.C., Bourgoin, J.C.

“…The aim of this paper is to predict the degradation induced by proton and electron irradiations on the parameters (short-circuit current, open-circuit voltage…”
Get full text

Space degradation of multijunction solar cells: An electroluminescence study by Zazoui, M., Bourgoin, J. C.

“…We propose the use of electroluminescence to measure irradiation-induced degradation of multijunction photovoltaic cells in order to probe the degradation of…”
Get full text

Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells by de Angelis, N, Bourgoin, J.C, Takamoto, T, Khan, A, Yamaguchi, M

“…We monitor the short circuit current and the open circuit voltage of Si, GaAs and GaInP solar cells versus the fluence of 1 MeV electrons. From these data, we…”
Get full text

Modelization of epitaxial GaAs X-ray detectors by Mañez, N., Sun, G.C., Ben Chouikha, M., Algani, C., Alquié, G., Verdeil, C., Talbi, N., Khirouni, K., Bourgoin, J.C.

“…X-ray detectors are fabricated with non-intentionally doped thick epitaxial GaAs layers grown by a chemical technique. They are p +/i/n + structures in which…”
Get full text

A new GaAs material for X-ray imaging by Bourgoin, J.C.

“…It is now recognized that X-ray imaging, in particular for medical applications, could be achieved using GaAs detectors provided that it will be possible to…”
Get full text

A comparison between GaAs and CdTe for X-ray imaging by Sun, G.C., Samic, H., Bourgoin, J.C., Chambellan, D., Gal, O., Pillot, Ph

“…We have grown 4 inch GaAs epitaxial layers of thickness ranging from 100 to 600 /spl mu/m. With such layers we made pixel X-ray detectors where each pixel is a…”
Get full text

Metastability effects in InGaP solar cells by Sun, G.C, Bourgoin, J.C, de Angelis, N, Yamaguchi, M, Khan, A, Takamoto, T, Gilard, O

“…The electrical characteristics of InGaP n +/p/p +, solar cells are unstable under illumination below typically 200 K. We show that this effect is metastable…”
Get full text

X-ray detector with thick epitaxial GaAs grown by chemical reaction by Sun, G.C., Lenoir, M., Breelle, E., Samic, H., Bourgoin, J.C., El-Abbassi, H., Sellin, P.J., Montagne, J.P.

“…Thick (200 to 500 /spl mu/m) epitaxial GaAs layers have been grown on two inch wafers by using a chemical reaction technique which is inexpensive, is…”
Get full text

Performances of epitaxial GaAs p/i/n structures for X-ray imaging by Sun, G.C, Samic, H, Haguet, V, Pesant, J.C, Montagne, J.P, Lenoir, M, Bourgoin, J.C

“…We have realized 150 μm×150 μm pixels using ion implantation followed by photolithography, metallic contact evaporation and chemical etching on about 200 μm…”
Get full text

Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers by Hammadi, M, Bourgoin, J C, Samic, H

“…We study in detail the decomposition of GaAs by water, and show that the growth technique of epitaxial layers based on this reaction can lead to growth rates…”
Get full text

Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells by Khan, Aurangzeb, Yamaguchi, Masafumi, Takamoto, Tatsuya, de Angelis, N, Bourgoin, J.C

“…Native recombination centers, as well as those introduced by electron irradiation, in p-type GaInP layers have been characterized using combined lifetime…”
Get full text

Antisite incorporation during epitaxial growth of GaAs by Gandouzi, M., Bourgoin, J.C., El Mir, L., Stellmacher, M., Ortiz, V.

“…We have modelled the incorporation of As antisite defects in GaAs during epitaxial growth. The model assumes that the antisite is introduced as a result of the…”
Get full text

Impurity incorporation during epitaxial growth of GaAs by chemical reaction by Gandouzi, M, Bourgoin, J.C, Mimila-Arroyo, J, Grattepain, Cl, Grattepain, Ch

“…Vapour-phase epitaxy of GaAs in conditions where the growth is limited by the chemical reactions of the gases with the substrate and not by gas transport is…”
Get full text

Identification of EL2 in GaAs by VON BARDELEBEN, H. J, STIEVENARD, D, BOURGOIN, J. C, HUBER, A

“…Combining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC…”
Get full text

Defects in organometallic vapor-phase epitaxy-grown GaInP layers by FENG, S. L, BOURGOIN, J. C, OMNES, F, RAZEGHI, M

“…Nonintentionally doped metalorganic vapor-phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs,…”
Get full text

Physical origin of the DX center by BOURGOIN, J. C, MAUGER, A

Get full text

Electron Capture on EL2 in GaAs by Neffati, T., Bourgoin, J. C.

“…There have been few determinations of the capture cross‐section for electrons of the EL2 midgap level in GaAs. The reported values exhibit different…”
Get full text