Search Results - "Bour, D.P"

Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies by Schares, L., Kash, J.A., Doany, F.E., Schow, C.L., Schuster, C., Kuchta, D.M., Pepeljugoski, P.K., Trewhella, J.M., Baks, C.W., John, R.A., Shan, L., Kwark, Y.H., Budd, R.A., Chiniwalla, P., Libsch, F.R., Rosner, J., Tsang, C.K., Patel, C.S., Schaub, J.D., Dangel, R., Horst, F., Offrein, B.J., Kucharski, D., Guckenberger, D., Hegde, S., Nyikal, H., Chao-Kun Lin, Tandon, A., Trott, G.R., Nystrom, M., Bour, D.P., Tan, M.R.T., Dolfi, D.W.

“…In the "Terabus" optical interconnect program, optical data bus technologies are developed that will support terabit/second chip-to-chip data transfers over…”
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DFB Quantum Cascade Laser Arrays by Lee, B.G., Belkin, M.A., Pflugl, C., Diehl, L., Zhang, H.A., Audet, R.M., MacArthur, J., Bour, D.P., Corzine, S.W., Hofler, G.E., Capasso, F.

“…DFB quantum cascade laser (DFB-QCL) arrays operating between 8.7 and 9.4 mum are investigated for their performance characteristics-single-mode selection of…”
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High-Performance Quantum Cascade Lasers Grown by Metal-Organic Vapor Phase Epitaxy and Their Applications to Trace Gas Sensing by Troccoli, M., Diehl, L., Bour, D.P., Corzine, S.W., Yu, N., Wang, C.Y., Belkin, M.A., Hofler, G., Lewicki, R., Wysocki, G., Tittel, F.K., Capasso, F.

“…We present an overview of our results on the design, material growth, device characterization, and spectroscopic applications of MOVPE-grown quantum cascade…”
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Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects by Helman, N.C., Roth, J.E., Bour, D.P., Altug, H., Miller, D.A.B.

“…We present a surface-normal modulator architecture for optical interconnects that offers misalignment tolerance as well as high contrast ratio over a wide…”
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An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS by Roth, J.E., Palermo, S., Helman, N.C., Bour, D.P., Miller, D.A.B., Horowitz, M.

“…A low-voltage, 90-nm CMOS optical interconnect transceiver operating at 1550-nm optical wavelength is presented. This is the first demonstration of a novel…”
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40-gb/s EA modulators with wide temperature operation and negative chirp by Billia, L., Jintian Zhu, Ranganath, T., Bour, D.P., Corzine, S.W., Hofler, G.E.

“…Broad bandwidth external modulators are widely used in optical fiber networks to avoid the chirp associated with the direct modulation of laser diode sources…”
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High-power semiconductor red laser arrays for use in photodynamic therapy by Charamisinau, I., Happawana, G.S., Evans, G.A., Kirk, J.B., Bour, D.P., Rosen, A., Hsi, R.A.

“…Semiconductor laser ridge arrays emitting 250 mW at a wavelength of 635 nm are designed for photodynamic therapy applications. Although ridge laser arrays are…”
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Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers by Tansu, N., Ying-Lan Chang, Takeuchi, T., Bour, D.P., Corzine, S.W., Tan, M.R.T., Mawst, L.J.

“…Characteristic temperature coefficients of the threshold current (T/sub 0/) and the external differential quantum efficiency (T/sub 1/) are studied as simple…”
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Testing High-Frequency Electronic Signals With Reflection-Mode Electroabsorption Modulators by Van Tuyl, R.L., Hofler, G.E., Ritter, R.G., Marshall, T.S., Jintian Zhu, Billia, L., Clifford, G.M., William Gong, Bour, D.P.

“…Remote testing of microwave signals to 25 GHz and digital signals to 12.5 Gb/s is demonstrated through fiber-optic cables. Reflection-mode electroabsorption…”
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Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching by Kneissl, M., Hofstetter, D., Bour, D.P., Donaldson, R., Walker, J., Johnson, N.M.

“…Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements…”
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Design and performance of asymmetric waveguide nitride laser diodes by Bour, D.P., Kneissl, M., Van de Walle, C.G., Evans, G.A., Romano, L.T., Northrup, J., Teepe, M., Wood, R., Schmidt, T., Schoffberger, S., Johnson, N.M.

“…We describe the design and performance characteristics of an asymmetric waveguide nitride laser diode structure, in which the p-cladding layer is placed…”
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Phase separation in annealed InGaN/GaN multiple quantum wells by Romano, L.T, McCluskey, M.D, Krusor, B.S, Bour, D.P, Chua, C, Brennan, S, Yu, K.M

“…In-rich second phases were detected by transmission electron microscopy (TEM) in In0.27Ga0.73N multiple quantum well (MQW) samples that were annealed at 950°C…”
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Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers by Bour, D.P., Gilbert, D.B., Fabian, K.B., Bednarz, J.P., Ettenberg, M.

“…A 10000 h, 30 degrees C constant-current lifetest performed on five strained In/sub 0.2/Ga/sub 0.8/As/AlGaAs single-quantum-well lasers, with lambda…”
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High-power CW operation of AlGaInP laser-diode array at 640 nm by Skidmore, J.A., Emanuel, M.A., Beach, R.J., Benett, W.J., Freitas, B.L., Carlson, N.W., Solarz, R.W., Bour, D.P., Treat, D.W.

“…Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate…”
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Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes by Bour, D.P., Geels, R.S., Treat, D.W., Paoli, T.L., Ponce, F., Thornton, R.L., Krusor, B.S., Bringans, R.D., Welch, D.F.

“…The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser…”
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Phase separation in InGaN/GaN multiple quantum wells by McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S.

“…Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption…”
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Metastability of Oxygen Donors in AlGaN by McCluskey, M. D., Johnson, N. M., Van de Walle, C. G., Bour, D. P., Kneissl, M., Walukiewicz, W.

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Local vibrational modes of the Mg–H acceptor complex in GaN by Götz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., Haller, E. E.

“…Local vibrational modes (LVMs) are reported for Mg-doped GaN grown by metalorganic chemical vapor deposition. Hetero-epitaxial layers of GaN:Mg, either…”
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High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs by Chao-Kun Lin, Bour, D.P., Jintian Zhu, Perez, W.H., Leary, M.H., Tandon, A., Corzine, S.W., Tan, M.R.T.

“…We demonstrate novel electrically pumped 1.3- and 1.55- mu m vertical cavity surface emitting lasers (VCSELs) with two InP/air-gap distributed Bragg reflectors…”
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High temperature continuous-wave operation of 1.3- and 1.55-/spl mu/m VCSELs with InP/air-gap DBRs by Chao-Kun Lin, Bour, D.P., Jintian Zhu, Perez, W.H., Leary, M.H., Tandon, A., Corzine, S.W., Tan, M.R.T.

“…We demonstrate novel electrically pumped 1.3- and 1.55-/spl mu/m vertical cavity surface emitting lasers (VCSELs) with two InP/air-gap distributed Bragg…”
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