Search Results - "Bougrioua, Zahia"

Dispersion of Heat Flux Sensors Manufactured in Silicon Technology by Ziouche, Katir, Lejeune, Pascale, Bougrioua, Zahia, Leclercq, Didier

“…In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide…”
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Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M-Plane Sapphire by Metalorganic Vapor Phase Epitaxy by Vennéguès, Philippe, Bougrioua, Zahia, Guehne, Tobias

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In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m - and r -plane Sapphire Substrates by Vennegues, Philippe, Zhu, Tiankai, Bougrioua, Zahia, Martin, Denis, Zuniga-Perez, Jesus, Grandjean, Nicolas

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Metal-based folded-thermopile for 2.5D micro-thermoelectric generators by Bel-Hadj, Ibrahim, Bougrioua, Zahia, Ziouche, Katir

“…We report on the simulation and fabrication of 2.5D micro-thermoelectric generators (µTEGs) with a thermopile topology periodically folded and distributed on a…”
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Thermoelectric properties of nanostructured porous-polysilicon thin films by Ziouche, Katir, Bel-Hadj, Ibrahim, Bougrioua, Zahia

“…In this paper, we address the optimization of the electrical and thermoelectrical properties of nanostructured polysilicon material for integration in…”
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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films by Benzarti, Z., Khalfallah, A., Bougrioua, Z., Evaristo, M., Cavaleiro, A.

“…This study investigates the impact of Mg doping concentration in GaN thin films on their physical and mechanical properties, specifically on their conductivity…”
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Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology by Ziouche, Katir, Yuan, Zheng, Lejeune, Pascale, Lasri, Tuami, Leclercq, Didier, Bougrioua, Zahia

“…A technology of planar micro thermoelectric generators (μTEGs) with double thermal deflections is presented in this letter. We focus on the development of an…”
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A planar micro thermoelectric generator with high thermal resistance by Yuan, Zheng, Ziouche, Katir, Bougrioua, Zahia, Lejeune, Pascale, Lasri, Tuami, Leclercq, Didier

“…•Planar thermoelectric microgenerators were designed with respect to CMOS technology.•A new efficiency-factor involving heat flux and thermal resistance is…”
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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers by Benzarti, Z., Sekrafi, T., Khalfallah, A., Bougrioua, Z., Vignaud, D., Evaristo, M., Cavaleiro, A.

“…•N-polar InN epilayers grown by PA-MBE on GaN/AlN/Al2O3(0001).•Growth temperature effect on physical and mechanical features was analysed.•Optimal growth…”
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Simultaneous Fabrication of Superhydrophobic and Superhydrophilic Polyimide Surfaces with Low Hysteresis by Scheen, Gilles, Ziouche, Katir, Bougrioua, Zahia, Godts, Pascale, Leclercq, Didier, Lasri, Tuami

“…Polyimide is of great interest in the field of MEMS and microtechnology. It is often used for its chemical, thermal, mechanical, and optical properties. In…”
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Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy by Vennéguès, P., Bougrioua, Z.

“…The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting…”
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Unpackaged infrared thermoelectric microsensor realised on suspended membrane by silicon technology by Sion, Charles, Godts, Pascale, Ziouche, Katir, Bougrioua, Zahia, Lasri, Tuami, Leclercq, Didier

“…In this article, infrared thermoelectric microsensors manufactured by CMOS technology with an original design are presented. Packaging is not required because…”
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Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique by Gokarna, Anisha, Kim, Je-Hyung, Leroy, Floriane, Patriarche, Gilles, Roussel, Pascal, Bougrioua, Zahia, Rodriguez, Christophe, Dogheche, Elhadj, Cho, Yong-Hoon

“…To investigate the effect of a seed layer on the growth and properties of ZnO nanorods using hydrothermal technique, various thickness of sputter deposited ZnO…”
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Quasi-monolithic heat flux microsensor based on porous silicon boxes by Ziouche, Katir, Godts, Pascale, Bougrioua, Zahia, Sion, Charles, Lasri, Tuami, Leclercq, Didier

“…A new generation of heat flux microsensors manufactured in CMOS silicon technology with high sensitivities is presented. Incident heat flux is converted into…”
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2DEG Mobility in AlGaN-GaN Structures Grown by LP-MOVPE by Bougrioua, Z., Farvacque, J.-L., Moerman, I., Carosella, F.

“…Two‐dimensional electron gas (2DEGs) could be tailored through the growth by LP‐MOVPE of intentionally undoped AlGaN–GaN heterostructures with 6% < xAl < 36%…”
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AlGaN/GaN HEMTS: material, processing, and characterization by CALLE, F, PALACIOS, T, MONROY, E, GRAJAL, J, VERDU, M, BOUGRIOUA, Z, MOERMAN, I

“…The growth of AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by metal organic vapor phase epitaxy (MOVPE) is described, with special…”
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Chemical mapping of InGaN MQWs by Sharma, Nikhil, Tricker, David, Thomas, Paul, Bougrioua, Zahia, Jacobs, Koen, Cheyns, Jan, Moerman, Ingrid, Thrush, Ted, Considine, Laurence, Boyd, Adam, Humphreys, Colin

“…High power LEDs fabricated from InGaN/GaN layers have received much research interest. Hence, in this paper we identify structural and chemical defects…”
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Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation by Abou-Khalil, Michel, Matsui, Toshiaki, Bougrioua, Zahia, Maciejko, Roman, Wu, Ke, Wu, K., Maciejko, R., Bougrioua, Z.

“…We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in…”
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Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE by Bougrioua, Z., Farvacque, J.-L., Moerman, I., Demeester, P., Harris, J.J., Lee, K., van Tendeloo, G., Lebedev, O., Thrush, E.J.

“…The room temperature carrier mobility in bulk GaN layers is found to improve drastically by up to a factor of 20 once the incorporated silicon is higher than a…”
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