Search Results - "Boufnichel, Mohamed"
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Comparison between Bosch and STiGer Processes for Deep Silicon Etching
Published in Micromachines (Basel) (01-10-2021)“…The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer,…”
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2
Sustainable Approach for the Development of TiO2-Based 3D Electrodes for Microsupercapacitors
Published in Batteries (Basel) (29-04-2023)“…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO2 nanoparticles via a…”
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3
Atomic layer etching of gallium nitride using fluorine-based chemistry
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2023)“…Atomic layer etching (ALE) of GaN on silicon substrates has been investigated using fluorine-based chemistry. The ALE process used for this study consists of a…”
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4
Morphology control in thin films of PS:PLA homopolymer blends by dip-coating deposition
Published in Applied surface science (30-01-2017)“…[Display omitted] •A process to control the morphology of polymer blends thin film is described.•It is based on the use of dip-coating at various withdrawal…”
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5
Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2014)“…A global model has been developed for low-pressure, inductively coupled plasma (ICP) SF6/O2/Ar mixtures. This model is based on a set of mass balance equations…”
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Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2017)“…This study is dedicated to the development of a multiscale approach for the simulation of silicon etching using the Bosch process. The etching simulator is…”
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7
Sustainable Approach for the Development of TiO2-Based 3D Electrodes for Microsupercapacitors
Published in Batteries (Basel) (29-04-2023)“…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO2 nanoparticles via a…”
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8
Sustainable Approach for the Development of TiO[sub.2]-Based 3D Electrodes for Microsupercapacitors
Published in Batteries (Basel) (01-04-2023)“…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO[sub.2] nanoparticles…”
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Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2016)“…An etching simulator is developed to study the two-dimensional (2D) silicon etch profile evolution under SF6/O2 inductively coupled plasma discharge. The…”
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10
Multiscale approach for simulation of silicon etching using SF 6 /C 4 F 8 Bosch process
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2017)Get full text
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Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2018)“…The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the…”
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12
Simulation of cryogenic silicon etching under SF 6 /O 2 /Ar plasma discharge
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2016)Get full text
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Modeling of inductively coupled plasma SF{sub 6}/O{sub 2}/Ar plasma discharge: Effect of O{sub 2} on the plasma kinetic properties
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (15-03-2014)“…A global model has been developed for low-pressure, inductively coupled plasma (ICP) SF{sub 6}/O{sub 2}/Ar mixtures. This model is based on a set of mass…”
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14
Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining
Published in Polymer (Guilford) (12-10-2015)“…Poly(styrene) thin films, typically 80 nm thick, were stained using ruthenium tetroxide vapors and studied using AFM, XPS, ToF-SIMS, ellipsometry and tested as…”
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15
Deep GaN etching by inductively coupled plasma and induced surface defects
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-09-2010)“…GaN etching was studied in Cl 2 / Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir…”
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Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches
Published in Vacuum (01-11-2016)“…A first study was carried out to define the appropriate parameters to create a passivation layer by SiF4/O2 plasma that resists lateral chemical etching by SF6…”
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High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films
Published in Micro and Nano Engineering (01-11-2018)“…Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from…”
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Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process
Published in Microelectronic engineering (01-04-2005)“…The aim of this work is to demonstrate the ability of our system to etch deep high aspect ratio trenches (HART’s) with a high etch rate (>5 μm/min), high…”
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The passivation layer formation in the cryo-etching plasma process
Published in Microelectronic engineering (01-05-2007)“…The growth and destruction of the SiO x F y passivation layer is investigated in the so-called cryogenic process used for silicon etching. We show that etching…”
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Journal Article Conference Proceeding -
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Oxidation threshold in silicon etching at cryogenic temperatures
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2006)“…In silicon etching in S F 6 ∕ O 2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A Si O x F y passivation layer is formed…”
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