Search Results - "Boufnichel, Mohamed"

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  1. 1

    Comparison between Bosch and STiGer Processes for Deep Silicon Etching by Tillocher, Thomas, Nos, Jack, Antoun, Gaëlle, Lefaucheux, Philippe, Boufnichel, Mohamed, Dussart, Rémi

    Published in Micromachines (Basel) (01-10-2021)
    “…The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer,…”
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    Journal Article
  2. 2

    Sustainable Approach for the Development of TiO2-Based 3D Electrodes for Microsupercapacitors by Poirot, Nathalie, Gabard, Marie, Boufnichel, Mohamed, Omnée, Rachelle, Raymundo-Piñero, Encarnacion

    Published in Batteries (Basel) (29-04-2023)
    “…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO2 nanoparticles via a…”
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    Journal Article
  3. 3

    Atomic layer etching of gallium nitride using fluorine-based chemistry by Hamraoui, Lamiae, Zhang, Tinghui, Crespi, Angela, Lefaucheux, Philippe, Tillocher, Thomas, Boufnichel, Mohamed, Dussart, Rémi

    “…Atomic layer etching (ALE) of GaN on silicon substrates has been investigated using fluorine-based chemistry. The ALE process used for this study consists of a…”
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    Journal Article
  4. 4

    Morphology control in thin films of PS:PLA homopolymer blends by dip-coating deposition by Vital, Alexane, Vayer, Marylène, Tillocher, Thomas, Dussart, Rémi, Boufnichel, Mohamed, Sinturel, Christophe

    Published in Applied surface science (30-01-2017)
    “…[Display omitted] •A process to control the morphology of polymer blends thin film is described.•It is based on the use of dip-coating at various withdrawal…”
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    Journal Article
  5. 5

    Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties by Pateau, Amand, Rhallabi, Ahmed, Fernandez, Marie-Claude, Boufnichel, Mohamed, Roqueta, Fabrice

    “…A global model has been developed for low-pressure, inductively coupled plasma (ICP) SF6/O2/Ar mixtures. This model is based on a set of mass balance equations…”
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    Journal Article
  6. 6

    Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process by Le Dain, Guillaume, Rhallabi, Ahmed, Fernandez, Marie Claude, Boufnichel, Mohamed, Roqueta, Fabrice

    “…This study is dedicated to the development of a multiscale approach for the simulation of silicon etching using the Bosch process. The etching simulator is…”
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    Journal Article
  7. 7

    Sustainable Approach for the Development of TiO2-Based 3D Electrodes for Microsupercapacitors by Poirot, Nathalie, Gabard, Marie, Boufnichel, Mohamed, Omnée, Rachelle, Raymundo-Piñero, Encarnación

    Published in Batteries (Basel) (29-04-2023)
    “…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO2 nanoparticles via a…”
    Get full text
    Journal Article
  8. 8

    Sustainable Approach for the Development of TiO[sub.2]-Based 3D Electrodes for Microsupercapacitors by Poirot, Nathalie, Gabard, Marie, Boufnichel, Mohamed, Omnée, Rachelle, Raymundo-Piñero, Encarnacion

    Published in Batteries (Basel) (01-04-2023)
    “…This study reports a sustainable approach for developing electrodes for microsupercapacitors. This approach includes the synthesis of TiO[sub.2] nanoparticles…”
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    Journal Article
  9. 9

    Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge by Haidar, Yehya, Rhallabi, Ahmed, Pateau, Amand, Mokrani, Arezki, Taher, Fadia, Roqueta, Fabrice, Boufnichel, Mohamed

    “…An etching simulator is developed to study the two-dimensional (2D) silicon etch profile evolution under SF6/O2 inductively coupled plasma discharge. The…”
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    Journal Article
  10. 10
  11. 11

    Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties by Le Dain, Guillaume, Rhallabi, Ahmed, Cardinaud, Christophe, Girard, Aurélie, Fernandez, Marie-Claude, Boufnichel, Mohamed, Roqueta, Fabrice

    “…The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the…”
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    Journal Article
  12. 12
  13. 13

    Modeling of inductively coupled plasma SF{sub 6}/O{sub 2}/Ar plasma discharge: Effect of O{sub 2} on the plasma kinetic properties by Pateau, Amand, Rhallabi, Ahmed, Fernandez, Marie-Claude, Boufnichel, Mohamed, Roqueta, Fabrice

    “…A global model has been developed for low-pressure, inductively coupled plasma (ICP) SF{sub 6}/O{sub 2}/Ar mixtures. This model is based on a set of mass…”
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    Journal Article
  14. 14

    Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining by Vital, A., Vayer, M., Sinturel, C., Tillocher, T., Lefaucheux, P., Dussart, R., Boufnichel, M.

    Published in Polymer (Guilford) (12-10-2015)
    “…Poly(styrene) thin films, typically 80 nm thick, were stained using ruthenium tetroxide vapors and studied using AFM, XPS, ToF-SIMS, ellipsometry and tested as…”
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    Journal Article
  15. 15

    Deep GaN etching by inductively coupled plasma and induced surface defects by Ladroue, J., Meritan, A., Boufnichel, M., Lefaucheux, P., Ranson, P., Dussart, R.

    “…GaN etching was studied in Cl 2 / Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir…”
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    Journal Article
  16. 16

    Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches by Kafrouni, W., Tillocher, T., Ladroue, J., Lefaucheux, P., Boufnichel, M., Ranson, P., Dussart, R.

    Published in Vacuum (01-11-2016)
    “…A first study was carried out to define the appropriate parameters to create a passivation layer by SiF4/O2 plasma that resists lateral chemical etching by SF6…”
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  17. 17

    High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films by Kulsreshath, M., Vital, A., Lefaucheux, P., Sinturel, C., Tillocher, T., Vayer, M., Boufnichel, M., Dussart, R.

    Published in Micro and Nano Engineering (01-11-2018)
    “…Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from…”
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    Journal Article
  18. 18

    Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process by Boufnichel, M., Lefaucheux, P., Aachboun, S., Dussart, R., Ranson, P.

    Published in Microelectronic engineering (01-04-2005)
    “…The aim of this work is to demonstrate the ability of our system to etch deep high aspect ratio trenches (HART’s) with a high etch rate (>5 μm/min), high…”
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    Journal Article
  19. 19

    The passivation layer formation in the cryo-etching plasma process by Dussart, R., Mellhaoui, X., Tillocher, T., Lefaucheux, P., Boufnichel, M., Ranson, P.

    Published in Microelectronic engineering (01-05-2007)
    “…The growth and destruction of the SiO x F y passivation layer is investigated in the so-called cryogenic process used for silicon etching. We show that etching…”
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    Journal Article Conference Proceeding
  20. 20

    Oxidation threshold in silicon etching at cryogenic temperatures by Tillocher, T., Dussart, R., Mellhaoui, X., Lefaucheux, P., Maaza, N. Mekkakia, Ranson, P., Boufnichel, M., Overzet, L. J.

    “…In silicon etching in S F 6 ∕ O 2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A Si O x F y passivation layer is formed…”
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    Journal Article