Search Results - "Boubaaya, Mohamed"

Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique by Abdelmadjid Benabdelmoumene, Djezzar, Boualem, Messaoud, Dhiaelhak, Boubaaya, Mohamed, Chenouf, Amel, Zatout, Boumediene

“…Negative Bias Temperature Instability (NBTI) on p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFET) has been experienced with developed fast…”
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Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors by Messaoud, Dhia Elhak, Djezzar, Boualem, Boubaaya, Mohamed, Chenouf, Amel, Benabdelmoumene, Abdelmadjid, Zatout, Boumediene, Zitouni, Abdelkader

“…This work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around– ,…”
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Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion by Messaoud, Dhia Elhak, Djezzar, Boualem, Boubaaya, Mohamed, Benabdelmoumene, Abdelmadjid, Zatout, Boumediene, Chenouf, Amel, Zitouni, Abdelkader

“…In this paper, we implement the pulsed current–voltage (PIV) technique for the metal-oxide-semiconductor field-effect transistor (MOSFET) device’s ultrafast…”
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Recovery investigation of NBTI-induced traps in n-MOSFET devices by Djezzar, Boualem, Benabdelmoumene, Abdelmadjid, Zatout, Boumediene, Messaoud, Dhiaelhak, Chenouf, Amel, Tahi, Hakim, Boubaaya, Mohamed, Timlelt, Hakima

“…Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs),…”
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Artificial intelligence approach to analyze SIMS profiles of 11 B, 31 P and 75 As in n- and p-type silicon substrates: experimental investigation by Filali, Walid, Boubaaya, Mohamed, Garoudja, Elyes, Lekoui, Fouaz, Abdellaoui, Ibrahime, Amrani, Rachid, Oussalah, Slimane, Sengouga, Nouredine

“…Abstract In this work, we report an effective approach based on an artificial intelligence technique to investigate the secondary ions mass spectroscopy (SIMS)…”
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NBTI stress on power VDMOS transistors under low magnetic field by Tahanout, Cherifa, Tahi, Hakim, Boubaaya, Mohamed, Djezzar, Boualem, Marah, Mohamed, Nadji, Becharia, Saoula, Nadia

“…In this paper, we investigated the magnetic field impact on negative bias temperature instability (NBTI) of commercial power double diffused MOS transistor…”
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Investigation of NBTI degradation on power VDMOS transistors under magnetic field by Tahi, Hakim, Benmessai, Karim, Le Floch, Jean Michel, Boubaaya, Mohamed, Tahanout, Cherifa, Djezzar, Boualem, Benabdelmomene, Abdelmadjid, Goudjil, Mohamed, Chenouf, Amel

“…In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability…”
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Using the charge pumping geometric component to extract NBTI induced mobility degradation by Boubaaya, Mohamed, Tahi, Hakim, Tahanout, Cherifa, Djezzar, Boualem, Benabdelmomene, Abdelmadjid, Chenouf, Amel, Doumaz, Djamila, Feraht Hemida, Abdelhak

“…Instead, the classical consideration that the geometric component in charge pumping method (CP) is parasitic component, in this work we demonstrate that this…”
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Fabrication and characterization of Ti/TiN- based resistance temperature detector by Filali, Walid, Haridi, Hadjira, Garoudja, Elyes, Boubaaya, Mohamed, El Hadi Khediri, Abdelkrim, Mekheldi, Mohamed, Henni, Laid, Lekoui, Fouaz, Hamza, Rouabeh, Amrani, Rachid, Oussalah, Slimane

“…In this work, a micro-patterned thin film resistor as temperature sensor has been developed. Based on the CMOS 1μ technology flow process, the resistance…”
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Multi-frequencies low field spin dependent charge pumping technique for defect atomic scale identification by Tahi, Hakim, Tahanout, Cherifa, Boubaaya, Mohamed

“…In this paper, we present a new spectroscopic technique based on electrically detected magnetic resonance (EDMR), called multi-frequencies spin dependent…”
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Simulation of ion implantation for CMOS 1µm using SILVACO tools by Boubaaya, Mohamed, Larbi, Fayçal Hadj, Oussalah, Slimane

“…One micron gate-length LDD-CMOS (Lightly Doped Drain - Complementary Metal Oxide Semiconductor) technology uses N and P-MOSFETs, realized on the same…”
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Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction by Tahi, Hakim, Djezzar, Boualem, Benmassai, Karim, Boubaaya, Mohamed, Benabdelmoumene, Abdelmadjid, Chenouf, Amel, Goudjil, Mohamed

“…The identification of the microstructure defects responsible of metal-oxide-silicon field effect transistor (MOSFET) reliability problems is important to…”
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Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species by Boubaaya, Mohamed, Tahi, Hakim, Djezzar, Boualem, Benmassai, Karim, Benabdelmoumene, Abdelmadjid, Goudjil, Mohamed, Doumaz, Djamila, Hemida, Abdelhak Feraht

“…Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all…”
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Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices by Messaoud, DhiaElhak, Djezzar, Boualem, Boubaaya, Mohamed, Benabdelmoumene, Abdelmadjid, Zatout, Boumediene, Chenouf, Amel, Zitouni, Abdelkader

“…This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for…”
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Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field by Tahi, Hakim, Tahanout, Cherifa, Boubaaya, Mohamed, Djezzar, Boualem, Merah, Sidi Mohammed, Nadji, Bacharia, Saoula, Nadia

“…In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability…”
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Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices by Tahi, Hakim, Tahanout, Cherifa, Djezzar, Boualem, Boubaaya, Mohamed, Benabdelmoumene, Abdelmadjid, Chenouf, Amel

“…In this paper, we model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have established an analytic equation for…”
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Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability by Boubaaya, Mohamed, O'Sullivan, B. J., Djezzar, Boualem, Franco, J., Litta, E. D., Ritzenthaler, R., Dupuy, E., Machkaoutsan, Vladimir, Fazan, Pierre, Kim, C., Bennaceur-Doumaz, D., Hamida, A. Ferhat, Spessot, A., Linten, D., Horiguchi, N.

“…Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high-<inline-formula> <tex-math…”
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