Search Results - "Bottegoni, F."

Hole and electron spin lifetime in lightly n-doped silicon at low temperatures by Zucchetti, C., Scali, F., Ballabio, A., Bollani, M., Isella, G., Ferrari, G., Finazzi, M., Ciccacci, F., Bottegoni, F.

“…We report on photoinduced inverse spin-Hall effect (ISHE) measurements as a function of the incident photon energy in the 4–50 K temperature range for a…”
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Optical spin injection and spin lifetime in Ge heterostructures by Pezzoli, F, Bottegoni, F, Trivedi, D, Ciccacci, F, Giorgioni, A, Li, P, Cecchi, S, Grilli, E, Song, Y, Guzzi, M, Dery, H, Isella, G

“…We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin…”
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Inverse spin-Hall effect in GeSn by Marchionni, A., Zucchetti, C., Ciccacci, F., Finazzi, M., Funk, H. S., Schwarz, D., Oehme, M., Schulze, J., Bottegoni, F.

“…Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising candidate for the integration of spintronics, photonics, and…”
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Optical generation of pure spin currents at the indirect gap of bulk Si by Bottegoni, F., Zucchetti, C., Ciccacci, F., Finazzi, M., Isella, G.

“…We report on the optical generation of a pure spin current at the indirect gap of bulk Si at room temperature in the photon energy range comprised between 1.2…”
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Non-local electrical spin injection and detection in germanium at room temperature by Rortais, F., Vergnaud, C., Marty, A., Vila, L., Attané, J.-P., Widiez, J., Zucchetti, C., Bottegoni, F., Jaffrès, H., George, J.-M., Jamet, M.

“…Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in…”
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Spin-Hall Voltage over a Large Length Scale in Bulk Germanium by Bottegoni, F, Zucchetti, C, Dal Conte, S, Frigerio, J, Carpene, E, Vergnaud, C, Jamet, M, Isella, G, Ciccacci, F, Cerullo, G, Finazzi, M

“…We exploit the spin-Hall effect to generate a uniform pure spin current in an epitaxial n-doped Ge channel, and we detect the electrically induced spin…”
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Imaging spin diffusion in germanium at room temperature by Zucchetti, C., Bottegoni, F., Vergnaud, C., Ciccacci, F., Isella, G., Ghirardini, L., Celebrano, M., Rortais, F., Ferrari, Anthony, Marty, Alain, Finazzi, M., Jamet, M.

“…We report on the nonlocal detection of optically oriented spins in lightly n-doped germanium at room temperature. Localized spin generation is achieved by…”
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Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films by Zucchetti, C., Dau, M.-T., Bottegoni, F., Vergnaud, C., Guillet, T., Marty, Alain, Beigne, C., Gambarelli, S., Picone, A., Calloni, A., Bussetti, G., Brambilla, A., Duò, L., Ciccacci, F., Das, P., Fujii, J., Vobornik, I., Finazzi, M., Jamet, M.

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Electric field modulation of spin transport by Zucchetti, C., Marchionni, A., Bollani, M., Ciccacci, F., Finazzi, M., Bottegoni, F.

“…The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic…”
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Doping dependence of the electron spin diffusion length in germanium by Zucchetti, C., Bollani, M., Isella, G., Zani, M., Finazzi, M., Bottegoni, F.

“…We have investigated the electron spin diffusion length at room temperature in bulk n-doped germanium as a function of the doping concentration. To this…”
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Non-local architecture for spin current manipulation in silicon platforms by Zucchetti, C., Scali, F., Grassi, P., Bollani, M., Anzi, L., Isella, G., Finazzi, M., Ciccacci, F., Bottegoni, F.

“…We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally…”
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Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature by Bottegoni, F., Ferrari, A., Cecchi, S., Finazzi, M., Ciccacci, F., Isella, G.

“…We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons,…”
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Spin diffusion in Pt as probed by optically generated spin currents by Bottegoni, F., Ferrari, A., Rortais, F., Vergnaud, C., Marty, A., Isella, G., Finazzi, M., Jamet, M., Ciccacci, F.

“…We investigate the dependence of the photoinduced inverse spin-Hall effect (ISHE) signal in a set of Pt/Ge(001) junctions as a function of the Pt thickness…”
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Pure spin currents in Ge probed by inverse spin-Hall effect by Bottegoni, F., Zucchetti, C., Finazzi, M., Isella, G., Ciccacci, F.

“…We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are…”
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Crystal field and low energy excitations measured by high resolution RIXS at the L3 edge of Cu, Ni and Mn by Ghiringhelli, G., Piazzalunga, A., Wang, X., Bendounan, A., Berger, H., Bottegoni, F., Christensen, N., Dallera, C., Grioni, M., Grivel, J.-C., Moretti Sala, M., Patthey, L., Schlappa, J., Schmitt, T., Strocov, V., Braicovich, L.

“…Resonant inelastic x-ray scattering in the soft x-ray regime has been profiting much from technical advances that have lowered considerably the instru- mental…”
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Experimental evaluation of the spin-Hall conductivity in Si-doped GaAs by Bottegoni, F., Ferrari, A., Isella, G., Finazzi, M., Ciccacci, F.

“…We performed photoinduced inverse spin-Hall effect (ISHE) measurements on Si-doped bulk GaAs at room temperature. The spin current is optically injected in the…”
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Enhanced orbital mixing in the valence band of strained germanium by Bottegoni, F., Ferrari, A., Isella, G., Finazzi, M., Ciccacci, F.

“…We give a theoretical explanation of the very high electron-spin polarization measured in compressively strained Ge layers through spin-polarized photoemission…”
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From Cr carbide to Cr oxide through a graphene layer by Picone, A., Lodesani, A., Capra, M., Brambilla, A., Bottegoni, F., Jugovac, M., Kundu, Asish K., Sheverdyaeva, P.M., Moras, P.

“…[Display omitted] •CrC2 is grown by intercalation of Cr at the graphene/Ni(1 1 1) interface.•The oxidation at relatively low pressure of molecular oxygen…”
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Epitaxial Si sub(1-x)Ge sub(x) alloys studied by spin-polarized photoemission by Ferrari, A, Bottegoni, F, Isella, G, Cecchi, S, Ciccacci, F

“…Spin-polarized photoemission is used to study Si sub(1-x) Ge sub(x) alloys epitaxially grown on a Si substrate. Spin-oriented electrons are generated in the…”
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Epitaxial Si 1 − x Ge x alloys studied by spin-polarized photoemission by Ferrari, A., Bottegoni, F., Isella, G., Cecchi, S., Ciccacci, F.

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