Search Results - "Botchkarev, A.E"

Ohmic contacts and schottky barriers to n-GaN by Fan, Z., Mohammad, S. N., Kim, W., Aktas, Ö., Botchkarev, A. E., Suzue, K., Morkoc, H., Duxstad, K., Haller, E. E.

“…Gallium nitride is a highly promising wide bandgap semiconductor with applications in high power electronic devices and optoelectronic devices. For these…”
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Optical properties and defects in GaAsN and InGaAsN films and quantum well structures by Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S

“…Photoluminescence and microcathodoluminescence spectra of thick-film GaAsN and InGaAsN structures and GaAs/InGaAsN, AlGaAs/InGaAsN quantum wells (QWs) were…”
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Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy by Van Nostrand, Joseph E, Chey, S.Jay, Cahill, David G, Botchkarev, A.E, Morkoç, H

“…Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]…”
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GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition by Park, D.G., Tao, M., Reed, J., Suzue, K., Botchkarev, A.E., Fan, Z., Gao, G.B., Chey, S.J., Van Nostrand, J., Cahill, D.G., Morkoç, H.

“…The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a…”
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