Search Results - "Borroto, Alejandro"
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Influence of the nucleation surface on the growth of epitaxial Al2O3 thermal CVD films deposited on cemented carbides
Published in Materials & Design (01-04-2022)“…[Display omitted] •The nucleation of α- and κ-Al2O3 can be controlled with specific nucleation treatments.•α-Al2O3 is the preferred alumina phase to be…”
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Ultrafast laser-induced topochemistry on metallic glass surfaces
Published in Materials & Design (01-08-2024)“…Manufacturing multifunctional nanocomposite materials and engineered surface nanopatterns involves a strategic blend of topography, crystal structures, and…”
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High-Density Nanowells Formation in Ultrafast Laser-Irradiated Thin Film Metallic Glass
Published in Nano-micro letters (01-12-2022)“…Highlights Ultrafast laser-induced nano-topography modifications: generation of highly concentrated 20 nm diameter nanowells on the surface with expected…”
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4
Initial Morphology and Feedback Effects on Laser-Induced Periodic Nanostructuring of Thin-Film Metallic Glasses
Published in Nanomaterials (Basel, Switzerland) (22-04-2021)“…Surface nanostructuring by femtosecond laser is an efficient way to manipulate surface topography, creating advanced functionalities of irradiated materials…”
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Nanostructured Zr-Cu metallic glass thin films with tailored electrical and optical properties
Published in Journal of alloys and compounds (10-12-2023)“…Nanostructured metallic glass thin films (NMGTF) have attracted increasing attention because they are amorphous materials of tunable microstructure, which…”
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Better understand the crystallization dynamics of ZrCu TFMGs: Benefits of combining global and local in situ approaches
Published in Journal of alloys and compounds (05-06-2024)“…This work describes crystallization mechanisms in a model ZrCu thin film metallic glass, synthesized through magnetron sputtering. Global-scale…”
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ZrCuAg Thin-Film Metallic Glasses: Toward Biostatic Durable Advanced Surfaces
Published in ACS applied materials & interfaces (14-04-2021)“…A combinatorial approach has served as a high-throughput strategy to identify compositional windows with optimized desired properties. Here, ZrCuAg thin-film…”
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WTe 2 Synthesis by Tellurization of W Precursors Using Isothermal Close Space Vapor Transport Annealing
Published in Physica status solidi. A, Applications and materials science (01-12-2018)“…The preparation of WTe 2 by isothermal tellurium annealing of sputtered W or WO 3 precursors is reported. X‐ray diffraction, energy dispersive, and Raman…”
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Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature
Published in ACS applied electronic materials (28-09-2021)“…Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and optoelectronic devices. However, the practical use of this…”
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10
WTe2 Synthesis by Tellurization of W Precursors Using Isothermal Close Space Vapor Transport Annealing
Published in Physica status solidi. A, Applications and materials science (06-12-2018)“…The preparation of WTe2 by isothermal tellurium annealing of sputtered W or WO3 precursors is reported. X‐ray diffraction, energy dispersive, and Raman…”
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Real-time high-temperature scanning indentation: Probing physical changes in thin-film metallic glasses
Published in Applied materials today (01-09-2021)“…•HTSI is a new method to measure thermally activated mechanisms in TFMGs•Real-time monitoring of physical changes in ZrCu TFMGs was performed.•The temperature…”
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Approaching Theoretical Band Gap of ZnSnN 2 Films via Bias Magnetron Cosputtering at Room Temperature
Published in ACS applied electronic materials (28-09-2021)“…Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and optoelectronic devices. However, the practical use of this…”
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13
Structural and mechanical properties of Zr1−x Mox thin films: From the nano-crystalline to the amorphous state
Published in Journal of alloys and compounds (30-12-2017)“…Zr1−xMox thin films were synthesized on glass substrates by co-sputtering molybdenum and zirconium targets in the presence of argon with x in the 0.32–0.95…”
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