Search Results - "Bord, O.V."

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  1. 1

    Numerical study of SiC CVD in a vertical cold-wall reactor by Vorob'ev, A.N., Karpov, S.Yu, Bogdanov, M.V., Komissarov, A.E., Bord, O.V., Zhmakin, A.I., Makarov, Yu.N.

    Published in Computational materials science (01-07-2002)
    “…The conventional heat and mass transport model is extended to describe silicon cluster formation in the gas phase and is employed for a numerical analysis of…”
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    Journal Article
  2. 2

    Gallium droplet formation during MOVPE and thermal annealing of GaN by Karpov, S.Yu, Bord, O.V, Talalaev, R.A, Makarov, Yu.N

    “…Conditions favorable for liquid droplet appearance on the surface of GaN can be predicted for metal–organic vapor phase epitaxy and for thermal annealing of…”
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    Journal Article
  3. 3

    Advanced model for the simulation of BST-film growth with MOCVD by Vorob’ev, A.N., Archakov, I.Yu, Bord, O.V., Smirnov, S.A., Karpov, S.Yu, Makarov, Yu.N., Reinhold, M., Schumacher, M., Heuken, M.

    Published in Synthetic metals (02-06-2003)
    “…An advanced model of two- and three dimensional (2D and 3D) heat and mass transport coupled with surface chemistry and gas-phase clustering is developed for…”
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    Journal Article
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