Search Results - "Booker, Ian D."

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device by Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A, Rendler, Torsten, Booker, Ian D, Ul Hassan, Jawad, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G, Son, Nguyen Tien, Ohshima, Takeshi, Bockstedte, Michel, Gali, Adam, Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

“…Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge…”
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Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry by Stenberg, Pontus, Booker, Ian D., Karhu, Robin, Pedersen, Henrik, Janzén, Erik, Ivanov, Ivan G.

“…Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and…”
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Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC by BOOKER, Ian D, JAWAD UL HASSAN, LILJA, Louise, BEYER, Franziska C, KARHU, Robin, BERGMAN, J. Peder, DANIELSSON, Örjan, KORDINA, Olof, SVEINBJÖRNSSON, Einar Ö, JANZEN, Erik

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Chloride-based SiC growth on a-axis 4H–SiC substrates by Booker, Ian D., Farkas, Ildiko, Ivanov, Ivan G., Hassan, Jawad ul, Janzén, Erik

“…SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped…”
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The influence of growth conditions on carrier lifetime in 4H–SiC epilayers by Lilja, Louise, Booker, Ian D., Hassan, Jawad ul, Janzén, Erik, Bergman, J. Peder

“…4H–SiC homoepitaxial layers have been grown in a horizontal hot-wall CVD (chemical vapor deposition) reactor and the measured carrier lifetimes have been…”
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Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC by Booker, Ian Don, Ul Hassan, Jawad, Lilja, Louise, Beyer, Franziska, Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar, Janzén, Erik

“…4H-SiC epilayers grown by standard and chlorinated chemistry were analyzed for their minority carrier lifetime and deep level recombination centers using…”
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Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC by Booker, Ian D., Hassan, Jawad Ul, Lilja, Louise, Beyer, Franziska C., Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar Ö., Janzén, Erik

“…4H-SiC epilayers grown by standard and chlorinated chemistry were analyzed for their minority carrier lifetime and deep level recombination centers using…”
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Carrier Lifetime Relevant Deep Levels in SiC by Booker, Ian D

“…Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these…”
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Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device by Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A, Rendler, Torsten, Booker, Ian D, Hassan, Jawad Ul, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G, Son, Nguyen Tien, Ohshima, Takeshi, Bockstedte, Michel, Gali, Adam, Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

“…Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different…”
Get full text