A comprehensive study of simultaneous RF-PECVD synthesis of n-diamond and carbon nanowalls hybrid structure over a large area
In this study, n-diamond–carbon nanowalls hybrid structure was synthesized on a 4-inch diameter silicon wafer by RF-PECVD technique (type CCP). A comprehensive analysis of the structure was carried out at the beginning of growth and after a long period of synthesis using electron microscopy, transmi...
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Published in: | Carbon (New York) Vol. 214; p. 118332 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier Ltd
01-10-2023
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Online Access: | Get full text |
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Summary: | In this study, n-diamond–carbon nanowalls hybrid structure was synthesized on a 4-inch diameter silicon wafer by RF-PECVD technique (type CCP). A comprehensive analysis of the structure was carried out at the beginning of growth and after a long period of synthesis using electron microscopy, transmission microscopy, Raman spectroscopy, and X-ray diffraction techniques. As the analysis showed, feeding carbon monoxide (CO) to a gas mixture of methane (CH4), argon (Ar), and hydrogen (H2) induces the formation of n-diamond particles in a basal layer. By using plasma-enhanced etching in an oxygen-containing medium, carbon nanowalls (CNWs) were successfully removed, and the underlying layer containing n-diamond was analyzed. For the first time, X-ray diffraction results of a separate n-diamond phase were obtained for this layer.
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•The n-diamond-carbon nanowalls structure was fabricated on a four-inch silicon wafer by plasma-chemical vapor deposition.•Сarbon monoxide feeding induces the formation of crystals with an n-diamond structure.•The presence of the individual n-diamond phase was confirmed by XRD analysis.•An average size and phase evolution of n-diamond were analyzed by HRTEM.•A detailed study of n-diamond-carbon nanowalls structure evolution with synthesis time was conducted using Raman, SEM and TEM techniques. |
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ISSN: | 0008-6223 1873-3891 |
DOI: | 10.1016/j.carbon.2023.118332 |