Multilayer multicomponent semiconductor structures for microelectronics formed using laser and thin film technology

The authors present technological doping processes which enable one to obtain the smallest thicknesses of doped layers (300-500 nm). The use of a laser as a technological tool makes it possible to reduce the thickness of modified layers to 10 nm and to build a fully-automatic low-temperature technol...

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Bibliographic Details

Published in:	Digest IEEE/Leos 1996 Summer Topical Meeting. Advanced Applications of Lasers in Materials and Processing pp. 36 - 37
Main Authors:	Kiyak, S.G., Bonchik, O.Y., Pokhmurska, A.V., Savitsky, G.V.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1996
Subjects:	Chemical lasers Contacts Gallium arsenide Indium phosphide Microelectronics Nonhomogeneous media Optical materials Semiconductor device doping Semiconductor lasers Solid lasers
Online Access:	Get full text
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