Search Results - "Bonanomi, M."

CDK12 promotes tumorigenesis but induces vulnerability to therapies inhibiting folate one-carbon metabolism in breast cancer by Filippone, M. G., Gaglio, D., Bonfanti, R., Tucci, F. A., Ceccacci, E., Pennisi, R., Bonanomi, M., Jodice, G., Tillhon, M., Montani, F., Bertalot, G., Freddi, S., Vecchi, M., Taglialatela, A., Romanenghi, M., Romeo, F., Bianco, N., Munzone, E., Sanguedolce, F., Vago, G., Viale, G., Di Fiore, P. P., Minucci, S., Alberghina, L., Colleoni, M., Veronesi, P., Tosoni, D., Pece, S.

“…Cyclin-dependent kinase 12 (CDK12) overexpression is implicated in breast cancer, but whether it has a primary or only a cooperative tumorigenic role is…”
Get full text

Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories by Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S.

“…We studied the angular dependence of heavy-ion induced errors and threshold voltage shifts in Flash memories. Combining experiments and Geant4-based…”
Get full text

Statistical Model for Random Telegraph Noise in Flash Memories by Monzio Compagnoni, C., Gusmeroli, R., Spinelli, A.S., Lacaita, A.L., Bonanomi, M., Visconti, A.

“…This paper presents a new physics-based statistical model for random telegraph noise in Flash memories. From the probabilistic superposition of elementary…”
Get full text

Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle by Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Ferlet-Cavrois, V.

“…We present the first evidence of single event upsets in 45-nm phase change memories caused by high linear energy transfer (LET) heavy ions at tilted angles…”
Get full text

Upsets in Erased Floating Gate Cells With High-Energy Protons by Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Calabrese, M., Chiavarone, L., Ferlet-Cavrois, V., Schwank, J. R., Shaneyfelt, M. R., Dodds, N., Trinczek, M., Blackmore, E.

“…We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory…”
Get full text

Radiation induced leakage current in floating gate memory cells by Cellere, G., Larcher, L., Paccagnella, A., Visconti, A., Bonanomi, M.

“…Single ions impacting on SiO/sub 2/ layers generate tracks of defects which may result in a Radiation Induced Leakage Current (RILC). This current is usually…”
Get full text

Error Instability in Floating Gate Flash Memories Exposed to TID by Bagatin, M., Gerardin, S., Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S.

“…We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash memories with both NAND and NOR architecture. We…”
Get full text

Time-domain spectroscopy of methane excited by resonant high-energy mid-IR pulses by Crippa, G, Faccialà, D, Prasannan Geetha, P, Pusala, A, Musheghyan, M, Assion, A, Bonanomi, M, Cinquanta, E, Ciriolo, A G, Devetta, M, Fazzi, D, Gatto, L, De Silvestri, S, Vozzi, C, Stagira, S

“…Abstract We describe the implementation of nonlinear time-domain spectroscopy of rotovibrational IR-active modes in methane through broadband Four-Wave Mixing…”
Get full text

Transient conductive path induced by a Single ion in 10 nm SiO2 Layers by Cellere, G, Paccagnella, A, Visconti, A, Bonanomi, M, Candelori, A

Get full text

Cycling Effect on the Random Telegraph Noise Instabilities of nor and nand Flash Arrays by Compagnoni, C.M., Spinelli, A.S., Beltrami, S., Bonanomi, M., Visconti, A.

“…The impact of program/erase (P/E) cycling on the random telegraph noise (RTN) threshold voltage instability of NOR and NAND flash memories is studied in…”
Get full text

Single Event Effects in 90-nm Phase Change Memories by Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Pellizzer, F., Vela, M., Ferlet-Cavrois, V.

“…Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for…”
Get full text

Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Harboe-Sorensen, R., Virtanen, A.

“…Single, high energy, high LET, ions impacting on a Floating gate array on grazing or near-grazing angles lead to the creation of long traces of FGs with…”
Get full text

Effect of different total ionizing dose sources on charge loss from programmed floating gate cells by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Candelori, A., Lora, S.

“…We irradiated programmed Floating Gate (FG) memory arrays with different radiation sources, including 10 keV X-rays, /sup 60/Co /spl gamma/-rays, and 27 MeV…”
Get full text

Ionizing radiation effects on floating gates by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M.

“…Floating gate (FG) memories, and in particular Flash, are the dominant among modern nonvolatile memory technologies. Their performance under ionizing radiation…”
Get full text

Governing Collaborative Project Delivery as a Common-Pool Resource Scenario by Hall, Daniel M., Bonanomi, Marcella M.

“…When collaborative project delivery models such as integrated project delivery (IPD) combine project resources, share decision-making rights, and distribute…”
Get full text

Single Event Effects in NAND Flash Memory Arrays by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S.

“…We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results…”
Get full text

Experimental assessment of electron ionization cross sections by Basaglia, T., Bonanomi, M., Cattorini, F., Han, M. C., Hoff, G., Kim, C. H., Kim, S. H., Marcoli, M., Pia, M. G., Ronchieri, E., Saracco, P.

“…We report preliminary results of an extensive investigation of theoretical and semi-empirical calculations of electron impact ionization cross sections,…”
Get full text

Secondary Effects of Single Ions on Floating Gate Memory Cells by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M.

“…A programmed Floating Gate (FG) hit by a heavy ion experiences a large charge loss, which degrades the stored information. However, as a result of irradiation,…”
Get full text

Total Ionizing Dose Effects in NOR and NAND Flash Memories by Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Schwank, J.R., Shaneyfelt, M.R., Paillet, P.

“…We irradiated floating gate (FG) memories with nor and nand architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays,…”
Get full text

The impact of digital transformation on formal and informal organizational structures of large architecture and engineering firms by Bonanomi, Marcella M, Hall, Daniel M, Staub-French, Sheryl, Tucker, Aubrey, Talamo, Cinzia Maria Luisa

“…Purpose The purpose of this paper is to understand the impact of digital technologies adoption on the forms of organization of large architecture and…”
Get full text