Search Results - "Bolshakov, A.D."
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Two approaches to two-stage growth of GaP nanowires
Published in 2022 International Conference Laser Optics (ICLO) (20-06-2022)“…We compare the two approaches to the growth of ensembles of self-catalyzed GaP nanowires, which both allow independent control of the length and diameter…”
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Conference Proceeding -
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Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure
Published in Materials science in semiconductor processing (01-02-2019)“…In this paper we study the solar cell based on GaN nanowires array grown on Si substrate with buffer SiC layer via molecular beam epitaxy. Crystal quality of…”
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Journal Article -
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Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
Published in Semiconductors (Woodbury, N.Y.) (01-04-2018)“…In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential…”
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Journal Article -
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Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
Published in Semiconductors (Woodbury, N.Y.) (01-11-2016)“…Using methods of numerical simulation, the modes of operation are considered and structures are determined for solar cells of combined dimension based on a…”
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Journal Article -
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Lateral growth and shape of semiconductor nanowires
Published in Semiconductors (Woodbury, N.Y.) (2013)“…The lateral growth of semiconductor nanowires and its influence on the nanowire shape in the case of nanocrystal formation according to the diffusion mechanism…”
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Journal Article -
6
Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds
Published in Physics of the solid state (01-07-2010)“…A theoretical model has been proposed for calculating the surface energy of nanowhiskers in the nearest neighbor approximation. The surface energy has been…”
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Journal Article