Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum

Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leakage degradation is a key parameter to consider whe...

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Bibliographic Details
Published in:	2015 IEEE Radiation Effects Data Workshop (REDW) pp. 1 - 6
Main Authors:	Armstrong, Sarah E., Bole, Ken, Bradley, Holly, Johnson, Ethan, Staggs, James, Shedd, Walter, Cole, Patrick L., Rice, Casey H., Ingalls, J. David, Hedge, Casey C., Duncan, Adam R., Olson, Brian D.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2015
Subjects:	Gallium nitride HEMTs Logic gates MODFETs Radiation effects Radio frequency Testing
Online Access:	Get full text
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Summary:	Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leakage degradation is a key parameter to consider when selecting devices. Variations in the manufacturing process may drive product selection for use in harsh environments.
ISBN:	9781467376419 1467376418
DOI:	10.1109/REDW.2015.7336715