Search Results - "Boieriu, P."

Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes by Boieriu, P., Buurma, C., Bommena, R., Blissett, C., Grein, C., Sivananthan, S.

“…Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only…”
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Influence of Hydrogenation on Electrical Conduction in HgCdTe Thin Films on Silicon by Fahey, S., Boieriu, P., Morath, C., Guidry, D., Treider, L., Bommena, R., Zhao, J., Buurma, C., Grein, C., Sivananthan, S.

“…HgCdTe is the standard state-of-the-art infrared detector material for space applications. HgCdTe-based infrared photon detector performance can be hindered…”
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Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211) by Boieriu, P., Grein, C. H., Jung, H. S., Garland, J., Nathan, V.

“…Photovoltaic p - n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the…”
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Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si by Boieriu, P., Grein, C. H., Velicu, S., Garland, J., Fulk, C., Sivananthan, S., Stoltz, A., Bubulac, L., Dinan, J. H.

“…We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by…”
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Microstructural characterization of HgTe/HgCdTe superlattices by Aoki, T., Takeguchi, M., Boieriu, P., Singh, R., Grein, C., Chang, Y., Sivananthan, S., Smith, David J.

“…The effects of annealing on the microstructure of HgTe/Hg0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by…”
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p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors by JUNG, H. S, BOIERIU, P, GREIN, C. H

“…HgTe/CdTe superlattices (SL) have been studied for applications involving the detection of very-long wavelength infrared (VLWIR) detectors. In this study,…”
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Low-temperature activation of As in Hg1-xCdxTe(211) grown on si by molecular beam epitaxy by BOIERIU, P, CHEN, Y, NATHAN, V

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Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si by BOIERIU, P, GREIN, C. H, GARLAND, J, VELICU, S, FULK, C, STOLTZ, A, BUBULAC, L, DINAN, J. H, SIVANANTHAN, S

“…We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in…”
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MBE growth and device processing of MWIR HgCdTe on large area Si substrates by BRILL, G, VELICU, S, BOIERIU, P, CHEN, Y, DHAR, N. K, LEE, T. S, SELAMET, Y, SIVANANTHAN, S

“…The traditional substrate of choice for HgCdTe material growth has been lattice matched bulk CdZnTe material. However, as larger array sizes are required for…”
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Wurtzite CdS on CdTe grown by molecular beam epitaxy by Boieriu, P., Sporken, R., Xin, Yan, Browning, N. D., Sivananthan, S.

“…Growth of single crystal wurtzite cadmium sulfide on CdTe(1 1 1 )B substrates has been achieved using molecular beam epitaxy. Reflection high-energy electron…”
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Monolithically integrated HgCdTe focal plane arrays by VELICU, S, LEE, T. S, GREIN, C. H, BOIERIU, P, CHEN, Y. P, DHAR, N. K, DINAN, J, LIANOS, D

“…The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe…”
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HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation by VELICU, S, BADANO, G, SELAMET, Y, GREIN, C. H, FAURIE, J. P, SIVANANTHAN, S, BOIERIU, P, RAFOL, D. O. N, ASHOKAN, R

“…Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and…”
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SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE by Boieriu, P, Sporken, R, Adriaens, A, Xin, Yan, Browning, N.D, Sivananthan, S

“…In this study we have grown epitaxial layers of wurtzite–CdS on CdTe( 1 ̄ 1 ̄ 1 ̄ )B/Si substrates using molecular beam epitaxy. Indium was used to obtain…”
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Selective epitaxy of cadmium telluride on silicon by MBE by Sporken, R., Grajewski, D., Xin, Y., Wiame, F., Brill, G., Boieriu, P., Prociuk, A., Rujirawat, S., Dhar, N. K., Sivananthan, S.

“…CdTe (1 1 1 )B was grown on As-terminated Si(111) by molecular beam epitaxy (MBE). Nucleation and interface properties were studied by photoelectron…”
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Carbon nitride thin films prepared by a capacitively coupled RF plasma jet by Dinescu, G., Aldea, E., Boieriu, P., Musa, G., Andrei, A., Dinescu, M., Brussaard, G.J.H., Severens, R.J., van de Sanden, M.C.M., Schram, D.C.

“…Carbon nitride thin films have been downstream deposited from a nitrogen plasma beam sustained by a capacitively coupled discharge generated between a RF…”
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Valence band offset at the CdS/CdTe interface by Boieriu, P., Sporken, R., Sivananthan, S.

“…Wurtzite CdS was grown by molecular beam epitaxy on CdTe (1̄1̄1̄) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron…”
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Low-temperature activation of As in Hg^sub 1-x^Cd^sub x^Te(211) grown on Si by molecular beam epitaxy by Boieriu, P, Chen, Y, Nathan, V

“…The HgCdTe infrared detectors and test structures based on dual or multicolor HgCdTe are desirable for various applications. It is important to control both…”
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