Search Results - "Boichot, R."

High-temperature oxidation resistance of chromium-based coatings deposited by DLI-MOCVD for enhanced protection of the inner surface of long tubes by Michau, A., Maury, F., Schuster, F., Lomello, F., Brachet, J.-C., Rouesne, E., Le Saux, M., Boichot, R., Pons, M.

“…For nuclear safety issues, there is an international effort to develop innovative “Enhanced Accident Tolerant Fuels” (EATF) materials. EATF cladding tubes are…”
Get full text

A genetic algorithm for topology optimization of area-to-point heat conduction problem by Boichot, R., Fan, Y.

“…This paper presents a way of solving the classical area (volume)-to-point heat conduction problem by the means of a simple Genetic Algorithm (GA) in square…”
Get full text

Chromium carbide growth at low temperature by a highly efficient DLI-MOCVD process in effluent recycling mode by Michau, A., Maury, F., Schuster, F., Boichot, R., Pons, M., Monsifrot, E.

“…The effect of direct recycling of effluents on the quality of CrxCy coatings grown by MOCVD using direct liquid injection (DLI) of bis(ethylbenzene)chromium(0)…”
Get full text

High temperature properties of AlN coatings deposited by chemical vapor deposition for solar central receivers by Chen, D., Colas, J., Mercier, F., Boichot, R., Charpentier, L., Escape, C., Balat-Pichelin, M., Pons, M.

“…There is an increasing interest for tower concentrated solar power (CSP) systems which can work at temperatures higher than 1073 K to optimize the efficiency…”
Get full text

Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire by Lay, S., Mercier, F., Boichot, R., Giusti, G., Pons, M., Blanquet, E.

“…The origin of threading dislocations (TDs) in nitride films is not completely understood but it is well established that they degrade the film properties. This…”
Get full text

Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition by Boichot, R, Tian, L, Richard, M.-I, Crisci, A, Chaker, A, Cantelli, V, Coindeau, S, Lay, S, Ouled, T, Guichet, C, Chu, M. H, Aubert, N, Ciatto, G, Blanquet, E, Thomas, O, Deschanvres, J.-L, Fong, D. D, Renevier, H

“…A complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer…”
Get full text

Scale up of a DLI-MOCVD process for the internal treatment of a batch of 16 nuclear fuel cladding segments with a CrCx protective coating by Michau, A., Gazal, Y., Addou, F., Maury, F., Duguet, T., Boichot, R., Pons, M., Monsifrot, E., Maskrot, H., Schuster, F.

“…Direct liquid injection – metalorganic chemical vapor deposition (DLI-MOCVD) is the most advanced process dedicated to the internal protection of nuclear fuel…”
Get full text

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy by Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M., Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K., Pons, M.

“…Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up…”
Get full text

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy by Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K., Pons, M.

“…► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial…”
Get full text

Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer by Boichot, R., Coudurier, N., Mercier, F., Lay, S., Crisci, A., Coindeau, S., Claudel, A., Blanquet, E., Pons, M.

“…AlN is epitaxially grown on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy (HT-HVPE) at constant growth rate and thickness, while varying the…”
Get full text

HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process by Pons, M., Su, J., Chubarov, M., Boichot, R., Mercier, F., Blanquet, E., Giusti, G., Pique, D.

“…The different steps of the fabrication of epitaxial AlN films (0.5–20µm) by high temperature chemical vapor deposition called also HVPE (Hydride Vapor Phase…”
Get full text

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation by Pons, M., Boichot, R., Coudurier, N., Claudel, A., Blanquet, E., Lay, S., Mercier, F., Pique, D.

“…The application of AlN films in optoelectronics, sensors and high temperature coatings is strongly dependent on the nano-micro-structure of the film, impurity…”
Get full text

Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation by Boichot, R., Claudel, A., Baccar, N., Milet, A., Blanquet, E., Pons, M.

“…AlN growth by HTCVD (High Temperature Chemical Vapor Deposition) from AlCl 3 and NH 3 is currently a promising way to obtain thick, compact layers of aluminum…”
Get full text

Night cooling with a Ventilated Internal Double Wall by Fraisse, G., Boichot, R., Kouyoumji, J.-L., Souyri, B.

“…This study investigates the feasibility of a device to improve summer comfort in wood-frame houses using a Ventilated Internal Double Wall (VIDW). The idea is…”
Get full text

Experimental kinetic study of oxidation of uranium monocarbide powders under controlled oxygen partial pressures below 230°C by Berthinier, C., Rado, C., Dugne, O., Cabie, M., Chatillon, C., Boichot, R., Blanquet, E.

“…Uranium monocarbide (UC) powders are known to be easily oxidised by gas mixtures containing oxygen. In this study, the oxidation of UC micron powders was…”
Get full text

Experimental study of uranium carbide pyrophoricity by Berthinier, C., Coullomb, S., Rado, C., Blanquet, E., Boichot, R., Chatillon, C.

“…Mixed plutonium and uranium monocarbide (UPuC) is considered as a possible fuel material for future nuclear gas fast reactors. Its safe handling is currently a…”
Get full text

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process by Claudel, A., Blanquet, E., Chaussende, D., Boichot, R., Doisneau, B., Berthomé, G., Crisci, A., Mank, H., Moisson, C., Pique, D., Pons, M.

“…Thick AlN layers were grown by high temperature chemical vapor deposition (HTCVD) on 8° off-axis (0 0 0 1) 4H-SiC, on-axis (0 0 0 1) 6H-SiC and on-axis (0 0 0…”
Get full text

Agglomeration of diesel particles by an electrostatic agglomerator under positive DC voltage: Experimental study by Boichot, R., Bernis, A., Gonze, E.

“…We propose characterizing a new geometry of electrostatic agglomerator using particles produced by a diesel engine. The geometry consists of a positive DC…”
Get full text

Treatment of submicron particles using an electrostatic agglomerator in DC-negative voltage: Re-entrainment experimental study and modeling by Boichot, R., Charvet, A., Goldin, T., Bernis, A.

“…The aim of this study is to highlight the re-entrainment phenomenon encountered with an electrostatic agglomerator having a fibrous collecting electrode and…”
Get full text

High temperature chemical vapor deposition of AlN/W1―XReX coatings on bulk SiC by ROKI, F.-Z, PONS, M, BERNE, Ph, POISSONNET, S, CHAFFRON, L, MERCIER, F, BOICHOT, R, BERNARD, C, BLANQUET, E, MORAIS, M, HUOT, G, CLAUDEL, A, PIQUE, D

“…The residual porosity of structural silicon carbide (SiC) composites limits their use in advanced nuclear systems. The use of thick coatings of high-Z…”
Get full text