Search Results - "Bohmayr, W."
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Monte Carlo simulation of silicon amorphization during ion implantation
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-12-1998)“…We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted single-crystalline silicon using results of…”
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Journal Article -
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Trajectory split method for Monte Carlo simulation of ion implantation
Published in IEEE transactions on semiconductor manufacturing (01-11-1995)“…A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The…”
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Journal Article -
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Monte Carlo simulation of silicon amorphization during ion implantation
Published in 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) (1996)“…When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The…”
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Conference Proceeding
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Trajectory split method for Monte Carlo simulation of ion implantation demonstrated by three-dimensional poly-buffered LOCOS field oxide corners
Published in 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (1995)“…The benefits of an acceleration method for two and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is demonstrated by…”
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Conference Proceeding -
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Investigation of channeling in field oxide corners by three-dimensional Monte Carlo simulation of ion implantation
Published in Proceedings of 4th International Conference on Solid-State and IC Technology (1995)“…The effects of channeling of source/drain (S/D) implants in field oxide corners are investigated by three-dimensional Monte Carlo simulation of ion…”
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Conference Proceeding