Search Results - "Boháček, Pavol"

Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness by Zaťko, Bohumír, Hrubčín, Ladislav, Šagátová, Andrea, Osvald, Jozef, Boháček, Pavol, Kováčová, Eva, Halahovets, Yuriy, Rozov, Sergey V., Sandukovskij, V.G.

“…[Display omitted] •Functional Schottky barrier diodes based on 4H-SiC epitaxial layer were fabricated.•Typical reverse current of measured 4H-SiC diodes was…”
Get full text

Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detectors covered by LiF film for thermal neutron detection by Sedlačková, Katarína, Zat'ko, Bohumír, Šagátová, Andrea, Nečas, Vladimír, Boháček, Pavol, Sekáčová, Mária

“…[Display omitted] •Thermal neutron detection using (SI) GaAs and 4H-SiC semiconductor detectors.•6LiF conversion layer essential; its optimal thickness…”
Get full text

From single GaAs detector to sensor for radiation imaging camera by Šagátová, Andrea, Zaťko, Bohumír, Nečas, Vladimír, Dubecký, František, Ly Anh, Tu, Sedlačková, Katarína, Boháček, Pavol, Zápražný, Zdenko

“…[Display omitted] •The outstanding spectrometry with bulk SI GaAs detector was published.•The suitability of SI GaAs detectors for digital radiography was…”
Get full text

The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition by Huran, Jozef, Valovič, Albín, Boháček, Pavol, Shvetsov, Valery N., Kobzev, Alexander P., Borzakov, Sergey B., Kleinová, Angela, Sekáčová, Mária, Arbet, Juraj, Sasinková, Vlasta

“…► The influence of neutron irradiation on the properties of SiC and SiC(N) layer was investigated. ► Silicon carbide (SiC) and nitrogen-doped silicon carbide…”
Get full text

Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts by Dubecký, František, Oswald, Jiří, Kindl, Dobroslav, Hubík, Pavel, Dubecký, Matúš, Gombia, Enos, Šagátová, Andrea, Boháček, Pavol, Sekáčová, Mária, Nečas, Vladimír

“…Current–voltage (I–V) characteristics and photocurrent (PC) spectra (600–1000nm) of the metal–semiconductor–metal (M–S–M) structures based on high-quality…”
Get full text

Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics by Zaťko, Bohumír, Dubecký, František, Boháček, Pavol, Huran, Jozef, Nečas, Vladimír, Ryć, Leszek

“…This work deals with the evaluation of semi-insulating (SI) GaAs radiation detector applicable in the spectrometry of “soft” X-rays (1–20 keV) emitted by hot…”
Get full text

A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics by Dubecký, František, Zaťko, Bohumír, Hubík, Pavel, Gombia, Enos, Boháček, Pavol, Huran, Jozef, Sekáčová, M.

“…The present work describes current–voltage ( I– V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types…”
Get full text

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology by Huran, Jozef, Boháček, Pavol, Shvetsov, Valery N., Kobzev, Alexander P., Kleinová, Angela, Borzakov, Sergey B., Hrubčín, Ladislav, Sekáčová, Mária, Balalykin, Nikolay I.

“…Silicon carbide (SiC) and nitrogen‐doped silicon carbide (SiC(N)) films were deposited on p‐type Si(100) substrates at various deposition conditions by means…”
Get full text

On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors by Zaťko, Bohumír, Dubecký, František, Přibil, Jiří, Boháček, Pavol, Frollo, Ivan, Ščepko, Pavol, Mudroň, Ján, Gryboś, Pawel, Nečas, Vladimír

“…The paper describes the present status of the development of a portable, X-ray computer tomography (CT) mini-system, whose detection part is based on a double…”
Get full text

Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors by Boháček, Pavol, Zat’ko, Bohumír, Dubecký, František, Chromík, Štefan, Huran, Jozef, Sekáčová, Mária

“…In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs…”
Get full text

Role of electrode metallization in performance of semi-insulating GaAs radiation detectors by Dubecký, František, Boháček, Pavol, Sekáčová, Mária, Zaťko, Bohumír, Lalinský, Tibor, Linhart, Vladimír, Šagátová-Perd’ochová, Andrea, Mudroň, Ján, Pospíšil, Stanislav

“…In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is…”
Get full text

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology: Neutron irradiation effect on electrical characteristics of SiC films by Huran, Jozef, Boháček, Pavol, Shvetsov, Valery N., Kobzev, Alexander P., Kleinová, Angela, Borzakov, Sergey B., Hrubčín, Ladislav, Sekáčová, Mária, Balalykin, Nikolay I.

Get full text

Radiation hardness investigation of PECVD silicon carbide layers for PV applications by Huran, Jozef, Bohacek, Pavol, Kulikov, Sergey A., Bulavin, Maxim V., Sasinkova, Vlasta, Kleinova, Angela, Kobzev, Alexander P., Sekacova, Maria, Arbet, Juraj

“…Amorphous silicon carbide a-SiC:H layers were deposited on P-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical…”
Get full text