Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering. InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were...

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Bibliographic Details
Published in:Journal of crystal growth Vol. 507; pp. 46 - 49
Main Authors: Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-02-2019
Elsevier BV
Subjects:
A3. Molecular beam epitaxy
A3. Superlattices
B1. Antimonides
B3. Infrared devices
B3. Light emitting diodes
Carrier lifetime
Epitaxial growth
Gallium antimonides
Infrared radiation
Lattice matching
Light emitting diodes
Minority carriers
Organic light emitting diodes
Photoluminescence
Silicon
Substrates
Superlattices
Thermal management
A3. Superlattices
B1. Antimonides
B3. Light emitting diodes
A3. Molecular beam epitaxy
B3. Infrared devices
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Summary:•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering. InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal management and substrate transparency, and in spite of decreased minority carrier lifetime due to defects, as determined through spectrally resolved photoluminescence and ultrafast differential transmission measurements on comparable photoluminescence samples. For the smallest device sizes, this benefit was negated due to increased device failure at high current densities.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.10.047