Search Results - "Boggess, Thomas F."

Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes by Ricker, Russell J., Hudson, Andrew, Provence, Sydney, Norton, Dennis T., Olesberg, Jonathon T., Murray, Lee M., Prineas, John P., Boggess, Thomas F.

“…Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two…”
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Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared by Koerperick, Edwin J, Norton, Dennis T, Olesberg, Jonathon T, Olson, Benjamin V, Prineas, John P, Boggess, Thomas F

“…Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are…”
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Nonmagnetic semiconductor spin transistor by Hall, K. C., Lau, Wayne H., Gündoğdu, K., Flatté, Michael E., Boggess, Thomas F.

“…We propose a spin transistor using only nonmagnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum…”
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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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Electron and hole spin dynamics in semiconductor quantum dots by Gündoğdu, K., Hall, K. C., Koerperick, E. J., Pryor, C. E., Flatté, M. E., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G.

“…We report direct measurement of the spin dynamics of electrons and holes in self-assembled InAs quantum dots (QDs) through polarization-sensitive time-resolved…”
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Room-temperature electron spin relaxation in bulk InAs by Boggess, Thomas F., Olesberg, J. T., Yu, C., Flatté, Michael E., Lau, Wayne H.

“…Polarization-resolved, subpicosecond pump–probe measurements at a wavelength of 3.43 μm are used to determine the electron spin relaxation time T1 in bulk InAs…”
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Picosecond investigations of the excited-state transition at 532 nm in King's complex [(C5H5)Fe(CO)]4 and synthesized analogs by Allan, G. R, Rychnovsky, S. J, Venzke, C. H, Boggess, Thomas F, Tutt, Lee

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Nondegenerate two-photon absorption in GaSb by Olson, Benjamin V., Gehlsen, Michael P., Boggess, Thomas F.

“…The nonlinear optical absorption of n-type GaSb at 77K was investigated using time-resolved pump–probe techniques. By holding the pump wavelength constant and…”
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512 \times 512, 100 Hz Mid-Wave Infrared LED Microdisplay System by Ejzak, Garrett A., Dickason, Jonathan, Marks, Joshua A., Nabha, Kassem, McGee, Rodney T., Waite, Nicholas A., Benedict, Jake T., Hernandez, Miguel A., Provence, Sydney R., Norton, Dennis T., Prineas, John P., Goossen, Keith W., Kiamilev, Fouad E., Boggess, Thomas F.

“…The demand for high-speed and/or high-temperature infrared (IR) scene projectors has led to the development of systems based on IR light-emitting-diode (LED)…”
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Ultrafast electron capture into p-modulation-doped quantum dots by Gündoğdu, K., Hall, K. C., Boggess, Thomas F., Deppe, D. G., Shchekin, O. B.

“…Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We…”
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512 \,\times\,512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices by Norton, Dennis T., Olesberg, Jonathon T., McGee, Rodney T., Waite, Nicholas A., Dickason, Jonathan, Goossen, K. W., Lawler, John, Sullivan, Gerry, Ikhlassi, Amal, Kiamilev, Fouad, Koerperick, Edwin J., Murray, Lee M., Prineas, John P., Boggess, Thomas F.

“…Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A…”
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Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states by Hall, K. C., Koerperick, E. J., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G.

“…The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence…”
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Picosecond reverse saturable absorption in King's complex [(C5H5)Fe(CO)]4 by Allan, G. R, Labergerie, D. R, Rychnovsky, S. J, Boggess, Thomas F, Smirl, Arthur L, Tutt, Lee

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Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
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Efficient electron spin detection with positively charged quantum dots by Gündoğdu, K., Hall, K. C., Boggess, Thomas F., Deppe, D. G., Shchekin, O. B.

“…We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in…”
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Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots by Boggess, Thomas F., Zhang, L., Deppe, D. G., Huffaker, D. L., Cao, C.

“…Time-resolved photoluminescence upconversion with 200 fs resolution is used to investigate the carrier capture, energy relaxation, and radiative recombination…”
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Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots by Zhang, L., Boggess, Thomas F., Deppe, D. G., Huffaker, D. L., Shchekin, O. B., Cao, C.

“…The temperature-dependent dynamic response of 1.3-μm-InGaAs/GaAs quantum dots is investigated using time-resolved photoluminescence upconversion with…”
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Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots by Zhang, L., Boggess, Thomas F., Gundogdu, K., Flatté, Michael E., Deppe, D. G., Cao, C., Shchekin, O. B.

“…Subpicosecond time-resolved photoluminescence upconversion is used to measure the 12 K first-excited-state dynamics in large InGaAs/GaAs self-assembled quantum…”
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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes by Hasenberg, T. C., Day, P. S., Shaw, E. M., Magarrell, D. J., Olesberg, J. T., Yu, C., Boggess, Thomas F., Flátte, M. E.

“…We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger…”
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End to End Testing of IRLED Projectors by Barakhshan, Peyman, Volz, Jeffrey, Ricker, Russell J., Hernandez, Miguel, Landwehr, Aaron, Provence, Sydney, Nabha, Kassem, Houser, Rebekah, Prineas, John P., Campbell, Casey, Kiamilev, Fouad, Boggess, Thomas F.

“…In 2014, our team built the world's first infrared LED scene projector. This system is called the SLEDS projector and has been thoroughly tested and evaluated…”
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