Search Results - "Bogdanowicz, J."
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1
Nanofocusing of light into semiconducting fin photonic crystals
Published in Applied physics letters (22-02-2016)“…This letter demonstrates experimentally and investigates theoretically the possibility for enhanced light coupling into periodic arrays of nanoscale…”
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Journal Article -
2
Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts
Published in Ultramicroscopy (01-08-2017)“…•Compressed lateral dimension and oxygen penetration into the fin body are apparent.•Causes are converging and overlapping ion trajectories due to a unique tip…”
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Journal Article -
3
Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation
Published in Ultramicroscopy (01-05-2018)“…•Focused ion beam preparation damages and modifies the properties of atom probe tips.•Supra-bandgap absorption is enhanced.•Sub-bandgap absorption is turned…”
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4
On the understanding of local optical resonance in elongated dielectric particles
Published in Journal of quantitative spectroscopy & radiative transfer (01-10-2014)“…This paper discusses the peculiar light coupling and absorption properties of a dielectric particle with a varying nanoscale radius and a high aspect ratio. To…”
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5
Wafer-scale characterization for two-dimensional material layers
Published in Japanese Journal of Applied Physics (01-03-2024)“…Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology…”
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Impact of the apex of an elongated dielectric tip upon its light absorption properties
Published in Applied surface science (30-05-2014)“…•Periodic holes/spots with both low and high spatial frequencies are observed on nanoscale conical silicon tips illuminated with high-fluence laser pulses.•The…”
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Journal Article Conference Proceeding -
7
Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures
Published in Ultramicroscopy (01-03-2018)“…•Etching of SiO2 from an APT tip was implemented as a final tip preparation step.•Tip-shape induced artefacts are eliminated as shown on an SiGe fin embedded…”
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8
Light absorption in conical silicon particles
Published in Optics express (11-02-2013)“…The problem of the absorption of light by a nanoscale dielectric cone is discussed. A simplified solution based on the analytical Mie theory of scattering and…”
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Journal Article Web Resource -
9
Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts
Published in Ultramicroscopy (01-08-2017)“…We present atom probe analysis of 40nm wide SiGe fins embedded in SiO and discuss the root cause of artefacts observed in the reconstructed data. Additionally,…”
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10
Imaging of Overlay and Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements : AM: Advanced Metrology
Published in 2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (10-05-2021)“…Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic…”
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Conference Proceeding -
11
Optimal laser positioning for laser-assisted atom probe tomography
Published in Ultramicroscopy (01-09-2013)“…Laser-assisted atom probe tomography is a material analysis method based on field evaporating ions from a tip-shaped sample by a combination of a standing…”
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12
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Published in APL materials (01-05-2018)“…The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process…”
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13
Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics
Published in 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01-08-2020)“…Characterization of patterned nanostructures in modern nanoelectronic memory and logic devices using traditional optical critical dimension (OCD) metrology…”
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Conference Proceeding -
14
On the analysis of the activation mechanisms of sub-melt laser anneals
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05-12-2008)“…In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt…”
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15
Subtelomeric rearrangements in Polish subjects with intellectual disability and dysmorphic features
Published in Journal of applied genetics (01-01-2010)“…Fluorescent in situ hybridization (FISH) was performed in 76 patients referred to our department because of intellectual disability and dysmorphic features…”
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Inspection and metrology challenges for 3 nm node devices and beyond
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11-12-2021)“…We report on non-destructive inspection and metrology potential of high-voltage (HV) critical dimension scanning electron microscopy (CD-SEM) for 3 nm node…”
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Conference Proceeding -
17
Identification, characterization and purification of the lantibiotic staphylococcin T, a natural gallidermin variant
Published in Journal of applied microbiology (01-12-1999)“…B. FURMANEK, T. KACZOROWSKI, R. BUGALSKI, K. BIELAWSKI, J. BOGDANOWICZ and A.J. PODHAJSKA.1999.Staphylococcin T (StT), an antibacterial agent produced by a…”
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Dopant, composition and carrier profiling for 3D structures
Published in Materials science in semiconductor processing (01-05-2017)“…With the transition from planar to three-dimensional device architectures, devices such as FinFETs, TFETs and nanowires etc. become omnipresent. This requires…”
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Surgical Treatment of Renal Cell Carcinoma in a Horseshoe-shaped Kidney Concomitant with an Aortic Aneurysm
Published in European journal of vascular and endovascular surgery (01-09-2001)Get full text
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20
Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives
Published in Scripta materialia (15-04-2018)“…Atom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in a semiconductor device with high sensitivity…”
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