Search Results - "Bogdanowicz, J."

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  1. 1

    Nanofocusing of light into semiconducting fin photonic crystals by Bogdanowicz, J., Nuytten, T., Gawlik, A., Schulze, A., De Wolf, I., Vandervorst, W.

    Published in Applied physics letters (22-02-2016)
    “…This letter demonstrates experimentally and investigates theoretically the possibility for enhanced light coupling into periodic arrays of nanoscale…”
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    Journal Article
  2. 2

    Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts by Melkonyan, D., Fleischmann, C., Arnoldi, L., Demeulemeester, J., Kumar, A., Bogdanowicz, J., Vurpillot, F., Vandervorst, W.

    Published in Ultramicroscopy (01-08-2017)
    “…•Compressed lateral dimension and oxygen penetration into the fin body are apparent.•Causes are converging and overlapping ion trajectories due to a unique tip…”
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    Journal Article
  3. 3

    Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation by Bogdanowicz, J., Kumar, A., Fleischmann, C., Gilbert, M., Houard, J., Vella, A., Vandervorst, W.

    Published in Ultramicroscopy (01-05-2018)
    “…•Focused ion beam preparation damages and modifies the properties of atom probe tips.•Supra-bandgap absorption is enhanced.•Sub-bandgap absorption is turned…”
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    Journal Article
  4. 4

    On the understanding of local optical resonance in elongated dielectric particles by Bogdanowicz, J., Vandervorst, W.

    “…This paper discusses the peculiar light coupling and absorption properties of a dielectric particle with a varying nanoscale radius and a high aspect ratio. To…”
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    Journal Article
  5. 5

    Wafer-scale characterization for two-dimensional material layers by Moussa, A., Bogdanowicz, J., Groven, B., Morin, P., Beggiato, M., Saib, M., Santoro, G., Abramovitz, Y., Houchens, K., Ben Nissim, S., Meir, N., Hung, J., Urbanowicz, A., Koret, R., Turovets, I., Lee, B., Lee, W.T., Lorusso, G. F., Charley, A.-L.

    Published in Japanese Journal of Applied Physics (01-03-2024)
    “…Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology…”
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    Journal Article
  6. 6

    Impact of the apex of an elongated dielectric tip upon its light absorption properties by Bogdanowicz, J., Gilbert, M., Koelling, S., Vandervorst, W.

    Published in Applied surface science (30-05-2014)
    “…•Periodic holes/spots with both low and high spatial frequencies are observed on nanoscale conical silicon tips illuminated with high-fluence laser pulses.•The…”
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    Journal Article Conference Proceeding
  7. 7

    Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures by Melkonyan, D., Fleischmann, C., Veloso, A., Franquet, A., Bogdanowicz, J., Morris, R.J.H., Vandervorst, W.

    Published in Ultramicroscopy (01-03-2018)
    “…•Etching of SiO2 from an APT tip was implemented as a final tip preparation step.•Tip-shape induced artefacts are eliminated as shown on an SiGe fin embedded…”
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    Journal Article
  8. 8

    Light absorption in conical silicon particles by Bogdanowicz, J, Gilbert, M, Innocenti, N, Koelling, S, Vanderheyden, B, Vandervorst, W

    Published in Optics express (11-02-2013)
    “…The problem of the absorption of light by a nanoscale dielectric cone is discussed. A simplified solution based on the analytical Mie theory of scattering and…”
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    Journal Article Web Resource
  9. 9

    Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts by Melkonyan, D, Fleischmann, C, Arnoldi, L, Demeulemeester, J, Kumar, A, Bogdanowicz, J, Vurpillot, F, Vandervorst, W

    Published in Ultramicroscopy (01-08-2017)
    “…We present atom probe analysis of 40nm wide SiGe fins embedded in SiO and discuss the root cause of artefacts observed in the reconstructed data. Additionally,…”
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    Journal Article
  10. 10

    Imaging of Overlay and Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements : AM: Advanced Metrology by Mehendale, M., Antonelli, A., Mair, R., Mukundhan, P., Bogdanowicz, J., Charley, A.L., Leray, P., Yasin, F., Crotti, D.

    “…Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic…”
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    Conference Proceeding
  11. 11

    Optimal laser positioning for laser-assisted atom probe tomography by Koelling, S., Innocenti, N., Bogdanowicz, J., Vandervorst, W.

    Published in Ultramicroscopy (01-09-2013)
    “…Laser-assisted atom probe tomography is a material analysis method based on field evaporating ions from a tip-shaped sample by a combination of a standing…”
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    Journal Article
  12. 12

    Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy by Nuytten, T., Bogdanowicz, J., Witters, L., Eneman, G., Hantschel, T., Schulze, A., Favia, P., Bender, H., De Wolf, I., Vandervorst, W.

    Published in APL materials (01-05-2018)
    “…The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process…”
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    Journal Article
  13. 13

    Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics by Mehendale, M., Kotelyanskii, M., Mair, R., Mukundhan, P., Bogdanowicz, J., Teugels, L., Charley, A.L., Kuszewski, P.

    “…Characterization of patterned nanostructures in modern nanoelectronic memory and logic devices using traditional optical critical dimension (OCD) metrology…”
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    Conference Proceeding
  14. 14

    On the analysis of the activation mechanisms of sub-melt laser anneals by Clarysse, T., Bogdanowicz, J., Goossens, J., Moussa, A., Rosseel, E., Vandervorst, W., Petersen, D.H., Lin, R., Nielsen, P.F., Hansen, Ole, Merklin, G., Bennett, N.S., Cowern, N.E.B.

    “…In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt…”
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    Journal Article
  15. 15

    Subtelomeric rearrangements in Polish subjects with intellectual disability and dysmorphic features by Bogdanowicz, J., Pawłowska, B., Ilnicka, A., Gawlik-Zawiślak, S., Jóźwiak, A., Sobiczewska, B., Zdzienicka, E., Korniszewski, L., Zaremba, J.

    Published in Journal of applied genetics (01-01-2010)
    “…Fluorescent in situ hybridization (FISH) was performed in 76 patients referred to our department because of intellectual disability and dysmorphic features…”
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    Journal Article
  16. 16

    Inspection and metrology challenges for 3 nm node devices and beyond by Shohjoh, T., Ikota, M., Isawa, M., Lorusso, G. F., Horiguchi, N., Briggs, B., Mertens, H., Bogdanowicz, J., De Bisschop, P., Charley, A.-L.

    “…We report on non-destructive inspection and metrology potential of high-voltage (HV) critical dimension scanning electron microscopy (CD-SEM) for 3 nm node…”
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    Conference Proceeding
  17. 17

    Identification, characterization and purification of the lantibiotic staphylococcin T, a natural gallidermin variant by Furmanek, B., Kaczorowski, T., Bugalski, R., Bielawski, K., Bogdanowicz, J., Podhajska, AnD. A. J.

    Published in Journal of applied microbiology (01-12-1999)
    “…B. FURMANEK, T. KACZOROWSKI, R. BUGALSKI, K. BIELAWSKI, J. BOGDANOWICZ and A.J. PODHAJSKA.1999.Staphylococcin T (StT), an antibacterial agent produced by a…”
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    Journal Article
  18. 18

    Dopant, composition and carrier profiling for 3D structures by Vandervorst, W., Fleischmann, C., Bogdanowicz, J., Franquet, A., Celano, U., Paredis, K., Budrevich, A.

    “…With the transition from planar to three-dimensional device architectures, devices such as FinFETs, TFETs and nanowires etc. become omnipresent. This requires…”
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    Journal Article
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    Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives by Barnes, J.P., Grenier, A., Mouton, I., Barraud, S., Audoit, G., Bogdanowicz, J., Fleischmann, C., Melkonyan, D., Vandervorst, W., Duguay, S., Rolland, N., Vurpillot, F., Blavette, D.

    Published in Scripta materialia (15-04-2018)
    “…Atom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in a semiconductor device with high sensitivity…”
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    Journal Article