Search Results - "Boeuf, F."
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DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator
Published in Optics express (01-04-2019)“…We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator…”
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2
Up to 300 K lasing with GeSn-On-Insulator microdisk resonators
Published in Optics express (31-01-2022)“…GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV…”
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3
Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect
Published in Optics express (14-11-2016)“…In this paper, a simplified model of silicon phase modulators is presented that enables favorable accuracy together with a substantial reduction in…”
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4
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Published in Applied physics letters (26-07-2004)“…We report on experiments on photoresponse to sub-THz (120GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at…”
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5
Clonal variation in interferon response determines the outcome of oncolytic virotherapy in mouse CT26 colon carcinoma model
Published in Gene therapy (01-01-2015)“…In our earlier studies, Semliki Forest virus vector VA7 completely eliminated type I interferon (IFN-I)-unresponsive human U87-luc glioma xenografts, whereas…”
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6
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
Published in Applied physics letters (18-12-2006)“…Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120 - 300 nm have been studied as room temperature plasma wave…”
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7
Germanium microlasers on metallic pedestals
Published in APL photonics (01-10-2018)“…Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility, tune the bandgap of heterostructures, or break lattice…”
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8
Tensile-strained germanium microdisks with circular Bragg reflectors
Published in Applied physics letters (29-02-2016)“…We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The microdisks with suspended…”
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28nm FDSOI technology platform for high-speed low-voltage digital applications
Published in 2012 Symposium on VLSI Technology (VLSIT) (01-06-2012)“…For the first time, a full platform using FDSOI technology is presented. This work demonstrates 32% and 84% speed boost at 1.0V and 0.6V respectively, without…”
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Conference Proceeding -
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Hybrid III-V/Silicon Quantum Photonic Device Generating Broadband Entangled Photon Pairs
Published in PRX quantum (01-11-2024)“…The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for…”
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11
Tensile-strained germanium microdisk electroluminescence
Published in Optics express (09-03-2015)“…We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride…”
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12
The end of CMOS scaling
Published in IEEE circuits and devices magazine (01-01-2005)Get full text
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13
Programmable insect cell carriers for systemic delivery of integrated cancer biotherapy
Published in Journal of controlled release (28-12-2015)“…Due to cancer's genetic complexity, significant advances in the treatment of metastatic disease will require sophisticated, multi-pronged therapeutic…”
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14
Analysis of the thermal impact of a bimetal on the dynamic behavior of a thermal energy harvester
Published in Sensors and actuators. A. Physical. (01-12-2015)“…•This paper proposes a theoretical dynamic thermal modelling of a thermal energy harvester strengthened by experimental measurements.•The model allows the…”
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15
Schottky electroluminescent diodes with n-doped germanium
Published in Applied physics letters (16-06-2014)“…n-doped germanium can be used as an active material for the realization of an optical source under electrical pumping. We propose to use Schottky contacts for…”
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16
Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire
Published in Solid-state electronics (01-10-2014)“…•Implementation of a Poisson–Schrödinger solver for Si and III–V nanowires.•Quantum confinement is modeled by generalizing Hänsch’s formula.•A model for the…”
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17
Flexible bimetal and piezoelectric based thermal to electrical energy converters
Published in Sensors and actuators. A. Physical. (01-08-2014)“…•A new technology for thermal to electrical conversion is proposed.•The devices rely on snapping bimetals and piezoelectrics.•Thin matrix devices working…”
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18
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
Published in IEEE circuits and devices magazine (01-01-2005)“…The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as seen in the new 2003 International Technology Roadmap for…”
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19
First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers
Published in 2016 IEEE Symposium on VLSI Technology (01-06-2016)“…For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI…”
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Conference Proceeding -
20
Coupling of a bimetallic strip heat engine with a piezoelectric transducer for thermal energy harvesting
Published in Molecular Crystals and Liquid Crystals (23-03-2016)“…The field of energy harvesting became attractive due to the development of wireless sensors networks. Consequently many systems emerged to harvest wasted…”
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