Search Results - "Boeck, Bruce"

Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM by Gerritsen, Eric, Emonet, Nicolas, Caillat, Christian, Jourdan, Nicolas, Piazza, Marc, Fraboulet, David, Boeck, Bruce, Berthelot, Audrey, Smith, Steven, Mazoyer, Pascale

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Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM by Gerritsen, Eric, Emonet, Nicolas, Caillat, Christian, Jourdan, Nicolas, Piazza, Marc, Fraboulet, David, Boeck, Bruce, Berthelot, Audrey, Smith, Steven, Mazoyer, Pascale

“…The architecture, materials choice and process technology for stacked-capacitors in embedded-DRAM applications are a crucial concern for each new technology…”
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A cobalt salicide CMOS process with TiN-strapped polysilicon gates by Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

“…A submicrometer CMOS technology with MOSFET structures consisting of a TiN-strapped polysilicon gate electrode and self-aligned cobalt silicided source/drain…”
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An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process by Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E.O., Gunderson, C.D.

“…An advanced 0.5- mu m CMOS technology which features disposable TiN spacers to define both lightly doped drain (LDD) implantation and self-aligned silicided…”
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A TiN strapped polysilicon gate cobalt salicide CMOS process by Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

“…A novel TiN strapped polysilicon gate cobalt salicide process has been developed for a submicron CMOS technology. The resulting MOSFET structure consists of a…”
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