Search Results - "Bockelman, D"

Combined differential and common-mode scattering parameters: theory and simulation by Bockelman, D.E., Eisenstadt, W.R.

“…A theory for combined differential and common-mode normalized power waves is developed in terms of even and odd mode impedances and propagation constants for a…”
Get full text

Pure-mode network analyzer for on-wafer measurements of mixed-mode S-parameters of differential circuits by Bockelman, D.E., Eisenstadt, W.R.

“…A practical measurement system is introduced for measurement of combined differential and common-mode (mixed-mode) scattering parameters, and its operation is…”
Get full text

Accuracy estimation of mixed-mode scattering parameter measurements by Bockelman, D.E., Eisenstadt, W.R., Stengel, R.

“…The pure-mode vector network analyzer (PMVNA) provides direct measurement of differential circuits. Residual error models are derived for the PMVNA and a…”
Get full text

IREM usage in the detection of highly resistive failures on 65nm products by Ifar Wan, Bockelman, D., Yun Xuan, Chen, S.

“…Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where "abnormal" photon/thermal emissions are…”
Get full text

Direct measurement of crosstalk between integrated differential circuits by Bockelman, D.E., Eisenstadt, W.R.

“…Silicon integrated-circuit test structures have been fabricated that allow direct measurement of crosstalk between differential transmission lines and between…”
Get full text

Calibration and verification of the pure-mode vector network analyzer by Bockelman, D.E., Eisenstadt, W.R.

“…In this paper, the calibration of a pure-mode vector network analyzer (PMVNA) is presented in detail. The analyzer is intended for the measurement of…”
Get full text

Combined differential and common-mode analysis of power splitters and combiners by Bockelman, D.E., Eisenstadt, W.R.

“…Power splitter/combiner phase and magnitude imbalance is analyzed in terms of simultaneous orthogonal modes of propagation. These simultaneous modes are…”
Get full text

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies by Taft, R.C., Lage, C.S., Hayden, J.D., Kirsch, H.C., Lin, J.-H., Denning, D.J., Shapiro, F.B., Bockelman, D.E., Camilleri, N.

“…We present the process development and device characterization of the Selectively Compensated Collector (SCC) BJT specifically designed for high-density…”
Get full text

Very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 mu m high-density BiCMOS SRAM technology by Taft, R C, Lin, J-H, Shapiro, F, Bockelman, D, Camilleri, N

“…This article presents RF and CML performance of a bipolar device integrated into a high-density 0.35 mu m BiCMOS technology specifically designed for fast…”
Get full text

Implementation of a Multidisciplinary “Code Hip” Protocol is Associated with Decreased Time to Surgery and Improved Patient Outcomes by VanTienderen, Richard J., Bockelman, Kyle, Khalifa, Rami, Reich, Michael S., Adler, Adam, Nguyen, Mai P.

“…Background: The purpose of this study is to report outcomes data based on the implementation of a “Code Hip” protocol, a multidisciplinary approach to the care…”
Get full text

Common and differential crosstalk characterization on the silicon substrate by Eisenstadr, W.R., Bockelman, D.E.

“…Integrated circuit pad-to-pad crosstalk characterization structures were fabricated and measured over a 8000 μm×2500 μm area using Al pads on a silicon…”
Get full text

Infrared Ray Emission (IREM) Based Post-Silicon Power Debug Flows Developed for Chip Power Performance by Chen, Y.-C.S., Lu, D., Bockelman, D., Ma, M., Wan, I.

“…Pre-silicon power modeling, post-silicon power validation, and power debugs design efforts have significantly increased to meet speed performance, reliability…”
Get full text

Variance reduction using wafer patterns in I/sub ddQ/ data by Daasch, W.R., McNames, J., Bockelman, D., Cota, K.

“…The subject of this paper is I/sub ddQ/ testing for deep sub-micron CMOS technologies. The key concept introduced is the need to reduce the variance of good…”
Get full text

Design validation on multiple-core CPU supported low power states using platform based infrared emission microscopy (PIREM) technique by Chen, Yuan-Chuan Steven, Budka, D., Gibertini, A., Bockelman, D., Yutien Lin

“…An innovative post-silicon design validation methodology using recognized industry wide IREM imaging techniques in conjunction with full PC platform enablement…”
Get full text

Increasing the on-die nodal observability and controllability use of advanced design for debug circuit features by Chen, Y.-C.S., Bockelman, D.

“…A post-silicon design validation methodology using on-die clock design for debug (DFD) circuits working together with advanced optical silicon probing…”
Get full text

A very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 /spl mu/m high-density BiCMOS SRAM technology by Taft, R.C., Lin, J.-H., Shapiro, F., Bockelman, D., Camilleri, N.

“…This paper presented the bipolar RF and circuit characterization of a high-performance 0.35 /spl mu/m BICMOS technology specifically designed for fast SRAMs. A…”
Get full text