Search Results - "Bochkareva, I. I."

The Main Aspects of End-to-End Standardisation of Herbal Drugs, Herbal Drug Preparations, and Herbal Medicinal Products of Eucalyptus viminalis by Zilfikarov, I. N., Daironas, J. V., Bochkareva, I. I., Bochkarev, B. G.

“…The principle of consistent, end-to-end standardisation builds upon the fact that qualitative and quantitative analysis of bioactive compounds in herbal drugs,…”
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Members of the family Lamiaceae Lindl. as sources of medicinal plant raw materials to obtain neurotropic drugs by Zvezdina, Е. V., Dayronas, J. V., Bochkareva, I. I., Zilfikarov, I. N., Babaeva, E. Yu, Ferubko, E. V., Guseynova, Z. A., Serebryanaya, F. K., Kaibova, S. R., Ibragimov, T. A.

“…The aim of this work is to review and analyze the data published in the modern scientific literature obtained in pharmacological, pharmacognostic and…”
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Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes by Bochkareva, N. I., Rebane, Y. T., Shreter, Y. G.

“…A direct correlation between efficiency droop and broadening of emission spectrum of InGaN/GaN quantum wells (QWs) with increasing current density is found. A…”
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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well by Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Shreter, Y. G.

“…The current dependences of the spectral noise density and quantum efficiency in green and blue light-emitting diodes with InGaN/GaN quantum wells (QWs) are…”
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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

“…The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77–300 K. It is found that the efficiency droop is due to a…”
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Defect-Assisted Tunneling via Ni/n-GaN Schottky Barriers by Bochkareva, N. I., Shreter, Y. G.

“…Schottky barriers on GaN is considered on the basis of an analysis of the features of the current-voltage characteristics of Ni/ n -GaN diodes. It is found…”
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Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs by Efremov, A. A., Bochkareva, N. I., Gorbunov, R. I., Lavrinovich, D. A., Rebane, Yu. T., Tarkhin, D. V., Shreter, Yu. G.

“…The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive…”
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Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency by Bochkareva, N. I., Shreter, Y. G.

“…The deep-center-assisted tunneling of carriers in p–n structures of light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) makes smaller the effective…”
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Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen by Bochkareva, N. I., Sheremet, I. A., Shreter, Yu. G.

“…Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes…”
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Rare complications of acute pancreatitis: Clinical cases by Remizov, S. I., Andreev, A. V., Gabriel, S. A., Bochkareva, I. V., Perebeynos, A. N., Zasyadko, O. V.

“…Background . Acute pancreatitis is recognized as a common disease, occasionally accompanied by the development of local complications that require surgical…”
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Hopping conductivity and dielectric relaxation in Schottky barriers on GaN by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.

“…A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect…”
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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells by Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Tarala, V. A., Shreter, Yu. G.

“…It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150…”
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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire by Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.

“…The intense absorption of CO 2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by…”
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Oscillatory modes of adsorption in the seepage of multicomponent systems by Bochkareva, I.V., Kovaleva, L.A.

“…A system of equations describing the motion of multicomponent mixtures in a porous medium, taking into account the phenomena of competing adsorption is…”
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DEVELOPMENT AND DEPLOYMENT OF COMPUTER TUTORIALS IN EDUCATIONAL PROCESS OF PHYSICAL TRAINING IN HIGHER EDUCATION INSTITUTION by Svetlana I. Bochkareva, Tatyana P. Visotskaya, Olga P. Kokoulina

“…The article deals with the innovative activity of the physical education and sport departmentin the computer technology application in the educational process…”
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ICP etching of III-nitride based laser structure with Cl 2 –Ar plasma assisted by Si coverplate material by Zhirnov, Evgeny, Stepanov, Sergei, Gott, Alan, Wang, Wang Nang, Shreter, Y. G., Tarkhin, D. V., Bochkareva, N. I.

“…ICP etching of GaN, Al 0.1 Ga 0.9 N , and a laser diode (LD) structure with Cl 2 – Ar plasma assisted by Si coverplate material was systematically studied. The…”
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Two modes of HVPE growth of GaN and related macrodefects by Voronenkov, V. V, Bochkareva, N. I, Gorbunov, R. I, Latyshev, P. E, Lelikov, Y. S, Rebane, Y. T, Tsyuk, A. I, Zubrilov, A. S, Popp, U. W, Strafela, M, Strunk, H. P, Shreter, Y. G

“…Phys. Status Solidi C 10 (2013) 468-471 GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed:…”
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Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs by Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Shreter, Yu. G.

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Nonuniformity of carrier injection and the degradation of blue LEDs by Bochkareva, N. I., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Klochkov, A. V., Shreter, Yu. G.

“…The distribution of electroluminescence (EL) intensity over the area and in the course of time before and after the optical degradation of blue InGaN/GaN LEDs…”
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Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells by Bochkareva, N. I., Rebane, Y. T., Shreter, Y. G.

“…The phenomenon of the emission efficiency droop of InGaN/GaN quantum wells (QWs) in light-emitting diode p - n structures is studied. The influence exerted by…”
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