New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied surface morphology, boundary between phases in TiB/sub x/-n-InP contact and I-V curves of Au-TiB/sub x/-n-InP Schottky diodes made...

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Bibliographic Details

Published in:	2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) pp. 528 - 529
Main Authors:	Arsentiev, I.N., Bobyi, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Y.Y., Lytvyn, O.S., Milenin, V.V., Tarasov, I.S., Belyaev, A.E., Rusu, E.V.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2004
Subjects:	Epitaxial layers Indium phosphide Manufacturing Physics Schottky barriers Schottky diodes Semiconductor diodes Stress Substrates Surface morphology
Online Access:	Get full text
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