Search Results - "Bobrov, M.A."

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  1. 1

    Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE by Andryushkin, V.V., Blokhin, S.A., Babichev, A.V., Gladyshev, A.G., Karachinsky, L.Ya, Novikov, I.I., Blokhin, A.A., Bobrov, M.A., Maleev, N.A., Rochas, S.S., Voropaev, K.O., Zhumaeva, I.O., Ustinov, V.M., Egorov, A.Yu

    “…1300-nm vertical-cavity surface-emitting lasers (VCSELs) based on InGaAs/InGaAlAs superlattice active region and GaAs/AlGaAs distributed Bragg reflectors grown…”
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    Conference Proceeding
  2. 2

    1550-nm waveband VCSELs made by wafer-fusion technique by Rochas, S.S., Babichev, A.V., Blokhin, S.A., Gladyshev, A.G., Karachinsky, L.Ya, Novikov, I.I., Blokhin, A.A., Bobrov, M.A., Kuzmenkov, A.G., Maleev, N.A., Nevedomsky, N.A., Andryushkinl, V.V., Voropaev, K.O., Zhumaeva, I.O., Ustinov, V.M., Egorov, A.Yu, Bougrov, V.E.

    “…1550-nm VCSELs with an active region of ten compressive-strained InGaAs QW, separated by the InP lattice-matched InAlGaAs barrier layers and GaAs/AlGaAs…”
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    Conference Proceeding
  3. 3

    Chromoblastomycosis by Molochkov, V A, Khlebnikova, A N, Petrova, M S, Bobrov, M A

    Published in Arkhiv patologii (2020)
    “…The paper describes a case of chromoblastomycosis, a rare implantation mycosis in the Russian Federation. It gives data on the prevalence, etiology, and…”
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    Journal Article
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    Microdisk injection lasers for the 1.27-µm spectral range by Kryzhanovskaya, N.V, Maximov, M.V, Blokhin, S.A, Bobrov, M.A, Kulagina, M.M, Troshkov, S.I, Zadiranov, Yu. M, Lipovskii, A.A, Moiseev, E.I, Kudashova, Yu.V, Livshits, D.A, Ustinov, V.M, Zhukov, A.E

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2016)
    “…Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 µm and an active region based on InAs/InGaAs quantum dots, are fabricated. The…”
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    Journal Article
  6. 6
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    Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors by Maleev, N. A., Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., Ustinov, V. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2017)
    “…The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder…”
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    Journal Article
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  10. 10

    Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture by Bobrov, M. A., Blokhin, S. A., Kuzmenkov, A. G., Maleev, N. A., Blokhin, A. A., Zadiranov, Yu. M., Nikitina, E. V., Ustinov, V. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2014)
    “…The effect of the photon lifetime in an optical microcavity on the characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with fully doped…”
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    Journal Article
  11. 11

    Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR by Maleev, N. A., Kuz’menkov, A. G., Kulagina, M. M., Zadiranov, Yu. M., Vasil’ev, A. P., Blokhin, S. A., Shulenkov, A. S., Troshkov, S. I., Gladyshev, A. G., Nadtochiy, A. M., Pavlov, M. M., Bobrov, M. A., Nazaruk, D. E., Ustinov, V. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2013)
    “…Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector…”
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    Journal Article
  12. 12

    Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning by Maleev, N. A., Blokhin, S. A., Bobrov, M. A., Kuzmenkov, A. G., Blokhin, A. A., Moser, P., Lott, J. A., Bimberg, D., Ustinov, V. M.

    Published in Semiconductors (Woodbury, N.Y.) (2015)
    “…The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity…”
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    Journal Article
  13. 13

    Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission by Blokhin, S. A., Karachinsky, L. Ya, Novikov, I. I., Payusov, A. S., Nadtochiy, A. M., Bobrov, M. A., Kuzmenkov, A. G., Maleev, N. A., Ledentsov, N. N., Ustinov, V. M., Bimberg, D.

    Published in Semiconductors (Woodbury, N.Y.) (2014)
    “…Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections…”
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    Journal Article
  14. 14

    Noise performance of 89Xnm single-mode VCSELs by Bobrov, M.A., Blokhin, S.A., Kovach, Ya.N., Blokhin, A.A., Maleev, N.A., Kuzmenkov, A.G., Zadiranov, Yu.M., Kulagina, M.M., Guseva, Yu.A., Vasil'Ev, A.P., Marchii, M.N., Ustinov, V.M.

    “…The study of the noise characteristics of the 89X nm single-mode polarization-stable VCSELs based on InGaAs quantum wells is presented. When VCSEL emission is…”
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    Conference Proceeding
  15. 15

    Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers by Blokhin, S. A., Bobrov, M. A., Maleev, N. A., Kuzmenkov, A. G., Stetsenko, V. V., Pavlov, M. M., Karachinsky, L. Ya, Novikov, I. I., Zadiranov, Yu. M., Egorov, A. Yu, Ustinov, V. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2013)
    “…The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the…”
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    Journal Article
  16. 16

    Excitonic spectrum of the ZnO/ZnMgO quantum wells by Bobrov, M. A., Toropov, A. A., Ivanov, S. V., El-Shaer, A., Bakin, A., Waag, A.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2011)
    “…Excitonic spectrum of the wurtzite ZnO/Zn 1 − x Mg x O quantum wells with a width on the order of or larger than the Bohr radius of the exciton has been…”
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    Journal Article