Search Results - "Boboev, A. Y."

Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions by Zainabidinov, S. Z., Utamuradova, Sh. B., Boboev, A. Y.

“…Films of substitutional solid solutions (ZnSe) 1 –  x  –  y (Ge 2 ) x (GaAs 1 – δ Bi δ ) y (where 0 ≤ x ≤ 0.725 and 0 ≤ y ≤ 0.638) with various nanoinclusions…”
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Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots by Zainabidinov, S. Z., Saidov, A. S., Boboev, A. Y., Usmonov, J. N.

“…—(GaAs) 1 –  x  –  у (Ge 2 ) x (ZnSe) y films with ZnSe quantum dots by the liquid-phase epitaxy method are grown for the first time. The grown layers had p-…”
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Photoelectric Properties of n-ZnO/p-Si Heterostructures by Zainabidinov, S. Z., Boboev, A. Y., Makhmudov, Kh. A., Abduazimov, V. A.

“…— The synthesis of a ZnO metal oxide film on the surface of KDB-20 silicon was carried out. It was determined that the crystallographic direction of the used…”
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Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review) by Zainabidinov, S. Z., Saidov, A. S., Kalanov, M. U., Boboev, A. Y.

“…A review of experimental and theoretical studies on technology for producing the single-crystal substitutional solid solution of p- (GaAs) 1 –  x  –  y (Ge 2 )…”
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Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films by Zaynabidinov, S. Z., Saidov, A. S., Leiderman, A. Yu, Kalanov, M. U., Usmonov, Sh. N., Rustamova, V. M., Boboev, A. Y.

“…The possibility of growing the (GaAs) 1– x – y (Ge 2 ) x (ZnSe) y alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is…”
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Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots by Saidov, A. S., Zainabidinov, S. Z., Kalanov, M. U., Boboev, A. Y., Kutlimurotov, B. R.

“…The spectral photosensitivity of n (GaAs)- p (GaAs) 1– x – y (ZnSe) x (Ge 2 ) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The…”
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Peculiarities of photosensitivity of n(GaAs)-p(GaAs) sub(1-x-y) (ZnSe) x (Ge sub(2)) y structures with quantum dots by Saidov, A S, Zainabidinov, S Z, Kalanov, MU, Boboev, A Y, Kutlimurotov, B R

“…The spectral photosensitivity of n(GaAs)-p(GaAs) sub(1-x-y) (ZnSe) x (Ge sub(2)) y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied…”
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Growth, structure, and properties of GaAs-based [.sub.y] epitaxial films by Zaynabidinov, S.Z, Saidov, A.S, Leiderman, A.Yu, Kalanov, M.U, Usmonov, Sh.N, Rustamova, V.M, Boboev, A.Y

“…The possibility of growing the [(GaAs).sub.1-x-y][([Ge.sub.2]).sub.x][(ZnSe).sub.y] alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin…”
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