Search Results - "Bobela, D. C."

Reduced light-induced degradation in a-Si:H: The role of network nanostructure by Stradins, P., Bobela, D. C., Branz, H. M.

“…In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) effect in device quality a-Si:H that has been post-deposition…”
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Quadrupole and chemical shift interactions in crystalline and amorphous chalcogenides by Bobela, D C, Taylor, P Craig

“…This paper reviews the general features of magnetic resonance spectra specific to the amorphous chalcogenide materials. We discuss the dominant interactions…”
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Close Packing of Nitroxide Radicals in Stable Organic Radical Polymeric Materials by Bobela, David C, Hughes, Barbara K, Braunecker, Wade A, Kemper, Travis W, Larsen, Ross E, Gennett, Thomas

“…The relationship between the polymer network and electronic transport properties for stable radical polymeric materials has come under investigation owing to…”
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Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon by Bobela, David C., Branz, Howard M., Stradins, Paul

“…We observe a dramatic reduction in the Staebler-Wronski metastable defect creation efficiency in device-quality films of hydrogenated amorphous silicon after…”
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Surface Hydride Composition of Plasma-Synthesized Si Nanoparticles by Jariwala, Bhavin N, Kramer, Nicolaas J, Petcu, M. Cristina, Bobela, David C, Sanden, M. C. M. van de, Stradins, Paul, Ciobanu, Cristian V, Agarwal, Sumit

“…We have determined the surface hydride composition of amorphous and crystalline Si nanoparticles (NPs) (3–5 nm) synthesized in a low-temperature SiH4/Ar plasma…”
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The Relation Between the Bandgap and the Anisotropic Nature of Hydrogenated Amorphous Silicon by Smets, A. H. M., Wank, M. A., Vet, B., Fischer, M., van Swaaij, R. A. C. M. M., Zeman, M., Bobela, D. C., Wronski, C. R., van de Sanden, R. M. C. M.

“…The bandgap of hydrogenated amorphous silicon (a-Si:H) is studied using a unique set of a-Si:H films deposited by means of three different processing…”
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H 1 NMR electron-nuclear cross relaxation in thin films of hydrogenated amorphous silicon by Su, Tining, Taylor, P. C., Ganguly, G., Carlson, D. E., Bobela, D. C., Hari, P.

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Device Physics of Heteroepitaxial Film c-Si Heterojunction Solar Cells by Grover, S., Teplin, C. W., Li, J. V., Bobela, D. C., Bornstein, J., Schroeter, P., Johnston, S., Guthrey, H., Stradins, P., Branz, H. M., Young, D. L.

“…We characterize heterojunction solar cells made from single-crystal silicon films grown heteroepitaxially using hot-wire chemical vapor deposition (HWCVD)…”
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Epitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute by Bobela, D. C., Teplin, C. W., Young, D. L., Branz, H. M., Stradins, P.

“…We have grown device-quality epitaxial silicon thin films at growth rates up to 1.85 μm/min, using hot-wire chemical vapor deposition from silane, at substrate…”
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The relation between the band gap and the anisotropic nature of hydrogenated amorphous silicon by Smets, A. H. M., Wank, M. A., Vet, B., Fischer, M., van Swaaij, R. A. C. M. M., Zeman, M., Bobela, D. C., Wronski, C. R., van de Sanden, M. C. M.

“…The network and nature of hydrogenated amorphous silicon (a-Si:H) are conventionally interpreted in terms of a continuous random network (CRN) of Si-Si bonds,…”
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{sup 1}H NMR electron-nuclear cross relaxation in thin films of hydrogenated amorphous silicon by Su Tining, Taylor, P. C., Ganguly, G., Carlson, D. E., Bobela, D. C., Hari, P., BP Solar, Toano, Virginia 23168, Department of Physics, University of Utah, Salt Lake City, Utah 84112, Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104

“…We investigate the spin-lattice relaxation of the dipolar order in {sup 1}H NMR in hydrogenated amorphous silicon (a-Si:H). We find that the relaxation is…”
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