Search Results - "Bobard, F."
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Microstructure at submicron scale of the white layer produced by EDM technique
Published in Journal of materials processing technology (10-06-2004)“…Electro-discharge machining (EDM) technique is widely used for machining hard metals and for performing specific tasks which cannot be achieved using…”
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Geometrical, functional, and histomorphometric adaptation of rat carotid artery in induced hypertension
Published in Journal of biomechanics (01-05-2003)“…Acute and long-term (up to 56 days) evolution of geometry, structural properties, vascular smooth muscle (VSM) tone and histomorphometric properties of the rat…”
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Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide
Published in IEEE journal of quantum electronics (01-08-2001)“…We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mu m. The dots are grown by…”
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Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays
Published in IEEE photonics technology letters (01-01-1997)“…Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength…”
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5
Microstructure at submicron scale of the white layer produced by EDM technique
Published in Journal of materials processing technology (10-06-2004)“…Electro-discharge machining (EDM) technique is widely used for machining hard metals and for performing specific tasks which cannot be achieved using…”
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Journal Article -
6
Photoluminescence and electroluminescence of high-density GaAs quantum wires arrays
Published in Il nuovo cimento della Società italiana di fisica. Sezione D (01-11-1995)Get full text
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7
Structural and electrooptical characteristics of quantum dots emitting at 1.3 [mu]m on gallium arsenide
Published in IEEE journal of quantum electronics (01-08-2001)Get full text
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Structural and electrooptical characteristics of quantum dots emitting at 1.3 /spl mu/m on gallium arsenide
Published in IEEE journal of quantum electronics (01-08-2001)“…We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 /spl mu/m. The dots are grown by…”
Get full text
Journal Article -
9
Structural and electrooptical characteristics of quantum dots emitting at 1.3 mum on gallium arsenide
Published in IEEE journal of quantum electronics (01-08-2001)“…We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by…”
Get full text
Journal Article -
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Design, fabrication, and characterization of the double-barrier, reservoir, and quantum well electron tranfer modulator
Published in Summaries of papers presented at the Conference on Lasers and Electro-Optics (1996)“…Summary form only given. We present data of an enhanced version of the BRAQWET, where an additional 70-/spl Aring/ InP barrier layer has been added between the…”
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