Search Results - "Blumer, Zak H"

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  1. 1

    Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices by Boyer, Jacob T, Blumer, Ari N, Blumer, Zak H, Lepkowski, Daniel L, Grassman, Tyler J

    Published in Crystal growth & design (07-10-2020)
    “…The novel use of a GaAs y P1–y /GaP compressively strained superlattice (CSS) to provide enhanced control over misfit dislocation (MD) evolution and threading…”
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    Journal Article
  2. 2

    Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy by Blumer, Zak H., Boyer, Jacob T., Blumer, Ari N., Lepkowski, Daniel L., Grassman, Tyler J.

    Published in Applied physics letters (21-09-2020)
    “…The growth of BxGa1−xP alloys by hybrid solid/gas-source molecular beam epitaxy, with B supplied via the BCl3 gas precursor, is demonstrated. Compositional…”
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    Journal Article
  3. 3

    Exploring Multiple Pathways to Low TDD GaP/Si for III-V/Si Photovoltaics by Boyer, Jacob T., Blumer, Zak H., Lepkowski, Daniel L., Ringel, Steven A., Grassman, Tyler J.

    “…Threading dislocation density (TDD) is a key parameter that commonly limits the performance of epitaxially integrated III-V/Si photovoltaics. The GaP/Si…”
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    Conference Proceeding
  4. 4

    Recent Advances in GaAsP/Si Top Cell Enabling 27% Tandem Efficiency by Lepkowski, Daniel L., Kasher, Tal, Boyer, Jacob T., Blumer, Zak H., Yi, Chuqi, Juhl, Mattias K., Soeriyadi, Anastasia H., Mehrvarz, Hamid, Romer, Udo, Ho-Baillie, Anita, Bremner, Stephen P., Ringel, Steven A., Grassman, Tyler J.

    “…Historically, the performance of monolithically-integrated GaAsP/Si tandem solar cells has been limited by the presence of elevated TDD in the GaAsP subcell…”
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    Conference Proceeding
  5. 5

    Si-matched B x Ga1− x P grown via hybrid solid- and gas-source molecular beam epitaxy by Blumer, Zak H., Boyer, Jacob T., Blumer, Ari N., Lepkowski, Daniel L., Grassman, Tyler J.

    Published in Applied physics letters (21-09-2020)
    “…The growth of BxGa1−xP alloys by hybrid solid/gas-source molecular beam epitaxy, with B supplied via the BCl3 gas precursor, is demonstrated. Compositional…”
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    Journal Article
  6. 6

    Development of Low-TDD GaAsyP1-y/GaP/Si Metamorphic Materials for High-Efficiency III-V/Si Photovoltaics by Boyer, Jacob T., Blumer, Ari N., Blumer, Zak H., Rodriguez, Francisco A., Lepkowski, Daniel L., Ringel, Steven A., Grassman, Tyler J.

    “…Metamorphic III-V/Si materials with low threading dislocation density (TDD) are critical to realizing high-efficiency III-V/Si multijunction photovoltaics. In…”
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    Conference Proceeding
  7. 7