Search Results - "Bloshkin, A. A."

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  1. 1

    Phonon bottleneck in p -type Ge/Si quantum dots by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

    Published in Applied physics letters (23-11-2015)
    “…We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type…”
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  2. 2

    Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons by Yakimov, A I, Kirienko, V V, Bloshkin, A A, Armbrister, V A, Dvurechenskii, A V, Hartmann, J-M

    Published in Optics express (16-10-2017)
    “…We report the fabrication and characterization of a multilayer Ge quantum dot detector grown on Si xGex virtual substrate (x = 0.18) for photovoltaic mid-wave…”
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  3. 3

    Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range by Yakimov, A. I., Bloshkin, A. A., Dvurechenskii, A. V.

    Published in JETP letters (01-09-2019)
    “…The enhancement of the electric field in plasmonic nanostructures on a Si substrate in the near-infrared range is studied theoretically. Two-dimensional square…”
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  4. 4

    Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal by Yakimov, A. I., Bloshkin, A. A., Kirienko, V. V., Dvurechenskii, A. V., Utkin, D. E.

    Published in JETP letters (01-04-2021)
    “…It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase…”
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  5. 5

    Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays by Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Dvurechenskii, A. V., Utkin, D. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2021)
    “…Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their…”
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  6. 6

    Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays by Yakimov, Andrew I., Kirienko, Victor V., Bloshkin, Aleksei A., Utkin, Dmitrii E., Dvurechenskii, Anatoly V.

    Published in Photonics (01-07-2023)
    “…We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The…”
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  7. 7

    Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region by Bloshkin, A. A., Yakimov, A. I., Dvurechenskii, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2019)
    “…The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of…”
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  8. 8

    Localization of electrons in dome-shaped GeSi/Si islands by Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., Dvurechenskii, A. V.

    Published in Applied physics letters (19-01-2015)
    “…We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n+-type bottom and top Si layers. An in-plane…”
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  9. 9

    Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays by Yakimov, Andrew I., Kirienko, Victor V., Bloshkin, Aleksei A., Utkin, Dmitrii E., Dvurechenskii, Anatoly V.

    Published in Nanomaterials (Basel, Switzerland) (04-09-2021)
    “…Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent…”
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  10. 10

    Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots by Abramkin, Demid S, Petrushkov, Mikhail O, Bogomolov, Dmitrii B, Emelyanov, Eugeny A, Yesin, Mikhail Yu, Vasev, Andrey V, Bloshkin, Alexey A, Koptev, Eugeny S, Putyato, Mikhail A, Atuchin, Victor V, Preobrazhenskii, Valery V

    Published in Nanomaterials (Basel, Switzerland) (28-02-2023)
    “…In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental…”
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  11. 11

    Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks by Zinovyev, Vladimir A., Smagina, Zhanna V., Zinovieva, Aigul F., Bloshkin, Aleksei A., Dvurechenskii, Anatoly V., Rodyakina, Ekaterina E., Stepikhova, Margarita V., Peretokin, Artem V., Novikov, Alexey V.

    Published in Nanomaterials (Basel, Switzerland) (25-08-2023)
    “…The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si…”
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  12. 12

    Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots by Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A., Dvurechenskii, A. V.

    “…The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such…”
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  13. 13

    Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection by Yakimov, A.I., Bloshkin, A.A., Dvurechenskii, A.V.

    Published in Photonics and nanostructures (01-07-2020)
    “…•The near-infrared photodetection in Si-based heterostructures is enhanced by metallic nanohole arrays.•The maximum plasmonic enhancement is reached when the…”
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  14. 14

    Valence-band offsets in strained SiGeSn/Si layers with different tin contents by Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., Murashov, V. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2017)
    “…Admittance spectroscopy is used to study hole states in Si 0.7– y Ge 0.3 Sn y /Si quantum wells in the tin content range y = 0.04–0.1. It is found that the…”
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    Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

    “…We report on intraband photocurrent spectroscopy of sixfold stacked Ge/Si quantum dots embedded in a Si matrix and aligned along the growth direction. The dots…”
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  17. 17

    Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures by Vyacheslav A. Timofeev, Alexandr I. Nikiforov, Artur R. Tuktamyshev, Aleksey A. Bloshkin, Vladimir I. Mashanov, Sergey A. Teys, Ivan D. Loshkarev, Natalia A. Baidakova

    Published in Modern electronic materials (01-06-2017)
    “…This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn…”
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  18. 18

    Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

    Published in Applied physics letters (23-04-2018)
    “…The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually…”
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    Interlevel optical transitions in Si/GexSi1−x/Si quantum wells by Bloshkin, A. A.

    “…Results of mathematical simulation of the hole spectrum and optical absorption in Si/Ge x Si 1− x /Si quantum wells formed on virtual Ge y Si 1− y substrates…”
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