Search Results - "Bloshkin, A. A."
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Phonon bottleneck in p -type Ge/Si quantum dots
Published in Applied physics letters (23-11-2015)“…We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type…”
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Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons
Published in Optics express (16-10-2017)“…We report the fabrication and characterization of a multilayer Ge quantum dot detector grown on Si xGex virtual substrate (x = 0.18) for photovoltaic mid-wave…”
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Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range
Published in JETP letters (01-09-2019)“…The enhancement of the electric field in plasmonic nanostructures on a Si substrate in the near-infrared range is studied theoretically. Two-dimensional square…”
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Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal
Published in JETP letters (01-04-2021)“…It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase…”
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Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays
Published in Semiconductors (Woodbury, N.Y.) (01-08-2021)“…Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their…”
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Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays
Published in Photonics (01-07-2023)“…We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The…”
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Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region
Published in Semiconductors (Woodbury, N.Y.) (01-02-2019)“…The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of…”
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Localization of electrons in dome-shaped GeSi/Si islands
Published in Applied physics letters (19-01-2015)“…We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n+-type bottom and top Si layers. An in-plane…”
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Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays
Published in Nanomaterials (Basel, Switzerland) (04-09-2021)“…Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent…”
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Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots
Published in Nanomaterials (Basel, Switzerland) (28-02-2023)“…In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental…”
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Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks
Published in Nanomaterials (Basel, Switzerland) (25-08-2023)“…The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si…”
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Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots
Published in Surface investigation, x-ray, synchrotron and neutron techniques (2018)“…The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such…”
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Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection
Published in Photonics and nanostructures (01-07-2020)“…•The near-infrared photodetection in Si-based heterostructures is enhanced by metallic nanohole arrays.•The maximum plasmonic enhancement is reached when the…”
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Valence-band offsets in strained SiGeSn/Si layers with different tin contents
Published in Semiconductors (Woodbury, N.Y.) (01-03-2017)“…Admittance spectroscopy is used to study hole states in Si 0.7– y Ge 0.3 Sn y /Si quantum wells in the tin content range y = 0.04–0.1. It is found that the…”
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Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy
Published in Physical review. B, Condensed matter and materials physics (22-07-2014)“…We report on intraband photocurrent spectroscopy of sixfold stacked Ge/Si quantum dots embedded in a Si matrix and aligned along the growth direction. The dots…”
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Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
Published in Modern electronic materials (01-06-2017)“…This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn…”
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Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface
Published in Applied physics letters (23-04-2018)“…The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually…”
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Phononless hopping conduction in two-dimensional layers of quantum dots
Published in JETP letters (01-01-2003)Get full text
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Interlevel optical transitions in Si/GexSi1−x/Si quantum wells
Published in Optoelectronics, instrumentation, and data processing (01-05-2014)“…Results of mathematical simulation of the hole spectrum and optical absorption in Si/Ge x Si 1− x /Si quantum wells formed on virtual Ge y Si 1− y substrates…”
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