Search Results - "Block, T.R."

The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers by Yeong-Chang Chou, Lai, R., Block, T.R., Sharma, A., Kan, Q., Leung, D.L., Eng, D., Oki, A.

“…This paper describes RF-driven gate current effects on the dc/RF performance of 0.15-/spl mu/m (gate length) 2-mil (substrate thickness) GaAs pseudomorphic…”
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Ultrahigh-efficiency power amplifier for space radar applications by Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.

“…This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology…”
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A DC-20-GHz InP HBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver applications by Kobayashi, K.W., Desrosiers, R.M., Gutierrez-Aitken, A., Cowles, J.C., Tang, B., Tran, L.T., Block, T.R., Oki, A.K., Streit, D.C.

“…This paper reports on a dc-20-GHz InP heterojunction bipolar transistor (HBT) active mixer, which obtains the highest gain-bandwidth product (GBP) thus far…”
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A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth by Kobayashi, K.W., Oki, A.K., Tran, L.T., Cowles, J.C., Gutierrez-Aitken, A., Yamada, F., Block, T.R., Streit, D.C.

“…This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC)…”
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The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications by Chou, Y.C., Lee, L.J., Yang, J.M., Lange, M.D., Nam, P.S., Lin, C.H., Quach, H., Gutierrez, A.L., Barsky, M.E., Wojtowicz, M., Oki, A.K., Block, T.R., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

“…Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance…”
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A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications by Kobayashi, K.W., Cowles, J.C., Tran, L.T., Gutierrez-Aitken, A., Nishimoto, M., Elliott, J.H., Block, T.R., Oki, A.K., Streit, D.C.

“…This paper reports on what is believed to be the highest IP3/P/sub dc/ power linearity figure of merit achieved from a monolithic microwave integrated circuit…”
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Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology by Wang, Huei, Kwo Wei Chang, Tran, L.T., Cowles, J.C., Block, T.R., Lin, E.W., Dow, G.S., Oki, A.K., Streit, D.C., Allen, B.R.

“…A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC)…”
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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax by Wojtowicz, M., Lai, R., Streit, D.C., Ng, G.I., Block, T.R., Tan, K.L., Liu, P.H., Freudenthal, A.K., Dia, R.M.

“…We report here 305 GHz f T , 340 GHz f max , and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x…”
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Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs by Wojtowicz, M., Pascua, D., Han, A.-C., Block, T.R., Streit, D.C.

“…We compare the experimental and theoretical photoluminescence (PL) spectra of power and low-noise pseudomorphic AlGaAs InGaAs high electron mobility transistor…”
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MBE growth of quaternary InGaAlAs layers in [formula omitted] HBTs to improve device performance by Block, T.R., Cowles, J., Tran, L., Wojtowicz, M., Oki, A.K., Streit, D.C.

“…InAlAs InGaAs HBTs grown on InP substrates can achieve excellent high-frequency performance but suffer from low breakdown and low current gain due to the small…”
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A novel self-oscillating HEMT-HBT cascode VCO-mixer using an active tunable inductor by Kobayashi, K.W., Oki, A.K., Umemoto, D.K., Block, T.R., Streit, D.C.

“…Here we describe a unique Ka-band self-oscillating HEMT-HBT cascode mixer design which integrates an active tunable resonator circuit. The VCO-mixer MMIC…”
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Extending the bandwidth performance of heterojunction bipolar transistor-based distributed amplifiers by Kobayashi, K.W., Tran, L.T., Cowles, J.C., Block, T.R., Oki, A.K., Streit, D.C.

“…An InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) with a 2-30 GHz 1-dB bandwidth has been demonstrated which benchmarks the widest bandwidth reported for…”
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Carrier transport in partially relaxed In/sub 0.75/Ga/sub 0.25/As/InP high electron mobility structures by Sandhu, R., Hsing, R., Naidenkova, M., Goorsky, M.S., Chin, T.P., Wojtowicz, M., Block, T.R., Streit, D.C.

“…By increasing the thickness of the strained In/sub 0.75/Ga/sub 0.25/As channel above the critical thickness (with lattice matched InAlAs buffer and barrier…”
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A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasing by Kobayashi, K.W., Nishimoto, M., Tran, L.T., Wang, Huei, Cowles, J.C., Block, T.R., Elliott, J.H., Allen, B.R., Oki, A.K., Streit, D.C.

“…This paper will discuss the practical design of an InP-based heterojunction bipolar transistor (HBT) Q-band high IP3 monolithic microwave integrated circuit…”
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A novel monolithic HEMT LNA integrating HBT-tunable active-feedback linearization by selective MBE by Kobayashi, K.W., Streit, D.C., Oki, A.K., Umemoto, D.K., Block, T.R.

“…For the first time, a novel heterojunction bipolar transistor (HBT) active-feedback circuit is employed with a high electron mobility transistor (HEMT) low…”
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0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max by Wojtowicz, M., Lai, R., Streit, D.C., Ng, G.I., Block, T.R., Tan, K.L., Liu, P.H., Freudenthal, A.K., Dia, R.M.

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A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier by Kobayashi, K.W., Umemoto, D.K., Block, T.R., Oki, A.K., Streit, D.C.

“…We report on a 1-6 GHz HEMT-HBT three-stage variable gain amplifier (VGA), which is realized using selective molecular beam epitaxy (MBE). The VGA integrates…”
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An 18-21 GHz InP DHBT linear microwave Doherty amplifier by Kobayashi, K.W., Oki, A.K., Gutierrez-Aitken, A., Chin, P., Li Yang, Kaneshiro, E., Grossman, P.C., Sato, K., Block, T.R., Yen, H.C., Streit, D.C.

“…This work describes the first demonstration of an InP DHBT MMIC Doherty amplifier at K-band. When combined with InP DHBTs, the Doherty amplifier achieves a…”
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A 0.5-16 GHz capacitively coupled HBT medium power amplifier MMIC with active bias regulation by Kobayashi, K.W., Oki, A.K., Lammert, M., Gutierrez-Aitken, A., Kaneshiro, E., Grossman, P.C., Sato, K., Block, T.R., Streit, D.C.

“…This work describes a 0.5-16 GHz capacitively coupled HBT medium power distributed amplifier targeted for 10 Gb/s fiber-optic transmitter applications. The…”
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A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier by Kobayashi, K.W., Oki, A.K., Yang, L.W., Gutierrez-Aitken, A., Chin, P., Sawdai, D., Okamura, W., Lester, J., Kaneshiro, E., Gorssman, P.C., Sato, K., Block, T.R., Yen, H.C., Streit, D.C.

“…We report on the first InP DHBT K-band fully integrated power amplifier which achieves 0.5 Watts of output power and 40% power added efficiency (PAE). The…”
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