Search Results - "Bliss, D.F."

Hydrothermal growth and characterization of indium-doped-conducting ZnO crystals by Wang, Buguo, Callahan, M.J., Xu, Chunchuan, Bouthillette, L.O., Giles, N.C., Bliss, D.F.

“…Indium-doped-conducting ZnO crystals have been grown by the hydrothermal technique. The hydrothermal growth mechanism, as influenced by impurities,…”
Get full text

Ammonothermal growth of GaN crystals in alkaline solutions by Wang, Buguo, Callahan, M.J., Rakes, K.D., Bouthillette, L.O., Wang, S.-Q., Bliss, D.F., Kolis, J.W.

“…A method for the growth of GaN bulk crystals under ammonothermal conditions is described. Gallium nitride is shown to have a retrograde solubility in…”
Get full text

Modeling of gas phase and surface reactions in an aluminum nitride growth system by Cai, D., Zheng, L.L., Zhang, H., Tassev, V.L., Bliss, D.F.

“…This paper presents systematic study of an improved vapor-phase expitaxy system—a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D…”
Get full text

Aluminum nitride substrate growth by halide vapor transport epitaxy by Bliss, D.F., Tassev, V.L., Weyburne, D., Bailey, J.S.

“…High-quality AlN layers with thickness up to 50 μm have been grown by HVTE at growth rates up to 60 μm/h at deposition temperatures of 1000–1100°C in the…”
Get full text

The mechanism of growth-twin formation in zincblende crystals: new insights from a study of magnetic liquid encapsulated Czochralski-grown InP single crystals by Chung, H, Dudley, M, Larson, D.J, Hurle, D.T.J, Bliss, D.F, Prasad, V

“…Synchrotron white beam X-ray topography (SWBXT) [1, 2][M. Dudley, in: Mater Res. Soc. Symp. Proc., vol. 307, 1993, p. 213; Encyclopedia of Applied Physics,…”
Get full text

The influence of polarity on twinning in zincblende structure crystals: new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals by Dudley, M., Raghothamachar, B., Guo, Y., Huang, X.R., Chung, H., Hurle, D.T.J., Bliss, D.F.

“…The polarity of {1 1 1} edge facets, anchored to the three-phase boundary (TPB), which give rise to growth-twin nucleation in the shoulder region of a [0 0 1],…”
Get full text

Thick orientation-patterned GaAs grown by low-pressure HVPE on fusion-bonded templates by Lynch, C., Bliss, D.F., Snure, M., Tassev, V., Bryant, G., Yapp, C., Fenner, D.B., Allen, M.G., Termkoa, K., Li, J., Vangala, S., Goodhue, W.

“…Quasi-phase-matched GaAs layers up to 600μm thick have been produced by low-pressure hydride vapor phase epitaxy (HVPE) regrowth on templates fabricated using…”
Get full text

Growth of mm-thick orientation-patterned GaAs for IR and THZ generation by Lynch, C., Bliss, D.F., Zens, T., Lin, A., Harris, J.S., Kuo, P.S., Fejer, M.M.

“…Low-pressure hydride vapor phase epitaxy (HVPE) is being used for the regrowth of thick GaAs on orientation-patterned templates for nonlinear optical frequency…”
Get full text

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications by Bliss, D.F., Lynch, C., Weyburne, D., O’Hearn, K., Bailey, J.S.

“…A method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low-pressure hydride vapor phase epitaxy is described. For nonlinear…”
Get full text

Solute segregation during modified vertical gradient freezing of alloyed compound semiconductor crystals with magnetic and electric fields by Wang, X., Ma, N., Bliss, D.F., Iseler, G.W.

“…Single crystals of gallium–aluminum–antimonide are solidified from a solution of molten gallium–antimonide and aluminum–antimonide. Electromagnetic stirring…”
Get full text

Comparing modified vertical gradient freezing with rotating magnetic fields or with steady magnetic and electric fields by Wang, X., Ma, N., Bliss, D.F., Iseler, G.W., Becla, P.

“…This investigation treats the flow of molten gallium-antimonide and the dopant transport during the vertical gradient freezing process using submerged heater…”
Get full text

Vertical gradient freezing using submerged heater growth with rotation and with weak magnetic and electric fields by Holmes, A.M., Wang, X., Ma, N., Bliss, D.F., Iseler, G.W.

“…Investigations for the melt growth gallium-antimonide (GaSb) semiconductor crystals are underway at the US Air Force Research Laboratory at Hanscom Air Force…”
Get full text

Modeling of aluminum nitride growth by halide vapor transport epitaxy method by Cai, D., Zheng, L.L., Zhang, H., Tassev, V.L., Bliss, D.F.

“…A halide vapor transport epitaxy (HVTE) system was designed and built at USAF Research Laboratory to grow high-quality aluminum nitride film at growth rates up…”
Get full text

A numerical investigation of dopant segregation by modified vertical gradient freezing with moderate magnetic and weak electric fields by Wang, X., Ma, N., Bliss, D.F., Iseler, G.W.

“…The paper numerically investigates melt growth of doped gallium-antimonide (GaSb) semiconductor crystals by the vertical gradient freeze (VGF) method utilizing…”
Get full text

Modeling of high pressure, liquid-encapsulated Czochralski growth of InP crystals by Zhang, H., Prasad, V., Bliss, D.F.

“…A high resolution numerical scheme based on multizone adaptive grid generation and curvilinear finite volume discretization has been implemented to simulate…”
Get full text

Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors by Ma, N, Bliss, D.F, Bryant, G.G

“…The dopant transport during growth depends on both the diffusion and the convection of dopant during the entire period of time needed to grow a crystal. The…”
Get full text

GaAs Optical Parametric Oscillator with a Circularly Polarized Pump by Kuo, P.S., Vodopyanov, K.L., Fejer, M.M., Yu, X., Lin, A.C., Harris, J.S., Bliss, D.F., Lynch, C.L.

“…We demonstrated an optical parametric oscillator based on GaAs with a circularly polarized pump. The threshold was lower and conversion efficiency was higher…”
Get full text

Growth of InP and In/sub 1-x/Ga/sub x/P crystals by the vertical gradient freeze method with a submerged heater by Iseler, G.W., Bryant, G.G., Bliss, D.F.

“…We report the high-pressure growth of doped InP and In/sub 1-x/Ga/sub x/P crystals by the vertical gradient-freeze method modified with the addition of a…”
Get full text

Improved phosphorus injection synthesis for bulk InP by Higgins, W.M, Iseler, G.W, Bliss, D.F, Bryant, G, Tassev, V, Jafri, I, Ware, R.M, Carlson, D.J

“…High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liquid…”
Get full text

Macro-segregation, dynamics of interface and stresses in high pressure LEC grown crystals by Zou, Y.F., Wang, G.-X., Zhang, H., Prasad, V., Bliss, D.F.

“…High dislocation density and strong dopant inhomogeneities have been found in high pressure liquid-encapsulated Czochralski (HPLEC) grown crystals. The origin…”
Get full text