Search Results - "Blanton, T.N."
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Novel Glassy Nematic Liquid Crystals for Non-destructive Rewritable Optical Memory and Photonic Switching
Published in Advanced materials (Weinheim) (04-07-2003)“…Dithienylethene‐containing glassy nematic liquid crystals (see Figure) have been synthesized, in which the dithienylethene core’s electronic transition moment…”
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High-permeability fluorinated polyimide microcapsules by vapor deposition polymerization
Published in Polymer (Guilford) (01-02-2003)“…Spherical microcapsules (∼1 mm in diameter and ∼1 μm in wall thickness) to be used as inertial confinement fusion targets were prepared from 6FDA–ODA polyimide…”
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Microstructural evolution and epitaxial alignment of thin films of lithium niobate deposited onto sapphire by metallo-organic decomposition
Published in Thin solid films (01-08-1995)“…LiNbO 3 films were prepared by spin coating and thermal decomposition of a solution of metallo-organic precursors on single-crystal 〈0001〉 oriented Al 2O 3…”
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An ethidium ion selective electrode and its application to DNA-ethidium binding
Published in Biochemical and biophysical research communications (16-09-1981)Get more information
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5
Ultrafine nickel particles generated by laser-induced gas phase photonucleation
Published in Nanostructured materials (01-10-1997)“…A UV laser-assisted gas phase photonucleation process is used to generate nickel ultrafine particles(UFPs) from ambient temperature Ni(CO) 4 precursor. The…”
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Vitrified Chiral−Nematic Liquid Crystalline Films for Selective Reflection and Circular Polarization
Published in Chemistry of materials (01-06-1999)“…Nematic and left-handed chiral−nematic liquid crystals comprising methoxybiphenylbenzoate and (S)−(−)-1-phenylethylamine pendants to a cyclohexane core were…”
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Ultrahigh vacuum metalorganic chemical vapor deposition growth and in situ characterization of epitaxial TiO2 films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-09-1993)“…In a two‐chamber ultrahigh vacuum system, epitaxial TiO2 thin films have been deposited by metalorganic chemical vapor deposition on single crystal oxide…”
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An X-ray diffraction study of epitaxial lithium tantalate films deposited on (0001) sapphire wafers using r.f. diode sputtering
Published in Thin solid films (01-02-1995)“…Epitaxial thin films of lithium tantalate have been r.f. diode sputtered onto (0001) single-crystal sapphire substrates. X-ray diffraction results show that,…”
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Highly ordered Co/Pt superlattice thin films prepared using ultrathin seed layers
Published in IEEE transactions on magnetics (01-09-1997)“…We have prepared potentially low cost and high-performance magneto-optical (MO) disks based on cobalt/platinum (Co/Pt) superlattices and ultrathin seed layers…”
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Crystallization upon thermal annealing of a glass-forming liquid crystal in the nematic regime
Published in Applied physics letters (24-04-1995)“…As an example of a novel class of glass-forming liquid crystals, compound (I) was synthesized and characterized to possess a nematic mesophase between Tg and…”
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Growth kinetics, phase transitions, and cracking in cholesterol gallstones
Published in Journal of materials research (01-01-1995)“…The growth kinetics of cholesterol gallstones have been studied by growing crystals from melted gallstones. The resulting microstructures are spherulitic which…”
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High-temperature X-ray diffraction study of the peritectic reactions of Bi-2212 with and without Ag additions
Published in Physica. C, Superconductivity (01-08-1995)“…High-temperature X-ray diffraction (HTXRD) was used to determine the peritectic melting sequence of Bi 2Sr 2CaCu 2O 8 (Bi-2212) and Bi-2212 + 20 wt.% Ag thick…”
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Growth and characterization of gallium arsenide using single-source precursors: OMCVD and bulk pyrolysis studies
Published in Chemistry of materials (01-09-1990)Get full text
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Formation and characterization of ohmic contacts to n–AlGaAs using Pd/AuGe/Ag/Au
Published in Journal of materials research (01-05-1993)“…Sequential deposition of Pd/AuGe/Ag/Au and rapid thermal annealing at 450 to 550 °C were employed to form a shallow ohmic contact to n–Alx Ga1−x As. Contact…”
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