Search Results - "Blanquet, E"

Superconducting properties of NbTiN thin films deposited by high-temperature chemical vapor deposition by Hazra, D., Tsavdaris, N., Mukhtarova, A., Jacquemin, M., Blanchet, F., Albert, R., Jebari, S., Grimm, A., Konar, A., Blanquet, E., Mercier, F., Chapelier, C., Hofheinz, M.

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Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature by Consonni, V., Rey, G., Roussel, H., Doisneau, B., Blanquet, E., Bellet, D.

“…Polycrystalline fluorine-doped SnO2 thin films with a given thickness of about 250nm have been grown by ultrasonic spray pyrolysis with a growth temperature in…”
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Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition by Tian, L., Ponton, S., Benz, M., Crisci, A., Reboud, R., Giusti, G., Volpi, F., Rapenne, L., Vallée, C., Pons, M., Mantoux, A., Jiménez, C., Blanquet, E.

“…Plasma enhanced atomic layer deposition (PE-ALD) of aluminum nitride (AlN) thin films often utilizes NH3 or a mixture of N2 and H2 as a plasma source. However,…”
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Coupling powder bed additive manufacturing and vapor phase deposition methods for elaboration of coated 3D Ti-6Al-4V architectures with enhanced surface properties by Moll, A., Blandin, J.-J., Dendievel, R., Gicquel, E., Pons, M., Jimenez, C., Blanquet, E., Mercier, F.

“…We propose an innovative process coupling powder bed additive manufacturing by Electron Beam Melting (EBM) with Chemical Vapor Deposition (CVD) and Atomic…”
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Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire by Lay, S., Mercier, F., Boichot, R., Giusti, G., Pons, M., Blanquet, E.

“…The origin of threading dislocations (TDs) in nitride films is not completely understood but it is well established that they degrade the film properties. This…”
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Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition by Boichot, R, Tian, L, Richard, M.-I, Crisci, A, Chaker, A, Cantelli, V, Coindeau, S, Lay, S, Ouled, T, Guichet, C, Chu, M. H, Aubert, N, Ciatto, G, Blanquet, E, Thomas, O, Deschanvres, J.-L, Fong, D. D, Renevier, H

“…A complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer…”
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Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy by Claudel, A., Fellmann, V., Gélard, I., Coudurier, N., Sauvage, D., Balaji, M., Blanquet, E., Boichot, R., Beutier, G., Coindeau, S., Pierret, A., Attal-Trétout, B., Luca, S., Crisci, A., Baskar, K., Pons, M.

“…Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up…”
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Analysis of the iodine gas phase produced by interaction of CsI and MoO3 vapours in flowing steam by Gouello, M., Mutelle, H., Cousin, F., Sobanska, S., Blanquet, E.

“…•Reactions between MoO3 and CsI vapours in flowing steam produce gaseous iodine.•Fraction of gaseous iodine increases within a short range of the Mo/Cs molar…”
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Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy by Balaji, M., Claudel, A., Fellmann, V., Gélard, I., Blanquet, E., Boichot, R., Pierret, A., Attal-Trétout, B., Crisci, A., Coindeau, S., Roussel, H., Pique, D., Baskar, K., Pons, M.

“…► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial…”
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Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer by Boichot, R., Coudurier, N., Mercier, F., Lay, S., Crisci, A., Coindeau, S., Claudel, A., Blanquet, E., Pons, M.

“…AlN is epitaxially grown on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy (HT-HVPE) at constant growth rate and thickness, while varying the…”
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HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process by Pons, M., Su, J., Chubarov, M., Boichot, R., Mercier, F., Blanquet, E., Giusti, G., Pique, D.

“…The different steps of the fabrication of epitaxial AlN films (0.5–20µm) by high temperature chemical vapor deposition called also HVPE (Hydride Vapor Phase…”
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High temperature chemical vapor deposition of aluminum nitride, growth and evaluation by Pons, M., Boichot, R., Coudurier, N., Claudel, A., Blanquet, E., Lay, S., Mercier, F., Pique, D.

“…The application of AlN films in optoelectronics, sensors and high temperature coatings is strongly dependent on the nano-micro-structure of the film, impurity…”
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Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation by Boichot, R., Claudel, A., Baccar, N., Milet, A., Blanquet, E., Pons, M.

“…AlN growth by HTCVD (High Temperature Chemical Vapor Deposition) from AlCl 3 and NH 3 is currently a promising way to obtain thick, compact layers of aluminum…”
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Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD by Claudel, A., Blanquet, E., Chaussende, D., Audier, M., Pique, D., Pons, M.

“…To achieve AlN bulk growth, high temperature CVD process using chlorine chemistry was investigated. High growth rate and high crystalline quality are targeted…”
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Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices by Lintanf-Salaün, A., Mantoux, A., Djurado, E., Blanquet, E.

“…Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to…”
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Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications by Lintanf, A, Mantoux, A, Blanquet, E, Djurado, E

“…The deposition of tantalum oxide thin films on SiO x N y /Si substrates using electrostatic spray deposition was investigated. Different microstructures…”
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Experimental kinetic study of oxidation of uranium monocarbide powders under controlled oxygen partial pressures below 230°C by Berthinier, C., Rado, C., Dugne, O., Cabie, M., Chatillon, C., Boichot, R., Blanquet, E.

“…Uranium monocarbide (UC) powders are known to be easily oxidised by gas mixtures containing oxygen. In this study, the oxidation of UC micron powders was…”
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Thermodynamic and experimental study of UC powders ignition by Le Guyadec, F., Rado, C., Joffre, S., Coullomb, S., Chatillon, C., Blanquet, E.

“…Mixed plutonium and uranium carbide (UPuC) is considered as a possible fuel material for future nuclear reactors. However, UPuC is pyrophoric and fine powders…”
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Experimental thermodynamics for the evaluation of ALD growth processes by Violet, P., Blanquet, E., Monnier, D., Nuta, I., Chatillon, C.

“…The development of an ALD process, which is based on the sequential self-limiting surface reactions from generally two gaseous precursors, requires knowledge…”
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XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanism by Volpi, F., Cadix, L., Berthomé, G., Blanquet, E., Jourdan, N., Torres, J.

“…The introduction of SiOCH low- k dielectrics in the copper interconnections of sub-45 nm node technologies is a challenge in terms of both material and process…”
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