Search Results - "Blampey, Benjamin"

Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits by Prouvee, Jerome, Foucauld, Emeric de, Leduc, Yves, Jacquemod, G., Wei, Zhaopeng, Blampey, Benjamin

“…Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to…”
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A D-Band Multichannel TX System-in-Package Achieving 84.48 Gb/s With 64-QAM Based on 45-nm CMOS and Low-Cost PCB Technology by Hamani, Abdelaziz, Foglia Manzillo, Francesco, Siligaris, Alexandre, Cassiau, Nicolas, Blampey, Benjamin, Hameau, Frederic, Dehos, Cedric, Clemente, Antonio, Gonzalez-Jimenez, Jose Luis

“…A high-data-rate <inline-formula> <tex-math notation="LaTeX">D </tex-math></inline-formula>-band transmitter (TX) module cointegrating a dual-channel TX…”
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A D-band multi-channel Tx System-in-Package achieving 84.48 Gb/s with 64-QAM based on 45nm CMOS and low-Cost PCB technology by Hamani, Abdelaziz, Foglia Manzillo, Francesco, Siligaris, Alexandre, Cassiau, Nicolas, Blampey, Benjamin, Hameau, Frédéric, Dehos, Cedric, Clemente, Antonio, Gonzalez Jimenez, Jose-Luis

“…A high data-rate D-band transmitter module cointegrating a dual channel transmitter IC in 45 nm CMOS PDSOI technology and an antenna is presented. The proposed…”
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A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm by Hamani, Abdelaziz, Siligaris, Alexandre, Blampey, Benjamin, Dehos, Cedric, Gonzalez Jimenez, Jose Luis

“…In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of…”
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Comparative Study of Material Parameter Extraction Using Terahertz Time-Domain Spectroscopy in Transmission and in Reflection by Bernier, Maxime, Garet, Frédéric, Kato, Eiji, Blampey, Benjamin, Coutaz, Jean-Louis

“…As no terahertz signal is transmitted through opaque materials, reflection terahertz time-domain spectroscopy is obviously the dedicated setup. On the other…”
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An 84.48 Gb/s CMOS D-band Multi-Channel TX System-in-Package by Hamani, Abdelaziz, Foglia-Manzillo, Francesco, Siligaris, Alexandre, Cassiau, Nicolas, Blampey, Benjamin, Hameau, Frederic, Dehos, Cedric, Clemente, Antonio, Gonzalez-Jimenez, Jose Luis

“…This paper presents an in-package D-band wireless module co-integrating an innovative channel bonding transmitter IC in 45 nm CMOS PDSOI technology and a patch…”
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A 108-Gb/s 64-QAM CMOS D-Band Rx With Integrated LO Generation by Hamani, Abdelaziz, Siligaris, Alexandre, Dehos, Cedric, Cassiau, Nicolas, Blampey, Benjamin, Chaix, Fabrice, Gary, Marjorie, Gonzalez-Jimenez, Jose Luis

“…In this letter, an ultrabroadband D-band wireless front-end receiver (RX) in 45-nm CMOS SOI is proposed. It achieves a noise figure of 8 dB, a gain of 16 dB, a…”
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Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s by Ferrotti, Thomas, Blampey, Benjamin, Jany, Christophe, Duprez, Hélène, Chantre, Alain, Boeuf, Frédéric, Seassal, Christian, Ben Bakir, Badhise

“…In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg…”
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A 84.48-Gb/s 64-QAM CMOS D-Band Channel-Bonding Tx Front-End With Integrated Multi-LO Frequency Generation by Hamani, Abdelaziz, Siligaris, Alexandre, Barrera, Fernando, Dehos, Cedric, Cassiau, Nicolas, Blampey, Benjamin, Chaix, Fabrice, Gary, Marjorie, Gonzalez Jimenez, Jose Luis

“…In this letter, an ultra-broadband D-band wireless front-end transmitter (TX) in 45-nm CMOS SOI is proposed. Based on channel bonding and 64-QAM modulation, it…”
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Transmitter Made up of a Silicon Photonic IC and its Flip-Chipped CMOS IC Driver Targeting Implementation in FDMA-PON by Menezo, Sylvie, Temporiti, Enrico, Junsu Lee, Dubray, Olivier, Fournier, Maryse, Bernabe, Stephane, Baldi, Daniele, Blampey, Benjamin, Minoia, Gabriele, Repossi, Matteo, Myko, Andre, Messaoudene, Sonia, Carroll, Lee, Abrate, Silvio, Gaudino, Roberto, O'Brien, Peter, Charbonnier, Benoit

“…We report on the design, fabrication, and characterization of a reflective transmitter targeting implementation in passive optical networks (PON) with…”
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Low-cost, High-Gain Antenna Module Integrating a CMOS Frequency Multiplier Driver for Communications at D-band by Manzillo, Francesco Foglia, Luis Gonzalez-Jimenez, Jose, Clemente, Antonio, Siligaris, Alexandre, Blampey, Benjamin, Dehos, Cedric

“…This paper presents a compact D-band antenna module for ultrafast short-range communications. The system comprises a planar lens fed by an antenna-in-package…”
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A Near-Instantaneous and Non-Invasive Erasure Design Technique to Protect Sensitive Data Stored in Secure SRAMs by Noel, J.-P., Pezzin, M., Christmann, J.-F., Ciampolini, L., Le Coadou, M., Diallo, M., Lepin, F., Blampey, B., Bacles-Min, S., Wacquez, R., Giraud, B.

“…On-chip memories, and in particular SRAMs, are among the most critical components in terms of data security because they might contain sensitive data such as…”
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167-GHz and 155-GHz High Gain D-band Power Amplifiers in CMOS SOI 45-nm Technology by Hamani, Abdelaziz, Siligaris, Alexandre, Blampey, Benjamin, Jimenez, Jose Luis Gonzalez

“…In this paper, two D-band millimeter-wave wideband and high gain power amplifiers are proposed. Designed in CMOS SOI 45 nm technology, the two amplifiers…”
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A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology by Bossuet, Alice, Martineau, Baudouin, Dehos, Cedric, Blampey, Benjamin, Divay, Alexis, Morandini, Yvan

“…This paper describes a highly rugged power-amplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI)…”
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A 45RFSOI DC to 32 GHz Bandwidth Inductorless low power amplifier by Yaakoubi, G., Martineau, B., Gonzalez, Jl

“…In this work, an ultra-wideband inductorless amplifier implemented in a 45nm CMOS SOI technology is presented. The amplifier operates over a DC to 32 GHz…”
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CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design by Martineau, B., Bossuet, A., Divay, A., Blampey, B., Morandini, Y.

“…This paper studies the reliability that CMOS FD-SOI can achieved for mmWave Power Amplifier (PA) applications by means of characterizations combining RF aging…”
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A D-band 4-ways power splitter/combiner implemented on a 28nm bulk CMOS process by Barrera, Fernando, Siligaris, Alexandre, Blampey, Benjamin, Gonzalez-Jimenez, Jose Luis

“…This paper presents a 4-ways passive power splitter/combiner based on Wilkinson dividers implemented in the BEOL of a conventional 28nm bulk CMOS process…”
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A D-band 4-ways power splitter/combiner implemented on a 28nm bulk CMOS process by Barrera, Fernando, Siligaris, Alexandre, Blampey, Benjamin, Gonzalez-Jimenez, Jose Luis

“…This paper presents a 4-ways passive power splitter/combiner based on Wilkinson dividers implemented in the BEOL of a conventional 28nm bulk CMOS process…”
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Transmitarray Antenna with Integrated Frequency Multiplier for High-speed D-band Communications in Low-cost PCB Technology by Manzillo, Francesco Foglia, Clemente, Antonio, Blampey, Benjamin, Pares, Gabriel, Siligaris, Alexandre, Luis Gonzalez-Jimenez, Jose

“…This contribution presents the design and experimental validation of a high-gain D-band fixed beam transmitarray excited by a compact antenna-in-package. Both…”
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Fast and robust RF characterization method of insulators used in high speed interconnects networks by Lacrevaz, Thierry, Houzet, Gregory, Auchere, David, Artillan, Philippe, Bermond, Cedric, Blampey, Benjamin, Flechet, Bernard

“…A wide band (1 GHz-67 GHz) characterization method of insulator layers is presented. This method is well suitable for a fast, simple and accurate extraction of…”
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