Search Results - "Blaise, Philippe"
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Notulae to the Italian flora of algae, bryophytes, fungi and lichens: 18
Published in Italian botanist (13-11-2024)“…In this contribution, new data concerning algae, bryophytes, fungi and lichens of the Italian flora are presented. It includes new records, confirmations or…”
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Ab initio calculation of effective work functions for a TiN/HfO2/SiO2/Si transistor stack
Published in Applied physics letters (11-07-2011)“…Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS)…”
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3
La guerre des voies de communication au Cameroun, 1914-1916
Published in Guerres mondiales et conflits contemporains (01-03-2013)“…Le souci de s’imposer dans les colonies allemandes pendant la Première Guerre mondiale conduit Français et Anglais à exploiter au maximum les voies de…”
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HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Published in IEEE transactions on electron devices (01-01-2016)“…We investigate in detail the effects of metal electrodes on the switching performance and conductive filament (CF) stability of HfO 2 -based RRAM. The current-…”
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Exploring charge hopping transport in amorphous HfO$_2$: An approach combing $ab\ initio$ methods and model Hamiltonian
Published in Applied physics letters (2024)“…Charge hopping transport is typically modeled by Marcus theory with the coupling strengths and activation energies extracted from the constrained density…”
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Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian
Published in Applied physics letters (29-01-2024)“…Charge hopping transport is typically modeled by Marcus theory with the coupling strengths and activation energies extracted from the constrained density…”
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On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying
Published in IEEE transactions on electron devices (01-12-2015)“…We study in detail the impact of alloying HfO 2 with Al (Hf 1_x Al 2 xO 2+x ) on the oxide-based resistive random access memory (RRAM) (OxRRAM) thermal…”
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HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study
Published in IEEE transactions on electron devices (01-02-2018)“…We address the role of the Ti/HfO 2 interface on the conductive filament (CF) formation within the context of oxide-based resistive random access memories…”
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Reduction of Monoclinic HfO 2 : A Cascading Migration of Oxygen and Its Interplay with a High Electric Field
Published in Journal of physical chemistry. C (03-11-2016)Get full text
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Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field
Published in Journal of physical chemistry. C (03-11-2016)“…Using density functional theory, we investigated the formation of an extended Frenkel pair (EFP) in monoclinic m-HfO2 which we propose to be a prototype defect…”
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Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles
Published in Physical review letters (08-02-2013)“…Tetragonal semimetallic phases are predicted for Hf(2)O(3) and Zr(2)O(3) using density functional theory. The structures belong to space group P4[over ¯]m2 and…”
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Gasification of charcoal derived from tropical wood residues in an updraft fixed bed reactor
Published in Bioresource technology reports (01-02-2023)“…This paper aims to produce hydrogen-rich synthesis gas from the charcoal of three tropical tree species. The approach involves sequentially the production and…”
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13
HfO 2 /Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study
Published in IEEE transactions on electron devices (01-02-2018)“…We address the role of the Ti/HfO$_2$ interface on the conductive filament (CF) formation within the context of oxide-based resistive random access memories…”
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14
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory
Published in IEEE transactions on electron devices (01-05-2014)“…Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2 /Pt resistive random access memories are due to HfO x suboxides, possibly…”
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15
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization
Published in IEEE transactions on electron devices (01-11-2015)“…In this paper, we investigate in depth Forming, SET, and Retention of conductive-bridge random-access memory (CBRAM). A kinetic Monte Carlo model of the CBRAM…”
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A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
Published in IEEE transactions on electron devices (01-11-2017)“…In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window margin (WM), and retention. For…”
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Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions
Published in Advanced electronic materials (01-02-2019)“…Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide‐based conductive bridge random access memories (hybrid…”
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HfO sub(2)-Based RRAM: Electrode Effects, Ti/HfO sub(2) Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Published in IEEE transactions on electron devices (01-01-2016)“…We investigate in detail the effects of metal electrodes on the switching performance and conductive filament (CF) stability of HfO sub(2)-based RRAM. The…”
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Erratum: Prediction of Semimetallic Tetragonal Hf 2 O 3 and Zr 2 O 3 from First Principles [Phys. Rev. Lett. 110 , 065502 (2013)]
Published in Physical review letters (01-08-2015)Get full text
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Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23-09-2020)“…Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of…”
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