THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON

THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON

The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model utilizes Monte-Carlo generated point defect profile, generated dislocation profile for high doze hydrogen implantation. Excelle...

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Bibliographic Details
Published in:Compel Vol. 12; no. 4; pp. 407 - 416
Main Authors: Gadiyak, G.V., Blaghinin, D.E.
Format: Journal Article
Language:English
Published: MCB UP Ltd 01-04-1993
Online Access:Get full text
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Summary:The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model utilizes Monte-Carlo generated point defect profile, generated dislocation profile for high doze hydrogen implantation. Excellent simulation results has been achieved by using a single set of diffusion and kinetic parameters to model the radiation enhanced diffusion of boron for a wide range of hydrogen implanted doses.
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ISSN:0332-1649
2054-5606
DOI:10.1108/eb051814