Search Results - "Blackmore, Ewart W."

FLUKA Monte Carlo assessment of the terrestrial muon flux at low energies and comparison against experimental measurements by Infantino, Angelo, Blackmore, Ewart W., Brugger, Markus, Alía, Rubén García, Stukel, Matthew, Trinczek, Michael

“…In recent years, there has been an increasing interest in the assessment and modelling of Galactic Cosmic Rays (GCR) particularly regarding the evaluation of…”
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Muon-Induced Single Event Upsets in Deep-Submicron Technology by Sierawski, Brian D, Mendenhall, Marcus H, Reed, Robert A, Clemens, Michael A, Weller, Robert A, Schrimpf, Ronald D, Blackmore, Ewart W, Trinczek, Michael, Hitti, Bassam, Pellish, Jonathan A, Baumann, Robert C, Shi-Jie Wen, Wong, Rick, Tam, Nelson

“…Experimental data are presented that show low-energy muons are able to cause single event upsets in 65 nm, 45 nm, and 40 nm CMOS SRAMs. Energy deposition…”
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Terrestrial Muon Flux Measurement at Low Energies for Soft Error Studies by Blackmore, Ewart W., Stukel, Matthew, Trinczek, Michael, Slayman, Charles, Shi-Jie Wen, Wong, Richard

“…A large volume scintillator detector has been used to measure the terrestrial stopping muon rate under different conditions of location, altitude, shielding…”
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SEL Cross Section Energy Dependence Impact on the High Energy Accelerator Failure Rate by Alia, Ruben Garcia, Blackmore, Ewart W., Brugger, Markus, Danzeca, Salvatore, Ferlet-Cavrois, Veronique, Gaillard, Remi, Mekki, Julien, Poivey, Christian, Roed, Ketil, Saigne, Frederic, Spiezia, Giovanni, Trinczek, Michael, Uznanski, Slawosz, Wrobel, Frederic

“…We use a single event latchup (SEL) model calibrated to heavy ion (HI) and proton data below 230 MeV to extrapolate the proton cross section to larger energies…”
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GaAs Displacement Damage Dosimeter Based on Diode Dark Currents by Warner, Jeffrey H., Messenger, Scott R., Cress, Cory D., Walters, Robert J., Roche, Nicolas J.-H, Clark, Kenneth A., Bennett, Mitchell F., Blackmore, Ewart W., Trinczek, Michael

“…GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark…”
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The Effect of High-Z Materials on Proton-Induced Charge Collection by Clemens, M A, Hooten, N C, Ramachandran, V, Dodds, N A, Weller, R A, Mendenhall, M H, Reed, R A, Dodd, P E, Shaneyfelt, M R, Schwank, J R, Blackmore, E W

“…Charge collection measurements reveal that the presence of high-Z materials increases proton-induced charge collection cross sections for high charge…”
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Hardness Assurance Testing for Proton Direct Ionization Effects by Schwank, J. R., Shaneyfelt, M. R., Ferlet-Cavrois, V., Dodd, P. E., Blackmore, E. W., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Gouker, P. M., Tam, N., Wong, R., Shi-Jie Wen, Reed, R. A., Dalton, S. M., Swanson, S. E.

“…The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton…”
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Radiation Effects in 3D Integrated SOI SRAM Circuits by Gouker, P. M., Tyrrell, B., D'Onofrio, R., Wyatt, P., Soares, T., Weilin Hu, Chenson Chen, Schwank, J. R., Shaneyfelt, M. R., Blackmore, E. W., Delikat, K., Nelson, M., McMarr, P., Hughes, H., Ahlbin, J. R., Weeden-Wright, S., Schrimpf, R.

“…Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT…”
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Electromagnetic Modeling of the AGS A10 Injection Kicker Magnet by Armenta, R.B., Barnes, M.J., Blackmore, E.W., Hadary, O., Norn, D.T., Wait, G.D.

“…The present Alternating Gradient Synchrotron (AGS) injection kicker magnets at the A5 location were designed for 1.5 GeV proton injection. Recent high…”
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Intensity Upgrade to the TRIUMF 500 MeV Large-Area Neutron Beam by Blackmore, Ewart W., Trinczek, Michael

“…The TRIUMF BL1B neutron and proton facility has been upgraded with improved shielding of the neutron-production converter to provide higher neutron…”
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Development of a Large Area Neutron Beam for System Testing at TRIUMF by Blackmore, E.W.

“…A neutron flood beam has been developed for large scale electronic system testing. Low intensity protons are stopped in a lead absorber and the…”
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[Formula Omitted]Outstanding Conference Paper Award 2014 IEEE [Formula Omitted]Nuclear and Space Radiation Effects Conference by Dodds, Nathaniel Anson, Schwank, James R., Shaneyfelt, Marty R., Dodd, Paul E., Doyle, Barney Lee, Trinczek, Michael, Blackmore, Ewart W., Rodbell, Kenneth P., Reed, Robert A., Pellish, Jonathan A., LaBel, Kenneth A., Marshall, Paul W., Swanson, Scot E., Vizkelethy, Gyorgy, Van Deusen, Stuart B., Sexton, Frederick W., Martinez, Marino John

“…The recipients of the 2014 NSREC Outstanding Conference Paper Award are Nathaniel A. Dodds, James R. Schwank, Marty R. Shaneyfelt, Paul E. Dodd, Barney L…”
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Outstanding Conference Paper Award: 2015 IEEE Nuclear and Space Radiation Effects Conference by Dodds, Nathaniel Anson, Martinez, Marino, Dodd, Paul E., Shaneyfelt, Marty R., Sexton, Frederick W., Black, Jeffrey D., Lee, David S., Swanson, Scot E., Bhuva, Bharat L., Warren, Kevin M., Reed, Robert A., Trippe, James, Sierawski, Brian D., Weller, Robert A., Mahatme, Nihaar, Gaspard, Nelson J., Assis, Thiago R., Austin, Rebekah, Weeden-Wright, Stephanie L., Massengill, Lloyd W., Swift, Gary, Wirthlin, Michael, Cannon, Matthew, Liu, Rui, Chen, Li, Kelly, Andrew T., Marshall, Paul W., Trinczek, Michael, Blackmore, Ewart W., Wen, Shi -Jie, Wong, Richard, Narasimham, Balaji, Pellish, Jonathan A., Puchner, Helmut

“…Presents the recipients of the Outstanding Conference Paper Award from the 2015 IEEE Nuclear and Space Radiation Effects Conference…”
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LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics by Hiemstra, D.M., Blackmore, E.W.

“…The effective linear energy transfer of heavy nuclear recoils (Z/spl ges/3) produced by proton interactions in silicon are calculated for incident proton…”
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Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing by Shaneyfelt, M.R., Felix, J.A., Dodd, P.E., Schwank, J.R., Dalton, S.M., Baggio, J., Ferlet-Cavrois, V., Paillet, P., Blackmore, E.W.

“…It is shown that protons and neutrons can induce enhanced degradation in power MOSFETs, including both trench and planar geometry devices. Specifically, large…”
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Test Procedures for Proton-Induced Single Event Latchup in Space Environments by Felix, J.A., Schwank, J.R., Shaneyfelt, M.R., Baggio, J., Paillet, P., Ferlet-Cavrois, V., Dodd, P.E., Girard, S., Blackmore, E.W.

“…The effect of high energy proton irradiation and angle of incidence on single-event latchup (SEL) hardness is investigated as a function of temperature and…”
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Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam by Dodds, Nathaniel Anson, Schwank, James Ralph, Shaneyfelt, Marty R, Dodd, Paul Emerson, Doyle, Barney Lee, Trinczek, M. C., Blackmore, Ewart W., Rodbell, Kenneth P., Reed, R. A., Pellish, Jonathan A., LaBel, Kenneth A., Marshall, P. W., Swanson, Scot E., Vizkelethy, Gyorgy, Van Deusen, Stuart B.

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High gradient magnetic separation of cells on the basis of expression levels of cell surface antigens by Thomas, T E, Abraham, S J, Otter, A J, Blackmore, E W, Lansdorp, P M

“…The possibility of separating cells on the basis of levels of antigen expression was explored in a model system using fixed erythrocytes and high gradient…”
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Hardness assurance testing for proton direct ionization effects by Schwank, J. R., Shaneyfelt, M. R., Ferlet-Cavrois, V., Dodd, P. E., Blackmore, E. W., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Gouker, P. M., Tam, N., Wong, R., Wen, S., Reed, R. A., Dalton, S. M., Swanson, S. E.

“…The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton…”
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Failures of MOSFETs in terrestrial power electronics due to single event burnout by Davidson, C.D., Blackmore, E.W., Hess, J.I.

“…Failures of semiconductor devices caused by cosmic radiation exposure is well known in space and avionics applications. However it is not well known that…”
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