Search Results - "Biswas, Dhrubes"

Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles by Bag, Ankush, Majumdar, Shubhankar, Das, Subhashis, Biswas, Dhrubes

“…Immiscibility of InGaN hinders epitaxial growth of high-quality AlGaN/InGaN heterojunction, which could have superior performances than AlGaN/GaN in view of…”
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Health care social media: expectations of users in a developing country by Amrita, Biswas, Dhrubes

“…Affordability, acceptability, accommodation, availability, and accessibility are the five most important dimensions of access to health services. Seventy two…”
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Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis by Dinara, Syed Mukulika, Jana, Sanjay Kr, Ghosh, Saptarsi, Mukhopadhyay, Partha, Kumar, Rahul, Chakraborty, Apurba, Bhattacharya, Sekhar, Biswas, Dhrubes

“…Enhancement of two dimensional electron gas (2DEG) concentrations at Al0.3Ga0.7N/GaN hetero interface after a-Si3N4 (SiN) passivation has been investigated…”
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Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001) by Kumar, Rahul, Bag, Ankush, Mukhopadhyay, Partha, Das, Subhashis, Biswas, Dhrubes

“…There exist discrepancies between reports on cross-hatch (CH) behaviour and its interaction with interfacial misfit dislocations in the literature. In this…”
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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors by Ghosh, Saptarsi, Dinara, Syed Mukulika, Mukhopadhyay, Partha, Jana, Sanjay K., Bag, Ankush, Chakraborty, Apurba, Chang, Edward Yi, kabi, Sanjib, Biswas, Dhrubes

“…Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the…”
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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer by Mahata, Mihir Kumar, Ghosh, Saptarsi, Jana, Sanjay Kumar, Chakraborty, Apurba, Bag, Ankush, Mukhopadhyay, Partha, Kumar, Rahul, Biswas, Dhrubes

“…In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al2O3) were…”
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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE by Mukhopadhyay, Partha, Bag, Ankush, Gomes, Umesh, Banerjee, Utsav, Ghosh, Saptarsi, Kabi, Sanjib, Chang, Edward Y. I., Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

“…A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been…”
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Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications by Gomes, Umesh P., Chen, Yiqiao, Kabi, Sanjib, Chow, Peter, Biswas, Dhrubes

“…The performance of InAlAs/InGaAs quantum well field effect transistors are subject to high impact ionization and band-to-band tunneling (BTBT) due to its…”
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An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers by Das, Palash, Jana, Sanjay Kumar, Halder, Nripendra N., Mallik, S., Mahato, S. S., Panda, A. K., Chow, Peter P., Biswas, Dhrubes

“…In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results…”
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Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon by Chowdhury, Subhra, Biswas, Dhrubes

“…Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al0.2Ga0.8N/GaN heterostructures on Si(111) substrate with three buffer thickness (600…”
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Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation by Liu, Shih-Chien, Trinh, Hai-Dang, Dai, Gu-Ming, Huang, Chung-Kai, Dee, Chang-Fu, Majlis, Burhanuddin Yeop, Biswas, Dhrubes, Chang, Edward Yi

“…An effective surface cleaning technique is demonstrated for the GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) passivation…”
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Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening by Bag, Ankush, Kumar, Rahul, Mukhopadhyay, Partha, Mahata, Mihir K., Chakraborty, Apurba, Ghosh, Saptarsi, Jana, Sanjay K., Biswas, Dhrubes

“…In-situ RHEED and ex-situ AFM characterizations have been employed to investigate transformations of surface topography with the thickness of PAMBE grown AlGaN…”
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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure by Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes

“…The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to…”
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Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility by Das, Palash, Halder, Nripendra N., Kumar, Rahul, Jana, Sanjay Kr, Kabi, Sanjib, Borisov, Boris, Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

“…This paper presents an approach of compositional grading of the barrier in AlGaN/GaN quantum well heterostructure to achieve high two dimensional electron gas…”
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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure by Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes

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Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis by Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Das, Subhashis, Bag, Ankush, Biswas, Dhrubes

“…The effect of trap energy states in AlGaN/InGaN/GaN heterostructure is investigated by temperature dependent threshold voltage measurement from 298 K to 373 K…”
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Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination by Kumar, Rahul, Biswas, Dhrubes

“…Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy…”
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Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy by Das, Subhashis, Ghosh, Saptarsi, Kumar, Rahul, Bag, Ankush, Biswas, Dhrubes

“…Highly sensitive acetone sensing performance of Pd/AlGaN/GaN resistive devices in the temperature range of 100 °C-250 °C and in the detection range of 100-1000…”
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Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities by Kumar, Rahul, Bag, Ankush, Mukhopadhyay, Partha, Das, Subhashis, Biswas, Dhrubes

“…•InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs.•Continuously graded MB exhibits smoother surface morphology.•Grading scheme has…”
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Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate by Majumdar, Shubhankar, Bag, Ankush, Biswas, Dhrubes

“…We report a comparative study of artificial neural network (ANN) model and small signal model (SSM) based on extracted parameters. ANN model training is done…”
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