Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to product-level HTOL results, we show that BTI on (110) Fin can be improved significantly with optimized process. In addition, BTI variability with...

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Bibliographic Details
Published in:	2015 IEEE International Reliability Physics Symposium pp. 2F.3.1 - 2F.3.5
Main Authors:	Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-04-2015
Subjects:	14nm FinFET BTI FinFETs HTOL Logic gates Random access memory Reliability Stress
Online Access:	Get full text
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Summary:	In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to product-level HTOL results, we show that BTI on (110) Fin can be improved significantly with optimized process. In addition, BTI variability with small Fins does not pose any fundamental risk and we'll show 1000hrs of HTOL data on 128Mb SRAM. Fin Self-heating effect (SHE) was characterized for both logic and I/O devices and verified through simulations and thermal imaging for product design and verifications. Overall, robust 14nm FinFET reliability has been demonstrated on the product level through full process optimizations and stress validations.
ISSN:	1541-7026 1938-1891
DOI:	10.1109/IRPS.2015.7112693