Search Results - "Bisi, Davide"

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements by Bisi, Davide, Meneghini, Matteo, de Santi, Carlo, Chini, Alessandro, Dammann, Michael, Bruckner, Peter, Mikulla, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based…”
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Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio, Nanni, Antonio, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper presents an extensive investigation of the properties of the trap with activation energy equal to 0.6 eV, which has been demonstrated to be…”
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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs by Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS- high electron…”
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Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures by Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico

“…This paper reports on the hot-carrier effects and semi-on-state behavior of nitrogen-polar GaN MIS-HEMTs at cryogenic temperatures (from 300 K down to 100 K)…”
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Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs by Bisi, Davide, De Santi, Carlo, Meneghini, Matteo, Wienecke, Steven, Guidry, Matt, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K., Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF)…”
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Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch by Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

“…This letter reports on the dynamic <inline-formula> <tex-math notation="LaTeX">R_{\text{ON}} </tex-math></inline-formula> performance of large-area GaN…”
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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate by Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…In this work we report on the three dominant trapping mechanisms affecting the dynamic performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on…”
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Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices by Chan, Silvia H., Tahhan, Maher, Liu, Xiang, Bisi, Davide, Gupta, Chirag, Koksaldi, Onur, Li, Haoran, Mates, Tom, DenBaars, Steven P., Keller, Stacia, Mishra, Umesh K.

“…In this paper, we report on the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using…”
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Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs by Meneghesso, Gaudenzio, Bisi, Davide, Rossetto, Isabella, Ruzzarin, Maria, Meneghini, Matteo, Zanoni, Enrico

“…This paper reviews the most relevant threshold-voltage instabilities and dielectric breakdown mechanisms in GaN-based transistors with…”
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Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices by Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.

“…This work reports on the electrical characterization of Al 2 O 3 /GaN MOS capacitors grown by means of metal-organic chemical vapor deposition. Novel results…”
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Temperature-Dependent Dynamic R}}} in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage by Meneghini, Matteo, Vanmeerbeek, Piet, Silvestri, Riccardo, Dalcanale, Stefano, Banerjee, Abhishek, Bisi, Davide, Zanoni, Enrico, Meneghesso, Gaudenzio, Moens, Peter

“…This paper reports an investigation of the trapping mechanisms responsible for the temperature-dependent dynamic-R ON of GaN-based…”
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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility…”
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Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures by Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico

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Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch by Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

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Short-Circuit Capability with GaN HEMTs : Invited by Bisi, Davide, Cruse, Bill, Zuk, Philip, Parikh, Primit, Mishra, Umesh, Hosoda, Tsutomu, Kamiyama, Masamichi, Kanamura, Masahito

“…Short-circuit capability with GaN HEMTs is demonstrated thanks to an integrated Short-Circuit Current Limiter (SCCL) and a commercial gate-driver with DESAT…”
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Short-Circuit Capability Demonstrated for GaN Power Switches by Bisi, Davide, Gritters, John, Hosoda, Tsutomu, Kamiyama, Masamichi, Cruse, Bill, Huang, YuLu, McKay, Jim, Gupta, Geetak, Lal, Rakesh, Neufeld, Carl, Zuk, Philip, Wu, YiFeng, Parikh, Primit, Mishra, Umesh

“…Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report…”
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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design by Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

“…Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including…”
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Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects by Saro, Marco, de Pieri, Francesco, Carlotto, Andrea, Fornasier, Mirko, Rampazzo, Fabiana, De Santi, Carlo, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Bisi, Davide, Guidry, Matthew, Keller, Stacia, Mishra, Umesh

“…A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried out by means of Drain Current Transient Spectroscopy (DCTS). The…”
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Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate by Meneghesso, Gaudenzio, Meneghini, Matteo, Bisi, Davide, Rossetto, Isabella, Wu, Tian-Li, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Decoutere, Stefaan, Zanoni, Enrico

“…This paper reports an extensive analysis of the trapping and reliability issues in AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility…”
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Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver by Bisi, Davide, Nguyen, Long, Zuk, Philip, Gokhale, Ashish, Coffey, Keith, Liu, Ted, Cruse, Bill, Hosoda, Tsutomu, Kamiyama, Masamichi, Parikh, Primit, Mishra, Umesh

“…A successful short-circuit protection technology for GaN power devices paired with a commercial gate driver is demonstrated. The GaN power devices have an…”
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