Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

Metalorganic vapor phase epitaxial (MOVPE) growth of GaN on nanopatterned AGOG sapphire substrates was performed, and characteristics of the light-emitting diode (LED) devices grown on patterned sapphire and planar substrates were compared. The nanopatterned sapphire substrates were fabricated by a...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics Vol. 15; no. 4; pp. 1066 - 1072
Main Authors: Yik-Khoon Ee, Biser, J.M., Cao, W., Chan, H.M., Vinci, R.P., Tansu, N.
Format: Journal Article
Language:English
Published: New York IEEE 01-07-2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Aluminum
Annealing
Crystallization
Dislocation density
Emissions
Epitaxial growth
Epitaxial layers
Epitaxy
Gallium nitride
Gallium nitrides
Indium gallium nitrides
InGaN quantum wells
Light emitting diodes
MOVPE growth
Nanocomposites
nanoheteroepitaxy
Nanomaterials
Nanopatterning
Nanostructure
Power generation
Sapphire
Substrates
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Summary:Metalorganic vapor phase epitaxial (MOVPE) growth of GaN on nanopatterned AGOG sapphire substrates was performed, and characteristics of the light-emitting diode (LED) devices grown on patterned sapphire and planar substrates were compared. The nanopatterned sapphire substrates were fabricated by a novel process (AGOG) whereby aluminum nanomesas were epitaxially converted into crystalline Al 2 O 3 via a two-stage annealing process. The GaN template grown on the nanopatterned sapphire substrate was done via an abbreviated growth mode, where a 15-nm thick, low-temperature GaN buffer layer was used, without the use of an etch-back and recovery process during the epitaxy. InGaN quantum wells (QWs) LEDs were grown on the GaN template on the nanopatterned sapphire, employing the abbreviated growth mode. The optimized InGaN QW LEDs grown on the patterned AGOG sapphire substrate exhibited a 24% improvement in output power as compared to LEDs on GaN templates grown using the conventional method. The increase in output power of the LEDs is attributed to improved internal quantum efficiency of the LEDs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2017208